Untitled
Abstract: No abstract text available
Text: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V
|
OCR Scan
|
PDF
|
IRG4IBC20KD
25kHz
T0-220
|
Untitled
Abstract: No abstract text available
Text: euoec BSM150GB170DN2 E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • on,min = "10 Ohm Type BSM150GB170DN2 E3166 VbE h 1700V 220A Package Ordering Code
|
OCR Scan
|
PDF
|
BSM150GB170DN2
E3166
C67070-A2709-A67
E3166
Oct-27-1997
|
Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties
|
OCR Scan
|
PDF
|
PWWR60CKF6
|
vqe 24 e
Abstract: vqe 24 d
Text: euoec F BSM 20 GD 60 DL IGBT Power Module Prelim inary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package O rdering Code BSM 20 GD 60 DL
|
OCR Scan
|
PDF
|
Oct-23-1997
vqe 24 e
vqe 24 d
|
307d
Abstract: vqe 14 E P 307 diode 307d
Text: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code
|
OCR Scan
|
PDF
|
O-218
Q67040-A4221-A2
Dec-02-1996
307d
vqe 14 E
P 307
diode 307d
|
irg4
Abstract: IRG4RC10U
Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
RC10U
O-252AA
EIA-481
irg4
IRG4RC10U
|
transistor iqr
Abstract: No abstract text available
Text: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V
|
OCR Scan
|
PDF
|
IRG4IBC30KD
25kHz
O-220
T0-220
transistor iqr
|
Untitled
Abstract: No abstract text available
Text: I . I P D -5038 International I@R Rectifier CPV 363M 4F preliminary IGBT SIP MODULE Features • • • • Fast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz
|
OCR Scan
|
PDF
|
360Vdc,
S5452
|
transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
|
OCR Scan
|
PDF
|
IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
|
Untitled
Abstract: No abstract text available
Text: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
IRG4BC20U
O-22QAB
100eters
|
transistor iqr
Abstract: g-50Q IRG4BC20U
Text: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
IRG4BC20U
TQ-220AB
transistor iqr
g-50Q
IRG4BC20U
|
Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values
|
OCR Scan
|
PDF
|
00R600KF3
34G3SR7
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output
|
OCR Scan
|
PDF
|
MHPM7B12A120A/D
MHPM7B12A120A
|
irgph50ud
Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Text: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
|
OCR Scan
|
PDF
|
IRGPC50UD2
DD2D521
O-247AC
C-732
GG20522
irgph50ud
IRGPH50u
C732 TRANSISTOR
transistor C732
|
|
Untitled
Abstract: No abstract text available
Text: P D - 9.1572 International I R Rectifier IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
RC10U
O-252AA
002025b
|
transistor IR 840
Abstract: OZ930
Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
|
OCR Scan
|
PDF
|
IRG4BC20UD
T0220AB
transistor IR 840
OZ930
|
bup3140
Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code
|
OCR Scan
|
PDF
|
O-218AB
Q67040-A4226-A2
l-30-1996
GPT05155
bup3140
BUP 3140
BUP 300
L30 diode 4 pin
|
Untitled
Abstract: No abstract text available
Text: International IC R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .
|
OCR Scan
|
PDF
|
IRG4PC40FD
O-247AC
554S2
|
Irgbc20fd2
Abstract: No abstract text available
Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGBC20FD2
10kHz)
T0-22QAB
C-100
Irgbc20fd2
|
IRG4PC40K
Abstract: irg4pc40kd
Text: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
|
OCR Scan
|
PDF
|
O-247AC
IRG4PC40KD
IRG4PC40K
irg4pc40kd
|
Untitled
Abstract: No abstract text available
Text: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses
|
OCR Scan
|
PDF
|
IRGPC50MD2
-10ps
10kHz)
C-405
O-247AC
C-406
|
c845
Abstract: No abstract text available
Text: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
|
OCR Scan
|
PDF
|
IRGBC30K
C-847
O-22QAB
C-848
4A554S2
0020b3fl
c845
|
79lc
Abstract: No abstract text available
Text: International IOR Rectifier PD -5.039 CPV363M 4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
|
OCR Scan
|
PDF
|
CPV363M
79lc
|
TRANSISTOR 2FE
Abstract: No abstract text available
Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
IRG4PC30U
O-247AC
TRANSISTOR 2FE
|