BAS16WT1
Abstract: BAS16WT1G BAW62 diode marking code A6
Text: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)
|
Original
|
BAS16WT1
BAS16WT1/D
BAS16WT1
BAS16WT1G
BAW62
diode marking code A6
|
PDF
|
vfr phoenix box
Abstract: 2x BAW62
Text: BAS16M3T5G Preferred Device Product Preview Silicon Switching Diode Features • This is a Pb−Free Device http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge)
|
Original
|
BAS16M3T5G
BAS16M3T5G
OT-723
OT-723
631AA
BAS16M3/D
vfr phoenix box
2x BAW62
|
PDF
|
BAW62
Abstract: DA121TT1 DA121TT1G pad6a
Text: DA121TT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 80 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA
|
Original
|
DA121TT1
DA121TT1D
BAW62
DA121TT1
DA121TT1G
pad6a
|
PDF
|
BAS16DXV6T1
Abstract: BAS16DXV6T1G BAS16DXV6T5 BAS16DXV6T5G BAW62
Text: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Max Unit 6 1 Continuous Reverse Voltage VR 75 V 4 3 Recurrent Peak Forward Current IF 200 mA
|
Original
|
BAS16DXV6T1,
BAS16DXV6T5
BAS16DXV6/D
BAS16DXV6T1
BAS16DXV6T1G
BAS16DXV6T5
BAS16DXV6T5G
BAW62
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA
|
Original
|
BAS16DXV6T1,
BAS16DXV6T5
BAS16DXV6/D
|
PDF
|
ANSI Y14.5
Abstract: MAL100
Text: MPSW05 MPSW06 NPN ONE WATT SiLICON AMPLIFIER TRANSISTORS designed for use as medium-power @ High Collector-Emitter V BR CEO = 60 Vdc (Min) = 80 Vdc (Min) @ Low Collector-Emitter vCE(sat) I Collector-Base Voltage Emitter-Base Voltage ~‘ Total Power Dis~@$$:@
|
Original
|
MPSW05
MPSW06
MPSW56
1d805
0S5833
ANSI Y14.5
MAL100
|
PDF
|
NSD914XV2T1
Abstract: No abstract text available
Text: NSD914XV2T1 Preferred Device High−Speed Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com 1 CATHODE MAXIMUM RATINGS (TA = 25°C)
|
Original
|
NSD914XV2T1
OD-523
NSD914XV2T1/D
NSD914XV2T1
|
PDF
|
BAV99LT1G
Abstract: BAV99LT1 Code sot-23 on semiconductor pdf marking a7 onsemi 035 diode SOT-23 Package onsemi BAV99LT3 BAV99LT3G SOT23 DIODE marking CODE AV On semiconductor date Code BAV99LT1G
Text: BAV99LT1 Preferred Device Dual Series Switching Diode Features • Pb−Free Packages are Available http://onsemi.com ANODE 1 MAXIMUM RATINGS Each Diode Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage
|
Original
|
BAV99LT1
BAV99LT1/D
BAV99LT1G
BAV99LT1
Code sot-23 on semiconductor pdf marking a7
onsemi 035 diode
SOT-23 Package onsemi
BAV99LT3
BAV99LT3G
SOT23 DIODE marking CODE AV
On semiconductor date Code BAV99LT1G
|
PDF
|
Diode marking CODE 5M SOD
Abstract: NSD914XV2T1G NSD914XV2T1
Text: NSD914XV2T1 Preferred Device High−Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available
|
Original
|
NSD914XV2T1
OD-523
NSD914XV2T1/D
Diode marking CODE 5M SOD
NSD914XV2T1G
NSD914XV2T1
|
PDF
|
BAL99LT1
Abstract: BAL99LT1G
Text: BAL99LT1 Switching Diode Features • Pb−Free Package is Available http://onsemi.com ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Maximum ratings are those values beyond which device damage can occur.
