YL 1500
Abstract: YL1500 Q51-X1500 SMC M Connector siemens tube
Text: Transmitter Tetrode YL 1500 Ordering code Q51-X1500 Coaxial metal-ceramic tetrode, forced-air-cooled, for frequencies up to 110 MHz, particularly suitable for anode-modulated broadcast transmitters up to 20 kW.
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C-Archiv-DB/GG-RO-engl/DB-Senderoehren-96
BNR-B442-P4213-X-X-7600/YL1500
Q51-X1500
YL 1500
YL1500
Q51-X1500
SMC M Connector
siemens tube
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Untitled
Abstract: No abstract text available
Text: Power Management ICs for Automotive Body Control LED Drivers for Automotive Light No.11039ECT14 BD8381EFV-M ●Description BD8381EFV-M is a white LED driver with the capability of withstanding high input voltage 50V MAX . A current-mode buck-boost DC/DC controller is also integrated to achieve stable operation against voltage input and also to
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11039ECT14
BD8381EFV-M
BD8381EFV-M
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Untitled
Abstract: No abstract text available
Text: RT9600 Preliminary Synchronous-Rectified Buck MOSFET Drivers General Description The RT9600 is a high frequency, dual MOSFET driver specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. This driver combined with the RT9237/RT9241
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RT9600
RT9600
RT9237/RT9241
DS9600-01
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Untitled
Abstract: No abstract text available
Text: RT9600 Preliminary Synchronous-Rectified Buck MOSFET Drivers General Description The RT9600 is a high frequency, dual MOSFET driver specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. This driver combined with the RT9237/RT9241
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RT9600
RT9600
RT9237/RT9241
DS9600-03
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x6750
Abstract: TMS 3450 D382 Y379 X1400 X4050 TMS 3450 specifications x1300 x1650 HD66324T
Text: HD66324T TFT Driver 64-level Grayscale Driver for the High-Quality TFT Liquid Crystal Display for XGA/SXGA Systems Rev.0.0 September 1997 Description The HD66324T is a TFT-LCD source driver LSI suitable for XGA and SXGA systems. It receives 6-bitper-pixel digital display data, and generates and outputs voltages for 64 grayscales. The output circuit
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HD66324T
64-level
HD66324T
x6750
TMS 3450
D382
Y379
X1400
X4050
TMS 3450 specifications
x1300
x1650
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Untitled
Abstract: No abstract text available
Text: LTC1530 High Power Synchronous Switching Regulator Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1530 is a high power synchronous switching regulator controller optimized for 5V to 1.3V-3.5V output applications. Its synchronous switching architecture drives
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LTC1530
LTC1530
LTC3778
LTC3832
1530fa
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GCM32ER71E106KA42
Abstract: No abstract text available
Text: Power Management ICs for Automotive Body Control LED Drivers for Automotive Light No.11039ECT14 BD8381EFV-M ●Description BD8381EFV-M is a white LED driver with the capability of withstanding high input voltage 50V MAX . A current-mode buck-boost DC/DC controller is also integrated to achieve stable operation against voltage input and also to
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11039ECT14
BD8381EFV-M
BD8381EFV-M
GCM32ER71E106KA42
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Untitled
Abstract: No abstract text available
Text: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)
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IRFBE20,
SiHFBE20
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)
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SiHP8N50D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive
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IRL510,
SiHL510
2002/95/EC
O-220AB
O-220Aelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiHP33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reduced switching and conduction losses
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SiHP33N60E
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.243 66 Qgs (nC) 8 Qgd (nC) 14
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SiHP15N50E
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIHP33N60EF-GE3
Abstract: No abstract text available
Text: SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHP33N60EF
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SIHP33N60EF-GE3
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Untitled
Abstract: No abstract text available
Text: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements
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IRF720,
SiHF720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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IRFBC30A,
SiHFBC30A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF840A,
SiHF840A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration
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SiHP6N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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IRF840,
SiHF840
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the
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IRFBC30,
SiHFBC30
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SiHP20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.184 92 Qgs (nC) 10 Qgd (nC) 19
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SiHP20N50E
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC) 37
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SiHP28N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRF9Z34,
SiHF9Z34
O-220AB
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: HD66324T TFT Driver 64-level Grayscale Driver for the High-Quality TFT Liquid Crystal Display for XGA/SXGA Systems HITACHI Rev.0.0 September 1997 Description The HD66324T is a TFT-LCD source driver LSI suitable for XGA and SXGA systems. It receives 6-bitper-pixel digital display data, and generates and outputs voltages for 64 grayscales. The output circuit
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HD66324T
64-level
HD66324T
HD66324
O--------10
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nec DI 308
Abstract: v541
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT jj , PD16638A 300/309-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16638A is a source driver for TFT-LCDs capable of supporting displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 3 dots (1 pixel), which can realize a full-color display of260,000
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uPD16638A
300/309-OUTPUT
64-GRAY
PD16638A
of260
PD16638AN-xxx
IZAC1003
nec DI 308
v541
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