Untitled
Abstract: No abstract text available
Text: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)
|
Original
|
PDF
|
2SD2537
SC-62)
OT-89>
500mA/10mA)
R1102A
|
2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
100mV
2SD2144S
SC-72
T146
|
2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Units : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
|
2SD2144S
Abstract: No abstract text available
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
|
2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
|
Original
|
PDF
|
2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
SC-72
T146
|
KTD1304
Abstract: VEBO-12V
Text: SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . E B L L ᴌHigh Reverse hFE ᴌLow on Resistance : RON=0.6ή(Max.) (IB=1mA). H 1 P Collector-Base Voltage
|
Original
|
PDF
|
KTD1304
KTD1304
VEBO-12V
|
QST8
Abstract: No abstract text available
Text: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO
|
Original
|
PDF
|
-200mV
-500mA
-25mA
QST8
|
2SD2537
Abstract: No abstract text available
Text: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zExternal dimensions (Unit : mm) 2SD2537 4.0 1.5
|
Original
|
PDF
|
2SD2537
500mA/10mA)
100ms
SC-62
2SD2537
|
Untitled
Abstract: No abstract text available
Text: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) zExternal dimensions (Unit : mm) 2SD2537 4.0 1.5
|
Original
|
PDF
|
2SD2537
500mA/10mA)
100ms
SC-62
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
|
Original
|
PDF
|
L2SD2114KVLT1G
500mA
236AB)
OT-23
|
Untitled
Abstract: No abstract text available
Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)
|
Original
|
PDF
|
2SD2114K
500mA
SC-59
R1120A
|
Untitled
Abstract: No abstract text available
Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) Dimensions (Unit : mm)
|
Original
|
PDF
|
2SD2114K
500mA
SC-59
R1120A
|
2SD2537
Abstract: T100
Text: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.5
|
Original
|
PDF
|
2SD2537
500mA/10mA)
SC-62
2SD2537
T100
|
Untitled
Abstract: No abstract text available
Text: High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K Dimensions (Unit : mm) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
|
Original
|
PDF
|
2SD2114K
500mA
SC-59
R1120A
|
|
|
2SD2537
Abstract: T100 VEBO-12V
Text: 2SD2537 Transistors Medium Power Transistor 25V, 1.2A 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.5
|
Original
|
PDF
|
2SD2537
500mA/10mA)
SC-62
500mA/10mA
-50mA,
100MHz
2SD2537
T100
VEBO-12V
|
QST8
Abstract: No abstract text available
Text: QST8 Transistors General purpose amplification −12V, −1.5A QST8 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO
|
Original
|
PDF
|
-200mV
-500mA
-25mA
QST8
|
Untitled
Abstract: No abstract text available
Text: QST8 Transistors General purpose amplification −12V, −1.5A QST8 External dimensions (Unit : mm) Application Low frequency amplifier Driver 2.8 Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO
|
Original
|
PDF
|
200mV
500mA
|
TO-92M
Abstract: KTD1303
Text: SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . A ᴌHigh Reverse hFE O F : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).
|
Original
|
PDF
|
KTD1303
TO-92M
KTD1303
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTD1302 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B C ᴌHigh Emitter-Base Voltage : VEBO=12V Min. . A ᴌHigh Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).
|
Original
|
PDF
|
KTD1302
|
L2SD2114KVLT1
Abstract: L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1 zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 3
|
Original
|
PDF
|
L2SD2114K
500mA
236AB)
OT-23
L2SD2114KVLT1
L2SD2114KVLT1G
L2SD2114KWLT1
L2SD2114KWLT1G
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.)
|
Original
|
PDF
|
L2SD2114KVLT1G
S-L2SD2114KVLT1G
500mA
236AB)
AEC-Q101
S-L2SD2114KVLT1G
OT-23
|
ktd1303
Abstract: No abstract text available
Text: SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B ・High Emitter-Base Voltage : VEBO=12V Min. . A ・High Reverse hFE O F : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ・Low on Resistance :RON=0.6Ω(Typ.) (IB=1mA).
|
Original
|
PDF
|
KTD1303
100mA,
O-92M
ktd1303
|
7826 Transistor
Abstract: marking code Sk transistors
Text: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)
|
OCR Scan
|
PDF
|
2SD2114K
SC-59)
2SD2114K;
2SD2114K
7826 Transistor
marking code Sk transistors
|
2SC4536
Abstract: 2SC454 2SC4568 T74100
Text: h:7 « S ±S ’ . S § m • 2 S C 4 5 3 6 : -7-i 5 afäimmVIWiHSo MiimvmtcMMv m i n * «Ä B l! Vceo (V 15 CATV"? Vebo (V) 3 Ic(mA) 250 Pt (W>* 2 T j (°C) 150 * « u s w 0 2 S C 4 5 3 7 S SL d i S : VHF/UHF ß v f i g i f t a M SHF Vceo (V) 11 Vebo (V)
|
OCR Scan
|
PDF
|
2SC4536
105dB//V,
190MHz,
105dB
200MHz
900MHz
2SC4569
2SC4536
2SC454
2SC4568
T74100
|
