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    VP100 Search Results

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    VP100 Price and Stock

    Panasonic Electronic Components 6SVP100M

    CAP ALUM POLY 100UF 20% 6.3V SMD
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    DigiKey 6SVP100M Cut Tape 3,677 1
    • 1 $1.16
    • 10 $0.69
    • 100 $0.654
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    6SVP100M Digi-Reel 3,677 1
    • 1 $1.16
    • 10 $0.69
    • 100 $0.654
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    6SVP100M Reel 3,000 1,000
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    • 1000 $0.441
    • 10000 $0.383
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    Mouser Electronics 6SVP100M
    • 1 $1.16
    • 10 $0.672
    • 100 $0.654
    • 1000 $0.429
    • 10000 $0.383
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    Newark 6SVP100M Reel 1,000 1,000
    • 1 $0.482
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    6SVP100M Cut Tape 363 1
    • 1 $0.404
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    TTI 6SVP100M Reel 2,000 1,000
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    • 1000 $0.42
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    TME 6SVP100M 1
    • 1 $1.23
    • 10 $0.98
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    Avnet Abacus 6SVP100M Reel 44 Weeks 1,000
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    Chip1Stop 6SVP100M Cut Tape 490
    • 1 $0.894
    • 10 $0.657
    • 100 $0.479
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    New Advantage Corporation 6SVP100M 2,000 1
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    Panasonic Electronic Components 16SVP100M

    CAP ALUM POLY 100UF 20% 16V SMD
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    DigiKey 16SVP100M Cut Tape 1,867 1
    • 1 $1.45
    • 10 $0.898
    • 100 $0.855
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    16SVP100M Digi-Reel 1,867 1
    • 1 $1.45
    • 10 $0.898
    • 100 $0.855
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    16SVP100M Reel 1,500 500
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    Avnet Americas 16SVP100M Reel 500 22 Weeks 500
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    • 1000 $0.56402
    • 10000 $0.52828
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    Mouser Electronics 16SVP100M 7,610
    • 1 $1.5
    • 10 $0.898
    • 100 $0.855
    • 1000 $0.521
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    Newark 16SVP100M Cut Tape 501 1
    • 1 $0.538
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    16SVP100M Reel 500 500
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    TTI 16SVP100M Reel 8,500 500
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    • 1000 $0.527
    • 10000 $0.497
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    TME 16SVP100M 1
    • 1 $1.28
    • 10 $0.84
    • 100 $0.66
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    Avnet Abacus 16SVP100M Reel 44 Weeks 1,000
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    Chip1Stop 16SVP100M Cut Tape 22
    • 1 $1.41
    • 10 $0.885
    • 100 $0.885
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    Eaton Bussmann VP1-0059-R

    XFMR 3.8UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VP1-0059-R Digi-Reel 1,143 1
    • 1 $8.22
    • 10 $6.378
    • 100 $4.938
    • 1000 $4.45544
    • 10000 $4.45544
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    VP1-0059-R Cut Tape 1,143 1
    • 1 $8.22
    • 10 $6.378
    • 100 $4.938
    • 1000 $4.45544
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    VP1-0059-R Reel 600 600
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    • 10000 $4.03148
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    Master Electronics VP1-0059-R 600
    • 1 -
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    • 100 $4.16
    • 1000 $3.92
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    Sager VP1-0059-R 600
    • 1 -
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    Eaton Bussmann VP1-0076-R

    XFMR 4.9UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VP1-0076-R Cut Tape 702 1
    • 1 $8.92
    • 10 $6.923
    • 100 $5.359
    • 1000 $4.83488
    • 10000 $4.83488
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    VP1-0076-R Digi-Reel 702 1
    • 1 $8.92
    • 10 $6.923
    • 100 $5.359
    • 1000 $4.83488
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    VP1-0076-R Reel 600 600
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    Sager VP1-0076-R 600
    • 1 -
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    • 1000 $5.67
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    Panasonic Electronic Components 20SVP100M

