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    VQE 14 D Search Results

    VQE 14 D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEV2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Female Screw Lock UNC 4.40, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    DEO2V2P543M30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 30A, Europe Standard, 500 Cycles, Front: Threaded Insert UNC 4.40, Back: Metal Brackets. Visit Amphenol Communications Solutions

    VQE 14 D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V


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    PDF IRG4IBC20KD 25kHz T0-220

    Untitled

    Abstract: No abstract text available
    Text: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code


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    PDF BSM150GB170DN2 E3166 C67070-A2709-A67 E3166 Oct-27-1997

    Untitled

    Abstract: No abstract text available
    Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties


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    PDF PWWR60CKF6

    vqe 24 e

    Abstract: vqe 24 d
    Text: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL


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    PDF Oct-23-1997 vqe 24 e vqe 24 d

    307d

    Abstract: vqe 14 E P 307 diode 307d
    Text: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code


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    PDF O-218 Q67040-A4221-A2 Dec-02-1996 307d vqe 14 E P 307 diode 307d

    irg4

    Abstract: IRG4RC10U
    Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF RC10U O-252AA EIA-481 irg4 IRG4RC10U

    transistor iqr

    Abstract: No abstract text available
    Text: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V


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    PDF IRG4IBC30KD 25kHz O-220 T0-220 transistor iqr

    Untitled

    Abstract: No abstract text available
    Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz


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    PDF 360Vdc, S5452

    transistor c374

    Abstract: transistor c373 transistor c377
    Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


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    PDF IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4BC20U O-22QAB 100eters

    transistor iqr

    Abstract: g-50Q IRG4BC20U
    Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4BC20U TQ-220AB transistor iqr g-50Q IRG4BC20U

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values


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    PDF 00R600KF3 34G3SR7

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output


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    PDF MHPM7B12A120A/D MHPM7B12A120A

    irgph50ud

    Abstract: IRGPH50u C732 TRANSISTOR transistor C732
    Text: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    PDF IRGPC50UD2 DD2D521 O-247AC C-732 GG20522 irgph50ud IRGPH50u C732 TRANSISTOR transistor C732

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1572 International I R Rectifier IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF RC10U O-252AA 002025b

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC20UD T0220AB transistor IR 840 OZ930

    bup3140

    Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
    Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code


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    PDF O-218AB Q67040-A4226-A2 l-30-1996 GPT05155 bup3140 BUP 3140 BUP 300 L30 diode 4 pin

    Untitled

    Abstract: No abstract text available
    Text: International IC R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .


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    PDF IRG4PC40FD O-247AC 554S2

    Irgbc20fd2

    Abstract: No abstract text available
    Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


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    PDF IRGBC20FD2 10kHz) T0-22QAB C-100 Irgbc20fd2

    IRG4PC40K

    Abstract: irg4pc40kd
    Text: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short


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    PDF O-247AC IRG4PC40KD IRG4PC40K irg4pc40kd

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses


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    PDF IRGPC50MD2 -10ps 10kHz) C-405 O-247AC C-406

    c845

    Abstract: No abstract text available
    Text: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    PDF IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845

    79lc

    Abstract: No abstract text available
    Text: International IOR Rectifier PD -5.039 CPV363M 4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz


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    PDF CPV363M 79lc

    TRANSISTOR 2FE

    Abstract: No abstract text available
    Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30U O-247AC TRANSISTOR 2FE