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    WT TRANSISTOR Search Results

    WT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    WT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    2n3773 power Amplifier circuit diagrams

    Abstract: AD534 vacuum tube applications data book 759N Non-Linear Circuits Handbook Analog Devices 2N3773 audio amplifier diagram
    Text: wt sin <P\ "-o" \J \J ~ sin wt Yo . wt cos q, + cos \s•~' •n wt cos wt . q,\ Sl~' . 2wt cos q, +" _\I_,_,J3.- \SI~' \J . t sin <P\ t coS q, + Sll' 2ul \j \J~ \\.'_cOS 2 W £o" :-.g) \J \J~ \11'11'\-IP.S£\ cos <P " Of 1'\-lp.S£\ "-o " 20 \J \J~ l's0° ol.ll


    Original     		PDF rs10/Lt 2n3773 power Amplifier circuit diagrams AD534 vacuum tube applications data book 759N Non-Linear Circuits Handbook Analog Devices 2N3773 audio amplifier diagram

    WT12-2P430

    Abstract: sick wt12-2p430 B560 transistor datasheet Wl 12-2p430 Z430 sick WL 12-2B560 B560 datasheet sick WL 2N150 2N450
    Text: D A T E N B L A T T Lichtschranken Baureihe W12-2 WS 12/WE 12-2 20 m WL 12-2 0 . 7 m WT 12-2 35 . 150 mm x v 20 . 250 mm 80 . 600 mm Lichtschranken in stabilem Metallgehäuse. Reflexions-Lichttaster WT 12-2 mit stufenlos einstellbarem Tastabstand und wahlweise definierter


    Original     		PDF W12-2 12/WE D-79177 CH-6370 WT12-2P430 sick wt12-2p430 B560 transistor datasheet Wl 12-2p430 Z430 sick WL 12-2B560 B560 datasheet sick WL 2N150 2N450

    sick wt12-2p430

    Abstract: WT12-2P430 sick wl 33 sick sensor WT12-2P430 TRANSISTOR B560 SICK distance sensor B560 transistor datasheet sick WL sick WL 12-2B560 Wl 12-2p430
    Text: D A T A S H E E T Photoelectric Switches W12-2 Series WS/WE 12-2 20 m WL 12-2 0 . 7 m WT 12-2 35 . 150 mm x v 20 . 250 mm 80 . 600 mm Photoelectric switches in stable metal housing. Photoelectric proximity switches WT 12-2 with stepless adjustable scanning distance and optional


    Original     		PDF W12-2 110th sick wt12-2p430 WT12-2P430 sick wl 33 sick sensor WT12-2P430 TRANSISTOR B560 SICK distance sensor B560 transistor datasheet sick WL sick WL 12-2B560 Wl 12-2p430

    sick wt 5 P-112

    Abstract: wt 5 P-112 SICK WT 24 sick wt 9 P-112 sick kt 5 g SICK wt SICK sick optic MM675 112-P
    Text: P R O D U KT I N F O R M AT I O N Reflexions-Lichttaster WT 14 energetisch WT 14 – P 112 1 4 32,5 17 12 Tastweite einstellbar 30,3 4 44 2,17 2 4 33,34 50,5 75 1500 mm 67 5 4 ø ø ø ø ø ø 3a 4 22 4 30 – P 410 14,35 3b 4 16,5 1 4 2 4 3a 4 3b 4 6 4 4 Mitte Optikachse


    Original     		PDF CH-6370 sick wt 5 P-112 wt 5 P-112 SICK WT 24 sick wt 9 P-112 sick kt 5 g SICK wt SICK sick optic MM675 112-P

    2SA1020GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)


    Original     		PDF 2SA1020GP OT-23 OT-23) 100mS* 2SA1020GP

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1020PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * HFE O :UT * HFE(Y):WT .019 (0.50) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85)


    Original     		PDF 2SA1020PT OT-23 OT-23) 100mS*

    Untitled

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT3030-WT-A 3.0mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


    Original     		PDF MT3030-WT-A

    Untitled

    Abstract: No abstract text available
    Text: , Una. J C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY57 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=125V(Min.) • Low Collector Saturation Voltage:V CE (wt)=1.3V@lc=10A


    Original     		PDF BUY57

    incremental encoders siemens

    Abstract: rotary encoder schematic absolute encoder siemens iC-WT RLR RESISTORS G003 G008 incremental rotary encoder LED current Limiting Calculation rotary optical encoder schematic
    Text: iC-WT INCREMENTAL ENCODER FEATURES APPLICATIONS ♦ Differential scanning for track A and B ♦ Constant-light-evaluated scanning for the index track Z with adjustable relative threshold ♦ Photocurrent amplifier with high cut-off frequency ♦ Current comparators with hysteresis


    Original     		PDF incr9-6135-9292-0 incremental encoders siemens rotary encoder schematic absolute encoder siemens iC-WT RLR RESISTORS G003 G008 incremental rotary encoder LED current Limiting Calculation rotary optical encoder schematic

    sick wl 33

    Abstract: SICK WL 250 sick WS 250 - D430 sick WS250 D430 sick WL 10 sick WL SICK WS 150 D132 sick WL 36 SICK WS 150 SICK wt
    Text: D AT E N B L ATT Lichtschranke Baureihe W 250 WS/WE 250 20 m WL 250 8m WT 250 100 . 300 mm 150 . 500 mm x v w Komplette Lichtschrankenfamilie in robustem, glasfaserverstärktem Kunststoffgehäuse. Sie bietet interessante Reichweiten bei kompakter Baugröße.