    CAP ALUM POLY 100UF 20% 20V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 20SVP100M Cut Tape 1 1
    • 1 $1.93
    • 10 $1.02
    • 100 $0.813
    • 1000 $0.813
    • 10000 $0.813
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    20SVP100M Digi-Reel 1 1
    • 1 $1.93
    • 10 $1.02
    • 100 $0.813
    • 1000 $0.813
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    Mouser Electronics 20SVP100M 3,740
    • 1 $1.93
    • 10 $1.02
    • 100 $0.83
    • 1000 $0.696
    • 10000 $0.652
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    TTI 20SVP100M Reel 4,800 400
    • 1 -
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    • 1000 $0.645
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    TME 20SVP100M 116 1
    • 1 $1.71
    • 10 $0.99
    • 100 $0.71
    • 1000 $0.71
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    ComSIT USA 20SVP100M 100
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    Avnet Abacus 20SVP100M Reel 12,800 44 Weeks 400
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    New Advantage Corporation 20SVP100M 1,600 1
    • 1 -
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    VP100 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VP-1000A ELETECH Digital Voice Processor Original PDF
    VP1000A Unknown Digital Voice Processor Original PDF
    VP-1000AF Unknown Digital Voice Processor Original PDF
    VP-1000SB Amprobe Equipment - Electrical Testers, Current Probes, Test and Measurement, VOLT PROBE W/SHAKER/BUZZER Original PDF
    VP1001P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP1-0059 Cooper Bussmann Inductor: Chip: 3.8u: 20% Original PDF
    VP1-0059-R Cooper Bussmann Inductor; Series:VP; Inductance:3.8uH; Inductance Tolerance:+/- 20 %; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current, It rms:0.85A; DC Resistance Max:0.145ohm; Leaded Process Compatible:Yes Original PDF
    VP1006B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP1-0076 Cooper Bussmann Inductor: Chip: 4.9u: 20% Original PDF
    VP1-0076-R Cooper Bussmann Inductor; Series:VP; Inductance:4.9uH; Inductance Tolerance:+/- 20 %; Terminal Type:PCB Surface Mount; Core Material:Ferrite; Current, It rms:0.85A; DC Resistance Max:0.145ohm; Leaded Process Compatible:Yes Original PDF
    VP1008 Unknown P-Channel Enhancement-Mode D-MOS POWER FETs Scan PDF
    VP1008B Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP1008B Siliconix P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP1008B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VP1008B Unknown FET Data Book Scan PDF
    VP1008B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP1008B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP1008B Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VP1008CHP Topaz Semiconductor -100 V, 5 ?, P-channel enhancement-mode D-MOS power FET Scan PDF
    VP1008CSM4 Semelab P-Channel Enhancement Mode MOSFET Original PDF

    VP100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5


    Original
    PDF VP0808L, VP1008L VP0808L O-226AA) S-00530--Rev. 03-Apr-00 VP0808L VP1008L

    VP0808B

    Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


    Original
    PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M

    VP1008CSM4

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 • Low On-Resistance, RDS on • Moderate Threshold, VGS(th) • Low Input Capacitance, CISS • Fast Switching Speed • Hermetic Ceramic Surface Mount Package • Ideally Suited For Power Supply Circuits, Switching And


    Original
    PDF VP1008CSM4 300mA 195mA 400mW MO-041BA VP1008CSM4

    Untitled

    Abstract: No abstract text available
    Text: MS1157 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 100m Peak Curr. Tol.10m Total Cap. (F)50p Ip/Iv Min6.0 Vp100m Vv390m Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H).30n R(series) (Ohms).50 Neg Resist.2.0 Semiconductor MaterialGermanium


    Original
    PDF MS1157 Vp100m Vv390m Ipeak510m

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original
    PDF VP0808L, VP1008L VP0808L 18-Jul-08 VP0808L VP1008L

