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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is
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uv led 365
Abstract: 22001 VTB6061UVH
Text: VTB Process Photodiodes VTB6061UVH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These
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uv led 365
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Abstract: No abstract text available
Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is
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VTB6061UVJH
Abstract: D92-02 uv led 365
Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is
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VTB6061UVJH
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uv led 365
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiodes VTB6061UV PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These
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D92-02
Abstract: d9202 uv led 365 VTB6061UVJ
Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is
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VTB6061UVJ
D92-02
d9202
uv led 365
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Untitled
Abstract: No abstract text available
Text: VTB Process Photodiodes VTB6061UVH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These
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VTB6061UVH
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uv led 365
Abstract: VTB6061UV
Text: VTB Process Photodiodes VTB6061UV PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These
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uv led 365
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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VTB8440
Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue
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VTB100
VTB9413B
VTB8440
VTB8441
VTB8440B
VTB1013B
VTB1113
2122 opto
VTB1012B
1013B
VTB1112
VTB6061B
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VTP1220FBH
Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0
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VTS3082H
VTS3085H
VTS3185H
VTS3082H
VTS3085H
VTS3185H
VTP1220FBH
VTS3082
VTB9412BH
VTB1013B
VTP1012H
VTB8441BH
VTD34H
VTP4085H
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Untitled
Abstract: No abstract text available
Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 16A Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt
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VTB6061UVJ
D001571
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Untitled
Abstract: No abstract text available
Text: VTB6061UV VTB Process Photodiodes PACKAGE DIM ENSIO N S inch mm PRODUCT DESCRIPTION CASE 15 T O -8 HERMETIC J 'r(37.7 n m 'l CHIP ACTIVE AREA: .058 in Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is
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VTB6061UV
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UV diode 365 nm
Abstract: UV led 200 nm peak uv led 365 VTB6061UVJ
Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C ASE IS A Large area planar silicon photodiode in a three lead TO -8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt
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VTB6061UVJ
10UIS,
UV diode 365 nm
UV led 200 nm peak
uv led 365
VTB6061UVJ
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VTB6061
Abstract: uv led 365 VTB6061UV V0112
Text: VTB6061 UV VTB Process Photodiodes PACKAGE DIMENSIONS inch mm 1 .5 0 (3 8 . 1) • 1 9 6 (4 .9 8 ) PRODUCT DESCRIPTION CASE 15 Large area planar silicon photod iod ein a dual lead T O -8 package with a U V transm itting “flat” w indow . Cathode is com m on to case. Th e se diodes have
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VTB6061
VTB6061UV
3D30b0T
uv led 365
VTB6061UV
V0112
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TB505
Abstract: No abstract text available
Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have
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365nm,
at220nm.
VTS2011
VTS20â
TB505
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DDD104
Abstract: VTB6060UV
Text: SbE ]> • aüaDbDT DDD104Ô T4T IVCT VTB6060UV, 61 UV I VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is
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DDD104Ã
VTB6060UV,
T-41-51
vtb6060uv
vtb6061uv
x1013
DDD104
VTB6060UV
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5041J
Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with
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365nm,
at220nm.
100mW/cm'
200mW/cmJ
5041J
photodiode vtb 5041
VTB8440B
operational amplifier-741
thermopile array
5050J
VTB1013B
VTB8444B
9415B
VTB1012B
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UV diode 365 nm
Abstract: dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec
Text: SbE ]> Hi 3 D 3 0 b D cl DQD104Ô T^T H V C T VTB Process Photodiodes V T B 6 0 6 0 U V , 61 UV E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is
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T-41-51
VTB6060UV,
VTB6060UV
VTB6061UV
x1013
UV diode 365 nm
dual photodiode
uv led 365
L-487
VTB6060UV
VTB6061UV
Vactec
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