Untitled
Abstract: No abstract text available
Text: TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly
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TPD1053F
TPD1053F
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D1285
Abstract: binding post
Text: Pomona Model 1285 Phone Plug Adapter With Binding Posts FEATURES: • verts Standard Phone Jacks to Double Binding Posts. • Banana Plugs can be stacked vertically or horizontally. • Wires, spade lugs and pin tip plugs can be attached by means of the insulated knurl thumb knob.
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\Release\DataSheets\FlukeDataSheet\d1285
D1285
binding post
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Untitled
Abstract: No abstract text available
Text: Product Number: 855-22-006-30-001101 Description: Interconnect Header Spring-Loaded Header Vertical Mount Double Row Surface Mount Plating Code: 22 Shell Plating: 20 " Gold over 100 μ" Nickel Packaging: Packaged in Tubes # Of Pins Mill-Max Part Number
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C36000)
C/885
2002/95Annex
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CHN 550
Abstract: No abstract text available
Text: VSP1900 SLES062 – MARCH 2003 CCD VERTICAL DRIVER FOR DIGITAL CAMERAS FEATURES D CCD Vertical Driver: – Three Field CCD Support – Two Field CCD Support D Output Drivers: – 3 Levels Driver V-Transfer x 5 – 2 Levels Driver (V-Transfer) x 3 – 2 Levels Driver (E-Shutter) x 1
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VSP1900
SLES062
VSP1900
CHN 550
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR770DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si3453DV
11-Mar-11
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sir882a
Abstract: No abstract text available
Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR882ADP
11-Mar-11
sir882a
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S12-1319
Abstract: No abstract text available
Text: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7820DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S12-1319
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Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ790DT
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si1012CR
11-Mar-11
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10GWJ2CZ
Abstract: 10GWJ2CZ47C 10MWJ2CZ47
Text: SCHOTTKY BARRIER TYPE RECTIFIER STACK 10GWJ2CZ47C 10 J,M WJ2CZ47 Unit in mm SW ITCHING TY P E POW ER SU PPLY APPLICATIO N . CO M VERTER & CHOPPER APPLICATIO N . - 10.3 MAX • • • 03.2 ±0-2 Repetitive Peak Reverse Voltage : V r r m = 40, 60, 90V
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10GWJ2CZ47C
WJ2CZ47
10JWJ2CZ47
10MWJ2CZ47
J2CZ47)
10GWJ2CZ47C)
10GWJ2CZ
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HC4049A
Abstract: 4049A TC74HC4050A 4049B
Text: TC74HC4049AP/AF/AFIM TC74HC4050AP/AF/AFIM TC74HC4049 AP/ AF/AFN TC74HC4050AP/AF/AFN HEX BUFFER CO N V E R TE R IN V E R T IN G HEX BUFFER CON VERTER The TC74HC4049A an d TC74HC4050A a re high speed CMOS H EX B U FFE R S fa b ric a ted w ith silicon gate
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TC74HC4049AP/AF/AFIM
TC74HC4050AP/AF/AFIM
TC74HC4049
TC74HC4050AP/AF/AFN
TC74HC4049A
TC74HC4050A
HC4050A
HC4049A)
HC405
HC4049A
4049A
4049B
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toshiba 2505 dd
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1028AS
TPD1028AS
toshiba 2505 dd
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Untitled
Abstract: No abstract text available
Text: TC7SU04FJC7SU04FU VERTER The TC7SU 04 is a high speed C^MOS IN VERTER fabricated w ith silicon gate C2MOS technology. It achieves high speed operation sim ilar to equivalent LSTTL w h ile m aintainin g the C2MOS low pow er dissipation. The internal circuit is com posed o f sin gle stages verter,
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TC7SU04FJC7SU04FU
TC7SU04
TC74H
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Untitled
Abstract: No abstract text available
Text: SM/SMJ34061 VIDEO SYSTEM CONTROLLER JULY 1 98 7 • Generates User-Programmable Control Signals Horizontal Sync, Vertical Sync, and Blanking Which Support a Broad Range of Raster-Scan Display Systems with Varying Resolutions and Scan Rates S M J 3 4 0 6 1 G B . . . 68-P IN PGA
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SM/SMJ34061
SMJ4161
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2SC3296
Abstract: IC vertical lg
Text: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC
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2SC3296
2SA1304.
500mA
500mA,
2SC3296
IC vertical lg
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TPD1035F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1035F LOW-SIDE POWER SWITCH FOR MOTOR, SOLENOID, AND LAMP DRIVERS TPD1035F is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly
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TPD1035F
TPD1035F
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2SC5172
Abstract: No abstract text available
Text: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A
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2SC5172
2SC5172
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2Sc2073
Abstract: 2Sa940 2-10a1a
Text: 2 S C 2 0 7 3 SILICQNNPN triple pffusedtype pcj process Unit in mm PO W ER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 SlO< M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2073
2SA940
O-220AB
SC-46
2-10A1A
eigh140
500mA
500mA,
500mA
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T0T7250
Abstract: hoya Filter ND 0.3
Text: TCD5311BD GENERAL TCD5311BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 681 horizontal x 582 (vertical), and its image size agrees with 1/2 inch type optical system. This device offers high sensitivity and high resolution,
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TCD5311BD
TCD5311BD
TCH725Q
T0T7250
hoya Filter ND 0.3
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Untitled
Abstract: No abstract text available
Text: Electronics Standard Edge II Card Edge Connectors Solder Type Board-to-Board Connectors .100 [2.54] Centerline Vertical Solder Posts, Retention Feature, Without Mounting Ears M a te ria l and F in is h : .064 [1.63] Sq. X .130 [3.301 Dp. — Intercontact Key Slot
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H ex S ch m itt In verte r The MC74VHCT14A is an advanced high speed CMOS Schmitt verter fabricated with silicon gate C M O S technology. It achieves high speed operation sim ilar to equivalent Bipolar S chottky TTL w hile m aintaining
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MC74VHCT14A
MC74VHCT04A,
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