    Untitled

    Abstract: No abstract text available
    Text: 1N3129 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.1.0m Total Cap. (F)20p Ip/Iv Min8.0 Vp100m Vv300m Fwd Volt @Ipeak575m Resist. Cutoff Freq Series Induct. (H)600p R(series) (Ohms)2.5 Neg Resist. Semiconductor MaterialGermanium


    Original
    PDF 1N3129 Vp100m Vv300m Ipeak575m StyleDO-25var

    TO-205AD

    Abstract: VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V


    Original
    PDF VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. TO-205AD VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 • Low On-Resistance, RDS on • Moderate Threshold, VGS(th) • Low Input Capacitance, CISS • Fast Switching Speed • Hermetic Ceramic Surface Mount Package • Ideally Suited For Power Supply Circuits, Switching And


    Original
    PDF VP1008CSM4 300mA 195mA 400mW MO-041BA)

    VP1008CSM4

    Abstract: PULSE MODE CURRENT SOURCE
    Text: VP1008CSM4 P–CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =100V 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003)


    Original
    PDF VP1008CSM4 300mA VP1008CSM4 300ms PULSE MODE CURRENT SOURCE

    VP0808L

    Abstract: VP1008L
    Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28


    Original
    PDF VP0808L, VP1008L VP0808L 08-Apr-05 VP0808L VP1008L

    Untitled

    Abstract: No abstract text available
    Text: V P 0 80 8 Supertex inc. ^ VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B ^dss ^ Order Number / Package ^DS ON ^O(ON) b v dgs (max) (min) TO-39 TO-92 -80V 5i2 -1.1 A VP0808B VP0808L -100V 5 fi -1.1A


    OCR Scan
    PDF VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 300ms

    Untitled

    Abstract: No abstract text available
    Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5


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    PDF VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Appli-12 P-37655--

    Untitled

    Abstract: No abstract text available
    Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =


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    PDF YP0808B/L/M, YP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O-226AA) P-37655--

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P

    VN0300M

    Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
    Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)


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    PDF VNMH03 80pisâ 300pis, VN0300D, VN0300M, VP1001P, VQ1001J, VQ3001P, VQ3001J, VQ7254P, VN0300M VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


    OCR Scan
    PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B

    VP2410

    Abstract: No abstract text available
    Text: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L


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    PDF VP0808B/L/M VP1008B/L/M VQ2004J \/PDV10 VQ2006J VPDV10 TP2010L TP2410L VP2410L VPDV10 VP2410

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


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    PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    Untitled

    Abstract: No abstract text available
    Text: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology


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    PDF VP0808 VP1008 VP0808B VP1008B -100V VP0808L VP1008L VP1008 VP0808

    VP0808M

    Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


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    PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln IN400 VP0300B VP0300M VP0808L VQ2001P

    VP8080

    Abstract: No abstract text available
    Text: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L


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    PDF VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 VP8080

    vp0808b

    Abstract: No abstract text available
    Text: Tem ic VP0808B/L/M, VP1008B/L/M_ Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number I d A rBS(on) Max (Q) VGS(th) (V) 5 @ VGS = - 1 0 V - 2 to -4 .5 -0 .8 8 5 @ V GS = - 1 0 V - 2 to -4 .5 -0 .2 8 VP0808M 5 @ V o s = -10 V


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    PDF VP0808B/L/M, VP1008B/L/M_ VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M T0-205A P-37655--Rev.

    VP1008

    Abstract: No abstract text available
    Text: Super te x inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / B V cos Order Number / Package R d S ON *D<ON) (max) (min) TO-39 TO-92 VP0808L VP1008L -80V 5Ü -1.1A VP0808B -100V 5U -1.1A VP1008B Advanced DMOS Technology


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    PDF VP0808 VP1008 VP0808L VP1008L VP0808B -100V VP1008B 300tis 000437D VP1008