wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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E720BXF
Abstract: EDGE720 E720BXF EDGE Edge710 EVM720BXF
Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load HIGH-PERFORMANCE PRODUCTS – ATE Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range
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Edge720
Edge720
E720BXF
EVM720BXF
E720BXF
E720BXF EDGE
Edge710
EVM720BXF
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Untitled
Abstract: No abstract text available
Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description PRELIMINARY Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable
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Edge720
com60
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Edge710
Abstract: E720BXF Edge4707B EVM720BXF
Text: Edge720 500 MHz Pin Electronics Driver, Window Comparator, and Load TEST AND MEASUREMENT PRODUCTS Description Features • Fully Integrated Three-Statable Driver, Window Comparator, and Dynamic Active Load • 13V Driver, Load, Compare Range • +13V Super Voltage Capable
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Edge720
Edge720
Edge710
E720BXF
Edge4707B
EVM720BXF
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TL 431 SO8
Abstract: 2SD203 SD203DC P3NF
Text: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R
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SD200,
SD201
SD202,
SD203
SD203DC
SD202DC
SD200DC
SD200DC/R
SD201DC/R
SD202DC/R
TL 431 SO8
2SD203
P3NF
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification
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BFQ236;
BFQ236A
OT223
BFQ256
BFQ256A.
SCA55
127027/00/02/pp8
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motorola TE 901
Abstract: MK1V135 2N390S MC14404
Text: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car
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MC3419-1L
mF/20V
aiF/40
iF/60
MJE271
MJE270
MPSA56
2N3905
1N4007
motorola TE 901
MK1V135
2N390S
MC14404
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D147D
Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC
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C520D
D147D
C520D
vqb 71
VQB71
D347D
d348d
VQE23
D346D
Halbleiterbauelemente DDR
VQE24
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2SC394
Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
Text: S/UD>NPNZm«0Bh5:VS>;*5KPCT75iW 2SC 394 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS o mmwLmmm o High Frequency Amplifier Applications Unit in mm 0 5.8 MAX. 0 4 . 9 5 MAX. o PM Frequency Converter Applications 3E& => ^ * # * * ftzk S w ; ^Q 4 5 # o b = 9 “U
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2sc394
100MHz)
200MHz
j2f58MAX.
95MAJ(
100MHz
2SC394
TRANSISTOR 2SC394
2SC394-0
2SC394-R
251C
HSE2
Produced by Perfect Crystal Device Technology
2SC394 transistor
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Untitled
Abstract: No abstract text available
Text: November 1997 FAIRCHILD SEM ICONDUCTO R PR E LIM IN A R Y m FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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FDP6030L
FDB6030L
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Untitled
Abstract: No abstract text available
Text: UNIVERSAL SEMICONDUCTOR 41E D • T3t.ö341 Q D G O I O S U N IV E R S A L 455 ■ UNV T~3?~OS SD210, SD 211, S D 2 12 SD213, SD 214, S D 215 N-Channel Enhancement-Mode Lateral D-MOS FETs O rd ering Info rm ation O a t* P ro ta o tlv a D loda 1 0 V ,480 20V, 45»
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SD210,
SD213,
SD211DE
SD2130E
SD211DE/R
SD213DE/R
SD211CHP
SD213CHP
SD210DE
SD212DE
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2N6715
Abstract: 2N6714 2N6726 92GU01
Text: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.
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2N6726,
27/92GU51,
92GU01
2N6714
O-237
2N6714
2N6715
2N6726
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ECJF
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC20F
O-220AB
ECJF
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DIODE FS 607
Abstract: marking j9 sot-23 sot-23 package marking J9 TSM2312CX TSM2312 1Q1 SOT 6u sot-23
Text: s TAIWAN pb RoHS TSM2312 S E M IC O N D U C T O R 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SOT-23 3 P in D e fin itio n : V ds (V) 1. Gate 2. Source 3. Drain 20 1 2 Features RDS(on)(mÛ) Id (A) 33 @ Vgs= 4 .5V 4.9 4Û @ Vos = 2.5V 4.4 51 @ V g »= 1.8V
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TSM2312
OT-23
TSM2312CX
OT-23
DIODE FS 607
marking j9 sot-23
sot-23 package marking J9
TSM2312
1Q1 SOT
6u sot-23
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10ID
Abstract: 2SC2995 P100 R6P-F
Text: 2SC2995 TO SH IBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2995 Unit in mm FM /A M RF, MIX, OSC, IF HIGH FREQUENCY A M PLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM/AM RF, MIX, OSC and IF.
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2SC2995
55MAX.
10ID
2SC2995
P100
R6P-F
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motorola 9100-11
Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Text: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC
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MC33120/D
MC33120
motorola 9100-11
Battery Managements
MC33120P
mjd41
rs 3060 cj
1N4002
MC33120FN
ST12
ST21
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Untitled
Abstract: No abstract text available
Text: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and
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AWT919D
T919D
kZ25H3
06/07/98-AWT919d
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Untitled
Abstract: No abstract text available
Text: October 1997 FAIRCHILD M lC O N D U C T O R FDC6320C Dual N & P Channel, Digital FET General Description Features T h e s e dual N & P C hannel logic level en hancem ent m ode field e ffe c tra nsistors are produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high de nsity
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FDC6320C
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -1H 0M S 0N D lsi S IILICTIs! iD©S VNP10N06 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N06 . . . . . . . . . . V clamp 60 V RDS(on) 0 .3 a. 11im 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP10N06
O-220
VNP10N06
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9952a
Abstract: No abstract text available
Text: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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NDS9952A
9952a
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Untitled
Abstract: No abstract text available
Text: E m m AWT919D TX POWER MMIC a c s ' Your GaAs IC Source A d va n ce d P ro d u ct ln fo r 1™ 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: V D IJ k YD2JL The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both
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AWT919D
T919D
Q0000409CW4H40000MQ
04CHKCW
06/07/98-AWT919d
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