WJ transistor
Abstract: FP2189 THEORY FP1189 FP31QF two transistors matched transistors
Text: Application Note The Communications Edge TM Active-Bias Constant-Current Source Recommended for WJ HFET devices An optional active-bias current mirror is recommended for use with the application circuits shown in WJ’s FP1189 and FP2189 datasheets. All WJ HFET’s require a negative gate voltage with a positive drain voltage.
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FP1189
FP2189
FP2189
FP31QF
1-800-WJ1-4401
WJ transistor
THEORY
FP31QF
two transistors
matched transistors
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AP603
Abstract: transistor 6c x 4401 transistor
Text: Application Note AP603 2015 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
2016MHz
AP603,
AP603
1-800-WJ1-4401
transistor 6c x
4401 transistor
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AP602
Abstract: WJ 58 transistor WJ 60 transistor
Text: Application Note AP602 880 MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP602
consid25oC
PCB880
64DPCH
84MHz
AP602
1-800-WJ1-4401
WJ 58 transistor
WJ 60 transistor
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WJ 60 transistor
Abstract: WJ transistor AP601 power amplifier s band ghz mhz AP601-PCB880
Text: Application Note AP601 880 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
AP601-PCB880
1-800-WJ1-4401
WJ 60 transistor
WJ transistor
power amplifier s band ghz mhz
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AP602
Abstract: No abstract text available
Text: Application Note AP602 2010 - 2025MHz Unconditionally Stable Reference Design Introduction The AP602 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP602
2025MHz
2025MHz
28MHz
2010MHz
AP602.
1-800-WJ1-4401
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AP601
Abstract: No abstract text available
Text: Application Note AP601 900 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
PCB900
AP601,
1-800-WJ1-4401
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AP603
Abstract: AP602 shunt r unconditionally stable transistor high gain 2.4 ghz WJ 60 transistor RF power amplifier MHz
Text: Application Note AP603 1960 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
160mA
1-800-WJ1-4401
AP602
shunt r
unconditionally stable transistor high gain 2.4 ghz
WJ 60 transistor
RF power amplifier MHz
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131-6 wj
Abstract: 131-6 wj 64 131-6 wj 60 AP603 WJ 60 transistor
Text: Application Note AP603 2140 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
AP603,
1-800-WJ1-4401
131-6 wj
131-6 wj 64
131-6 wj 60
WJ 60 transistor
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WJ 58 transistor
Abstract: AP603
Text: Application Note AP603 940 MHz Unconditionally Stable Reference Design Introduction The AP603 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP603
64DPCH
84MHz
AP603,
AP603
1-800-WJ1-4401
WJ 58 transistor
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unconditionally stable transistor high gain 2.4 ghz
Abstract: PCB2020 capacitor 22PF AP601 TRANSISTOR 2025 transistor 2015 20-25MHZ power amplifier s band ghz mhz
Text: Application Note AP601 2015 - 2025 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
28MHz
64MHz
2015MHz
1-800-WJ1-4401
unconditionally stable transistor high gain 2.4 ghz
PCB2020
capacitor 22PF
TRANSISTOR 2025
transistor 2015
20-25MHZ
power amplifier s band ghz mhz
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AP601
Abstract: No abstract text available
Text: Application Note AP601 940 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains an passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
PCB900
AP601,
1-800-WJ1-4401
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WJ 60 transistor
Abstract: WJ transistor ap601 AP601-PCB1960
Text: Application Note AP601 1960 MHz Unconditionally Stable Reference Design Introduction The AP601 is a high voltage HBT amplifier recently released by WJ Communications. The design of the die contains a passive prematch at the input of the transistor to transform the impedance of the device to something more manageable to the
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AP601
AP601-PCB1960
64DPCH,
1930MHz
1-800-WJ1-4401
WJ 60 transistor
WJ transistor
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Untitled
Abstract: No abstract text available
Text: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings
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MPSA65
MMBTA65
PZTA65
MPSA64
MPSA65
MMBTA65
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Untitled
Abstract: No abstract text available
Text: WJ-A65 / SMA65 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +10 dBm TYP. ♦ MEDIUM THIRD ORDER I.P.: +24 dBm (TYP.) Outline Drawings A65 Specifications’* 0.200 (5.08) Guaranteed Typical Characteristics
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WJ-A65
SMA65
50-ohm
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CA-180
Abstract: WJ-CA18
Text: WJ-A18Q/SMA180 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH REVERSE ISOLATION: 22 dB TYP. ♦ HIGH OUTPUT POWER: +18 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.) Small Signal Gain (Min.)
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WJ-A18Q/SMA180
DIME10
CA-180
WJ-CA18
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WJ-CA61
Abstract: No abstract text available
Text: WJ-A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* 0.200 (5.03) Characteristics Guaranteed
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WJ-A61
SMA61
0007CH0
WJ-CA61
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WJ-A88
Abstract: No abstract text available
Text: WJ-A88 / SMA88 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.7 dB TYP. HIGH OUTPUT POWER: +20.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.)
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WJ-A88
SMA88
50-ohm
0DQ71
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Untitled
Abstract: No abstract text available
Text: WJ-A11 /SMA11 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.1 dB TYP. LOW VSWR: 1.3:1 (TYP.) FLAT BANDWIDTH: < ±0.25 dB (TYP.) Outline Drawings Specifications* A11 Characteristics 0.450 D (11.41) Guaranteed
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WJ-A11
/SMA11
50-ohm
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csc2003
Abstract: CSC2003M CSC2002M CSC2003K CSC2003L CSC2120 CSC2120Y CSC2216 CSC2229Y CSC2240
Text: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. CSC2002M Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO ^EBO (V) (V) (V) Po (WJ Min Min Min @Tc=25°a 60 60 5 0.5 *CBO (A) 0.3 Vc *CES ^CE (pA) (V) (pA) 8 (V)
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CSC2002M
O-92-1
CSC2003
CSC2003K
CSC2003M
CSC2003L
CSC2120
CSC2120Y
CSC2216
CSC2229Y
CSC2240
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WJ-A35
Abstract: No abstract text available
Text: WJ-A35 / SMA35 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +9 dBm TYP. ♦ WIDE POWER SUPPLY RANGE: +8 TO + 20 VOLTS Outline Drawings A35 Specifications* Characteristics 0.200 (5.08) Guaranteed Typical
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WJ-A35
SMA35
50-ohm
0D07D42
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WJ-CA70
Abstract: No abstract text available
Text: WJ-A701SMA70 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ VERY LOW NOISE: 1.8 dB TYP. ♦ HIGH EFFICIENCY: +8.5 dBm (TYP.) OUTPUT POWER @ 10 mA (TYP.) Outline Drawings Specifications* Characteristics A70 Typical 0.450 D (11.41)U
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WJ-A701SMA70
DIMENSION01
WJ-CA70
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WJ-A57
Abstract: WJ-CA57 WJA57
Text: WJ-A57 / SMA57 ¡•sii 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +14 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +28.0 dBm (TYP.) Outline Drawings A57 Specifications* 0.200 (5.08) Typical Characteristics Guaranteed
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WJ-A57
SMA57
50-ohm
WJ-CA57
WJA57
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WJ-A26
Abstract: No abstract text available
Text: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed
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WJ-A26
SMA26
50-ohm
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transistor 45 f 123
Abstract: si3300
Text: WJ-A43 / SMA43 100 to 3200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 100-3200 MHz EXCELLENT GAIN BLOCK: 11.5 dB TYP. MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Outline Drawings A43 Specifications* 0.450 D (11.41)°
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WJ-A43
SMA43
transistor 45 f 123
si3300
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