smc diode
Abstract: No abstract text available
Text: SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads.
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SC-59,
SC-70/SOT-323,
OD-123,
OT-23,
OT-143,
OT-223,
SO-14,
SO-16,
smc diode
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Untitled
Abstract: No abstract text available
Text: MSD1328-RT1, MSD1328-ST1 Preferred Device NPN Low Voltage Output Amplifiers - Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 25 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage
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MSD1328-RT1,
MSD1328-ST1
SC-59
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SMD310
Abstract: No abstract text available
Text: MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage
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MSD602-RT1
SC-59
SMD310
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SMD310
Abstract: No abstract text available
Text: MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −45 Vdc Emitter−Base Voltage
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MSB709-RT1
SMD310
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Untitled
Abstract: No abstract text available
Text: INFORMATION FOR USING SURFACE MOUNT THYRISTORS MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
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OT-223
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bt1 marking
Abstract: SMD310
Text: MSC2295-BT1, MSC2295-CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage
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MSC2295-BT1,
MSC2295-CT1
MSC2295-BT1
MSC2295-CT1
bt1 marking
SMD310
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SMD310
Abstract: No abstract text available
Text: MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage
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MSD601-RT1,
MSD601-ST1
SC-59
SMD310
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Untitled
Abstract: No abstract text available
Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151KT1,
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
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Untitled
Abstract: No abstract text available
Text: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc
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MSA1162GT1,
MSA1162YT1
SC-59
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Untitled
Abstract: No abstract text available
Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151AT1,
M1MA152AT1
SC-59
M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for
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500D
Abstract: LR7189 litton CONNECTOR
Text: Application Specification AMPMODU* 114-25018 Mod II and Mod IV Printed Circuit Board Connectors NOTE i 19 MAY 08 Rev E All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters. Unless otherwise specified, dimensions have a tolerance of +0.13 and angles have a tolerance of +2 . Figures and
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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MMBD352WT1
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Alpha 611 RMA
Abstract: EIA-700-AAAB robotic vacuum cleaner circuit robotic vacuum cleaner EIA-700 AAAB EIA-364-52 vitronics smd EIA-700AAAB
Text: Application Specification 1.0 mm Free Height FH Plug and Receptacle Connectors Using Surface Mount Technology (SMT) NOTE i 114-25045 19 DEC 08 Rev C All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and
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Untitled
Abstract: No abstract text available
Text: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc
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MSC2712GT1,
MSC2712YT1
SC-59
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Untitled
Abstract: No abstract text available
Text: BAT54SWT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAT54SWT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBD717LT1 Common Anode Schottky Barrier Diodes ON Semiconductor Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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MMBD717LT1
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DIODE M4A
Abstract: M4A sot23
Text: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV109LT1
MV209
MMBV109LT1,
MV209
DIODE M4A
M4A sot23
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Untitled
Abstract: No abstract text available
Text: PZTA96ST1 Preferred Device High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage VCBO −450 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC −500
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PZTA96ST1
ZTA96
OT-223,
O-261AA
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Untitled
Abstract: No abstract text available
Text: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current
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BAW56TT1
OT-416/SC-75
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.
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MMBV3102LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 100 V Recurrent Peak Forward Current IF 200 mA IFM surge 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C
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M1MA174T1
SC-70/SOT-323
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motorola 820
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA MMSD914T1 Motorola Preferred Device Switching Diode This switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time
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MMSD914T1/D
MMSD914T1
OD-123
MMSD914T3
inch/10
MMSD914T1
2PHX34003F-0
motorola 820
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motorola M1MA151W
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WKT1/D
M1MA151WKT1
M1MA152WKT1
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3to
inch/10
motorola M1MA151W
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