Untitled
Abstract: No abstract text available
Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.
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MB85R2001/MB85R2002
A0-16
MB85RS256
256K-bit
MB85R4xxx
MB85R2001
MB85R2002
MB85R1001
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AK9822M
Abstract: No abstract text available
Text: ASAHI KASEI [AK9822] AK9822 2Kbit EEPROM with 2ch 8bit D/A Converter General Description The AK9822 includes 2 channel, 8 bit D/A converters with on-chip output buffer amps and it is capable to store the input digital data of each D/A converter by on-chip non-volatile CMOS EEPROM.
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AK9822]
AK9822
AK9822
16bit
AK9822M
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Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTT/SLTT2/7 1M-Bit Static RAM e g olta wV r Loon e p Su erati ts Op oduc Pr ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range
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PF873-03
SRM20W117LLTT/SLTT2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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Untitled
Abstract: No abstract text available
Text: PF867-03 SRM20W116LLTX2/7 1M-Bit Static RAM age ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range Volt ow L r e Sup eration Op ducts Pro • DESCRIPTION
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PF867-03
SRM20W116LLTX2/7
120ns
WordsX16-Bit
SRM20W116LLTX2/7
16-bit
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Untitled
Abstract: No abstract text available
Text: PF807-06 SRM21016LLTX12/15 1M-Bit Static RAM ge ltan o V w tio Loperauct O rod P ● Wide Voltage Operation and Low Current Consumption ● Access Time 120ns/150ns 2.7V ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION The SRM21016LLTX12/15 is a 65,536 wordsx16-bit asynchronous, random access memory on a monolithic
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PF807-06
SRM21016LLTX12/15
120ns/150ns
WordsX16-Bit
SRM21016LLTX12/15
SRM21016LL
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Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTX/SLTX2/7 1M-Bit Static RAM e ltag Vo Lown r e Sup eratio ts Op oduc Pr ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns (2.7V) ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range
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PF873-03
SRM20W117LLTX/SLTX2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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sk 3003 s
Abstract: BR9010F
Text: BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W / Memory IC RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W 1k, 2k, 4k, bit EEPROMs for direct connection to serial ports BR9010-W / BR9010F-W / BR9010FV-W / BR9010RFV-W / BR9010RFVM-W
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BR9010-W
BR9020-W
BR9040-W
BR9010F-W
BR9010FV-W
BR9010RFV-W
BR9010RFVM-W
BR9020F-W
sk 3003 s
BR9010F
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Untitled
Abstract: No abstract text available
Text: ASAHI KASEI [AK9822] AK9822 2Kbit EEPROM with 2ch 8bit D/A Converter General Description The AK9822 includes 2 channel, 8 bit D/A converters with on-chip output buffer amps and it is capable to store the input digital data of each D/A converter by on-chip non-volatile CMOS EEPROM.
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AK9822]
AK9822
AK9822
16bit
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MB85R1001
Abstract: MB85R1002 FUJITSU FRAM Ferro
Text: New Products MB85R1001/MB85R1002 1M-bit x8/×16 FRAM 獏 MB85R1001/MB85R1002 獏 This products is a FRAM of 1M-bit 1T1C cell design, featuring high-density, low-power consumption, and high-performance of write/read operation times. Introduction • Operating Conditions
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MB85R1001/MB85R1002
100ns
250ns
I/O9-I/O16
I/O16
A0-15
IO1-16
MB85R1001
MB85R1002
FUJITSU FRAM
Ferro
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Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTX/SLTX2/7 1M-Bit Static RAM e g olta wV r Loon e p Su erati ts Op oduc Pr ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range
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PF873-03
SRM20W117LLTX/SLTX2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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sk 3003 s
Abstract: No abstract text available
Text: BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W / Memory IC RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W 1k, 2k, 4k, bit EEPROMs for direct connection to serial ports BR9010-W / BR9010F-W / BR9010FV-W / BR9010RFV-W / BR9010RFVM-W
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BR9010-W
BR9020-W
BR9040-W
BR9010F-W
BR9010FV-W
BR9010RFV-W
BR9010RFVM-W
BR9020F-W
sk 3003 s
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BR9020RFV-W
Abstract: BR9040RFVM-W BR9010FV-W BR9010F-W BR9010RFVM-W BR9010RFV-W BR9010-W BR9020FV-W BR9020F-W BR9020-W
Text: BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W / Memory IC RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W 1k, 2k, 4k, bit EEPROMs for direct connection to serial ports BR9010-W / BR9010F-W / BR9010FV-W / BR9010RFV-W / BR9010RFVM-W
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BR9010-W
BR9020-W
BR9040-W
BR9010F-W
BR9010FV-W
BR9010RFV-W
BR9010RFVM-W
BR9020F-W
BR9020RFV-W
BR9040RFVM-W
BR9010RFVM-W
BR9020FV-W
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Untitled
Abstract: No abstract text available
Text: GM71C4270A/AL GM71CS4270A/AL GoldStar 262,144 WORDSX16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM 71C4270A/AL is the new generation dynam ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM 71C4270A/AL has realized higher density,
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GM71C4270A/AL
GM71CS4270A/AL
WORDSX16BIT
71C4270A/AL
GM71C4270A/AL
95JMAX
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BR9021A
Abstract: A/M29F010B(45/70/90/D/365/BR9021A
Text: RO HM CO LTD 40E D H 7 0 2 0 =1=1=1 O Q Q 4 SQS X î ' J IC /M em ory ICs BR9021A/BR9021AF U T \> 128X16Bit '> EEPROM 128X16Bit Serial EEPROM m Çk • B R9021A /BR 9021AF l i , 3 BRHn ^ J iE I/D im e n s io n s Unit : mm) 2048 t£ " j Y ( 1 2 8 7 - K X 1 6
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BR9021A/BR9021AF
128X16Bit
128X16Bit
R9021A
9021AF
BR9021A)
BR902x
25-ciyÂ
BR9021A
A/M29F010B(45/70/90/D/365/BR9021A
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