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    Excelitas Technologies Corporation VT83N2

    Electronic Component
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    ComSIT USA VT83N2 6,000
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    VT83N Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VT83N1 PerkinElmer Optoelectronics Photoconductive cell. Original PDF
    VT83N1 EG&G Vactec Photoconductive Cell Scan PDF
    VT83N2 PerkinElmer Optoelectronics Photoconductive cell. Original PDF
    VT83N2 EG&G Vactec Photoconductive Cell Scan PDF
    VT83N3 PerkinElmer Optoelectronics Photoconductive cell. Original PDF
    VT83N3 EG&G Vactec Photoconductive Cell Scan PDF
    VT83N4 PerkinElmer Optoelectronics Photoconductive cell. Original PDF
    VT83N4 EG&G Vactec Photoconductive Cell Scan PDF

    VT83N Datasheets Context Search

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    VT83N2

    Abstract: No abstract text available
    Text: Photoconductive Cell VT800 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 175 3.5 mW mW/°C TA –40 to +75


    Original     		PDF VT800 R10/R100) k100/10) VT83N1 VT83N2 VT83N3 VT83N4 VT83N2

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VT83N2

    Abstract: VT83N1 VT83N4 VT83N3 78 mo 5 VT800 VT-800
    Text: Photoconductive Cell VT800 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 175 3.5 mW mW/°C TA –40 to +75


    Original     		PDF VT800 R10/R100) VT83N1 VT83N2 VT83N3 VT83N4 VT83N2 VT83N1 VT83N4 VT83N3 78 mo 5 VT-800

    automatic dimmer headlight using ldr

    Abstract: smoke DETECTOR CIRCUIT DIAGRAM using LDR room light brightness control depends upon sunlight intensity project for free LDR 03 PHOTO RESISTOR PerkinElmer ldr VT43N2 VT93N2 phototransistor application lux meter VT93N1 AUTOMATIC ROOM LIGHT WITH LDR
    Text: Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Photoconductive Cells and Analog Optoisolators Vactrols Specialty Lighting Digital Imaging Telecom Sensors . . Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR


    Original     		PDF D-65199 CA-274 automatic dimmer headlight using ldr smoke DETECTOR CIRCUIT DIAGRAM using LDR room light brightness control depends upon sunlight intensity project for free LDR 03 PHOTO RESISTOR PerkinElmer ldr VT43N2 VT93N2 phototransistor application lux meter VT93N1 AUTOMATIC ROOM LIGHT WITH LDR

    Photoconductive Cell

    Abstract: VT900 VT83N1 VT43N1 VT43N2 VT93N1 VT83N3 VT83N2 VT23N1 VT93N3
    Text: Photoconductive Cell VT900 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 80 1.6 mW mW/°C TA –40 to +75


    Original     		PDF VT900 R10/R100) VT53N1 VT53N2 VT53N3 Photoconductive Cell VT83N1 VT43N1 VT43N2 VT93N1 VT83N3 VT83N2 VT23N1 VT93N3

    BQ-M572RD

    Abstract: No abstract text available
    Text: STEVAL-CBP006V1 UniPower front panel and standby power management controller for STB, TV sets and other consumer devices Data brief Features • Includes the STM8S105xx MCU with 32 Kbytes of Flash memory packaged in an LQFP48 ■ Alternative footprint for MCU in VFQFN32


    Original     		PDF STEVAL-CBP006V1 STM8S105xx LQFP48 VFQFN32 LQFP48 BQ-M572RD

    VT83N2

    Abstract: VT83N1 VT80N1 VT-800 VT80N2 VT800 VT83N3 VT83N4 Photoconductive Cell VT83N
    Text: V T 8 0 0 Series PHOTOCONDUCTIVE CELL PACKAGE DIMENSIONS inch mm .2 1 6 (5 .4 9 ) 1.38 <35.051 .070 Í1.7 8 ) AWG 24 TINNED COPPER LEADS -i LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE


    OCR Scan     		PDF VT800 R1Q/R100) VT80N1 VT80N2 VT83N1 VT83N2 VT-800 VT83N3 VT83N4 Photoconductive Cell VT83N

    Untitled

    Abstract: No abstract text available
    Text: VT800 Series P H O T O C O N D U C T IV E C E L L PACKAGE D IM EN SIO N S inch mm .216(5.49), .070 f 1.78) 1.38 (35.05) AWG 24 TINNED COPPER LEADS LEAD DIA. & PLASTIC COATING NOT CONTROLLED WITHIN .10 (2.5) OF CERAMIC SUBSTRATE. PLASTIC COATED TO PROTECT ACTIVE SURFACE


    OCR Scan     		PDF VT800 VT80N VT83N2 VT83N3 VT83N DG01455