    Original     		PDF 12-4pol. Eins202-0 CH-6370 sick wl 33 SICK WL 250 sick WS 250 - D430 sick WS250 D430 sick WL 10 sick WL SICK WS 150 D132 sick WL 36 SICK WS 150 SICK wt

    d331 npn transistor

    Abstract: D331 PNP D331 transistor SICK WS 150 D132 transistor D331 datasheet D330 NPN transistor SICK WT 4-2 transistor d331 sick WL sick WL 10
    Text: D A T E N B L A T T Lichtschranken Baureihe W 4-2 WS/WE 4-2 4m WL 4-2 2,8 m WT 4-2 4 . 130 mm Komplette Lichtschrankenbaureihe in glasfaserverstärktem Kunststoffgehäuse. Einweglichtschranke mit 4 m Reichweite und sichtbarem Rotlicht als Ausrichthilfe.


    Original     		PDF D-40549 CH-6370 d331 npn transistor D331 PNP D331 transistor SICK WS 150 D132 transistor D331 datasheet D330 NPN transistor SICK WT 4-2 transistor d331 sick WL sick WL 10

    bc445

    Abstract: No abstract text available
    Text: WtàCSiÛ. BC445 BC446 SILICON EPITAXIAL TRANSISTOR DESCRIPTION TOW :n BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BC445 BC446 BC445 300mA 625mW 100mA

    EVK71-050

    Abstract: SRFE T151 F25 transistor
    Text: EVK71-050 75a POWER TRANSISTOR MODULE : Features • 7 V —ft 4 V • y < KrtSK Including Free Wheeling Diode High DC Current Gain • ÎÊ # t Wt Insulated Type •fflüÊ : Applications • Power Switching •A C t - ^ J » • DC ^ AC Motor Controls —9 W &


    OCR Scan     		PDF EVK71-050 E82988 EHTS30S3% l95t/R89 SRFE T151 F25 transistor

    Untitled

    Abstract: No abstract text available
    Text: 19- 1121; Rev 0. 9/96 JV W V A A JV X Cost-Saving M ultichem istry Battery-Charger System EVALUAT\° N WT m General Description Features ♦ Multichemistry Charger System Li-Ion, NiMH, NiCd ♦ Independent Voltage and Current Loops


    OCR Scan     		PDF MAX846A

    BUW12AF

    Abstract: BUW12F BUW12A
    Text: N AMER PHILIPS/DISCRETE bTE ]> Wt bbSBTBl 002053^ b n BUW12F BUW12AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er tran sisto r in a SO T199 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems, etc.


    OCR Scan     		PDF bbS3131 BUW12F BUW12AF OT199 BUW12F BUW12AF BUW12A

    incremental encoders siemens

    Abstract: Siemens room temperature sensor 24v inkrementalencoder ic
    Text: iC-WT if f if ll INCREMENTAL ENCODER FEATURES APPLICATIONS ♦ Differential scanning for track A and B ♦ Constant-light-evaluated scanning for the index track Z with adjustable relative threshold ♦ Photocurrent amplifier with high cut-off frequency ♦ Current comparators with hysteresis


    OCR Scan     		PDF

    BUV62

    Abstract: bux c
    Text: THOMSON MIL ET SPATIAUX 5SE ]> Wt TDSbôTE □ DOGM'ìD ÔTT • THCM 'T '- j y ~ } f DISCRETE COMPONENTS o o DESCRIPTION PRODUCT PACKAGE .£ o “O l-o 80 <! ö BIPOLAR POWER TRANSISTORS BUT 90 VCEO sus = 125 V 1C = 50 A ■ BUT 91 VC EO (sus) = 200 V 1C = 50 A


    OCR Scan     		PDF T03modified* BUT92A BUT100 BUT102 BUV18 BUV19 BUV26 BUV28 BUV39 BUV40 BUV62 bux c

    HIP4010IB

    Abstract: motor driver full bridge 5A HIP4010 CD74HCT4000
    Text: 430E271 00S5422 7 4 T BBHAS HIP4010 HA RRIS S EMI CONDUCT OR ADVANCE INFORMATION April 1994 f f f f f WT \ß f Power Full Bridge Driver for Low Voltage Motor Drive with Direction and Brake Control Description Features Two Independent Complementary MOS Output


    OCR Scan     		PDF 430E271 00S5422 HIP4010 CD74HCT4000 HIP4010IB motor driver full bridge 5A HIP4010

    g401 smd

    Abstract: incremental encoders siemens Siemens encoder cable G701
    Text: iC-WT •Haus INCREMENTAL ENCODER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Differential scanning for track A and B Constant-light-evaluated scanning for the index track Z with adjustable relative threshold Photocurrent amplifier with high cut-off frequency


    OCR Scan     		PDF PA135-9292-0 g401 smd incremental encoders siemens Siemens encoder cable G701

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2B14 2N3487 2N3488

    2P430

    Abstract: 2P43
    Text: WT 18-2 32.5 Adjustable scanning distance 57.4 50 . 6 0 0 m m F e atu re s: • Red-light e m itter LED as align­ ment aid • Infinitely adjustable scanning distance • Background suppression • Contamination control and alignment aid by means o f flashing


    OCR Scan     		PDF -2P430 2P430 2P43

    transformer dash 2 b-5

    Abstract: No abstract text available
    Text: Models PT-10 and PT-20 VISHAY Vishay Dale Transformers Pulse, Trigger Type FEATURES • Choice of printed circuit or bobbin-type configurations. • Designed to transfer high amplitude or long duration pulses without saturation. Wt: • Designed for low-cost trigger source isolation in half and full wave S C R power


    OCR Scan     		PDF PT-10 PT-20 29-Apr-99 transformer dash 2 b-5