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    Bourns Inc PDA17-VN20-104AK

    RES CBNFLM POT 100K OHM 20% 1/20W 6MM PIN TH - Bulk (Alt: PDA17-VN20-104AK)
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    Bourns Inc PDA17-VN20-104BK

    RES CBNFLM POT 100K OHM 20% 1/10W 6MM PIN TH - Bulk (Alt: PDA17-VN20-104BK)
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    Bourns Inc PDA17-VN20-102BK

    RES CBNFLM POT 1K OHM 20% 1/10W 6MM PIN TH - Bulk (Alt: PDA17-VN20-102BK)
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    Bourns Inc PDA17-VN20-103BK

    RES CBNFLM POT 10K OHM 20% 1/10W 6MM PIN TH - Bulk (Alt: PDA17-VN20-103BK)
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    Brennan Industries NVN-2010-B

    NEEDLE VALVE, HYDRAULIC,04IN-04MP Integral Bonnet Reg Stem typ Brass | Brennan NVN-2010-B
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    RS NVN-2010-B Bulk 5 Weeks 1
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    VN2010 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN2010L Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VN2010L Temic Semiconductors N-Channel Enhancement-Mode MOS Transistors Original PDF
    VN2010L Vishay Intertechnology N-Channel 200-V (D-S) MOSFET Original PDF
    VN2010L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN2010L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VN2010L-TR1 Vishay Transistor Mosfet N-CH 200V 0.19A 3TO-226AA T/R Original PDF

    VN2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent of BS107

    Abstract: BS107 VN2010L BS107 application
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original     		PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application

    VN2010L

    Abstract: p-channel 200V
    Text: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) 200V 10Ω 2.0V Order Number / Package TO-92 VN2010L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF VN2010L 250mA VN2010L p-channel 200V

    BS107

    Abstract: VN2010L
    Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D


    Original     		PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L

    Untitled

    Abstract: No abstract text available
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original     		PDF VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05

    BS107

    Abstract: 55C24 VN2010L
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W


    Original     		PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM O-226AA) S-04279--Rev. 16-Jul-01 BS107 55C24 VN2010L

    VN2010L

    Abstract: BS107
    Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D


    Original     		PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 VN2010L BS107

    TO-92-18RM

    Abstract: BS107 VN2010L TO-92-18R
    Text: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications


    Original     		PDF VN2010L/BS107 VN2010L BS107 O226AA) P-38283--Rev. TO-92-18RM BS107 VN2010L TO-92-18R

    equivalent of BS107

    Abstract: BS107 application BS107 vn2010l
    Text: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D


    Original     		PDF VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 equivalent of BS107 BS107 application BS107 vn2010l

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    One-chip telephone IC

    Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
    Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the


    Original     		PDF 29C93A 102/V V25bis) PQFP44 29C93A 29C921 80C51 One-chip telephone IC telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		PDF AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


    Original     		PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610

    VN2010

    Abstract: No abstract text available
    Text: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V g Order Number / Package S(U i ) b v dgs (max) (max) TO-92 200V 10Q 2.0V VN2010L Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF VN2010L 250mA VN2010

    VN2020L

    Abstract: No abstract text available
    Text: • SILICONIX INC C T Siliconix 855*4735 00140=1« 1 ■ VN2010 SERIES J L M in c o r p o r a t e d N-Channel Enhancement-Mode M O S Transistors T-TSt-2.5 PRODUCT SUMMARY PART NUMBER V BR DSS fDS(ON) (V) (« ) TO-92 *D (A) PACKAGE VN2010L 200 10 0.19 TO-92


    OCR Scan     		PDF VN2010 VN2010L VN2020L VNDQ20 VN2020L

    Untitled

    Abstract: No abstract text available
    Text: VN2010L N-Channel Enhancement-Mode MOS Transistor JTtSgft PRODUCT SUMMARY V BR DSS (V) 200 Performance Curves: TO-92 (TO-226AA) T •d (A) 10 0.19 VNDQ20 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 .1— Ln ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF VN2010L VNDQ20 O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: ^ Su perte x inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ BV dgs Order Number / Package R DS ON ^G S (th) (max) (max) TO-92 10 ÌÌ 2.0V VN2010L 200V Features Advanced DMOS Technology Li These enhancement-mode (normally-off) transistors utilize a


    OCR Scan     		PDF VN2010L 300jas 00D43DÃ 250mA

    VN2010L

    Abstract: S0427 siliconix marking code BS107
    Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2


    OCR Scan     		PDF VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM S-04279-- 16-Jul-01 O-226AA) S-0427 S0427 siliconix marking code

    ha1100

    Abstract: UG-94 bs107
    Text: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107


    OCR Scan     		PDF VN2010L/BS107 N2010L BS107 O-226AA) ug-94 ha1100 UG-94

    Untitled

    Abstract: No abstract text available
    Text: Temic VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12


    OCR Scan     		PDF VN2010L/BS107 VN2010L BS107 Su5/94) O-226AA) P-38283--

    Untitled

    Abstract: No abstract text available
    Text: mSg3& VNDQ20 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS107 VN2010L Single Chip • Available as VNDQ5CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics fo r Low Gate Drive Ohmic Region Characteristics VDS (V) VDS (V)


    OCR Scan     		PDF VNDQ20 O-226AA) BS107 VN2010L VNDQ20

    Untitled

    Abstract: No abstract text available
    Text: ^ VN2010L S u p e r te x m e . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV qss ^ BVDgs ^DS ON (max) ^GS(th) (max) 200V 10C2 1.8V Order Number / Package TO-92 VN2010L Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan     		PDF VN2010L 100mA 250mA

    BS-107C

    Abstract: No abstract text available
    Text: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits


    OCR Scan     		PDF VN2010L/BS107 VN2010L BS107 P-38283--Rev. O-226AA) BS-107C