|
Original
|
BAL99LT1
OT-23
BAL99LT1/D
BAL99LT1
BAL99LT1G
|
PDF
|
BAS16HT1G
Abstract: marking 25 SOD-323 marking code onsemi Diode A6 BAS16HT1 A6 marking diode
Text: BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com 1 CATHODE 2 ANODE Maximum ratings are those values beyond which device damage can occur.
|
Original
|
BAS16HT1
BAS16HT1/D
BAS16HT1G
marking 25 SOD-323
marking code onsemi Diode A6
BAS16HT1
A6 marking diode
|
PDF
|
BAS16XV2T1
Abstract: BAS16XV2T1G A6 marking diode
Text: BAS16XV2T1 Preferred Device Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit
|
Original
|
BAS16XV2T1
OD-523
BAS16XV2T1/D
BAS16XV2T1
BAS16XV2T1G
A6 marking diode
|
PDF
|
BAV99WT1G
Abstract: BAV99LT1 BAV99RWT1 BAV99RWT1G BAV99WT1
Text: BAV99WT1, BAV99RWT1 Preferred Devices Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features • Pb−Free Packages are Available http://onsemi.com Suggested Applications • • • • • ANODE 1 ESD Protection
|
Original
|
BAV99WT1,
BAV99RWT1
BAV99WT1
BAV99LT1.
BAV99WT1
SC-70
20for
BAV99WT1/D
BAV99WT1G
BAV99LT1
BAV99RWT1
BAV99RWT1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current
|
Original
|
BAS16LT1
BAS16LT1/D
|
PDF
|
|
|
BAS16LT1
Abstract: A6 SOT-23
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge
|
Original
|
BAS16LT1/D
BAS16LT1
BAS16LT1/D*
BAS16LT1
A6 SOT-23
|
PDF
|
BAV99LT1-D
Abstract: BAV99LT1
Text: MOTOROLA Order this document by BAV99LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR
|
Original
|
BAV99LT1/D
BAV99LT1
236AB)
BAV99LT1/D*
BAV99LT1-D
BAV99LT1
|
PDF
|
BAV99LT1
Abstract: BAV99RWT1 BAV99WT1 SC MOTOROLA
Text: MOTOROLA Order this document by BAV99WT1/D SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications 3 • ESD Protection
|
Original
|
BAV99WT1/D
BAV99WT1
BAV99RWT1
SC-70/SOT-323
BAV99WT1
BAV99LT1.
BAV99WT1/D*
BAV99LT1
BAV99RWT1
SC MOTOROLA
|
PDF
|
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
|
Original
|
BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
|
PDF
|
BUL45D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient
|
Original
|
BUL45D2/D
BUL45D2
BUL45D2
BUL45D2/D*
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
|
PDF
|
c 458 c transistor
Abstract: 100 Amp current 1300 volt diode BUD44D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by BUD44D2/D SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient
|
Original
|
BUD44D2/D
BUD44D2
BUD44D2
BUD44D2/D*
c 458 c transistor
100 Amp current 1300 volt diode
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAS16LT1 3 0 CATHODE ^ 0 1 ANODE M o to r o la P re fe rre d D e v ic e MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 Vdc if 200 m Adc 'FM fsurge 500 mAdc Symbol Max
|
OCR Scan
|
BAS16LT1/D
BAS16LT1
|
PDF
|
TRF marking sot23
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 o \4 CATHODE o 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Unit Vr 75 Vdc if 200 mAdc ¡FMfsurge 500 mAdc Symbol
|
OCR Scan
|
BAS16LT1/D
BAS16LT1
TRF marking sot23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV99WT1/D SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 S C -70/S O T-323 Dual Series Sw itching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection
|
OCR Scan
|
BAV99WT1/D
-70/S
T-323
BAV99WT1
BAV99LT1.
BAV99RWT1
2PHX34756F-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max
|
OCR Scan
|
BAS16LT1/D
BAS16LT1
-------------------------------BAS16LT1/D
|
PDF
|
