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    VCE 1200 AND 5 AMPS TRANSISTOR Search Results

    VCE 1200 AND 5 AMPS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    VCE 1200 AND 5 AMPS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FZT653

    Abstract: FZT753 DSA003712
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 0.4 0.3 B 175 VCE=2V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT653 FZT753 FZT653 FZT753 DSA003712

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT653 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage 0.6 C COMPLEMENTARY TYPE – FZT753 PARTMARKING DETAIL – FZT653 E 0.5 225 0.4 C IC/IB=10 B 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT653 FZT753 IC/10 100ms

    221D

    Abstract: MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373
    Text: MOTOROLA Order this document by MJE18206/D SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES


    Original     		PDF MJE18206/D MJE18206 MJF18206 MJE/MJF18206 MJE18206/D* 221D MJE18206 MJE210 MJF18206 MPF930 MTP12N10 MTP8P10 MUR105 k 373

    ztx653

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT


    Original     		PDF ZTX652 ZTX653 IC/10 100ms ztx653

    FZT649

    Abstract: FZT749 transistor FZT749
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749


    Original     		PDF OT223 FZT749 IC/10 FZT649 -500mA, -50mA -100mA, 100MHz FZT649 FZT749 transistor FZT749

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		PDF MGW12N120D/D MGW12N120D MGW12N120D

    MGW12N120D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247


    Original     		PDF MGW12N120D/D MGW12N120D MGW12N120D

    equivalent FZT651

    Abstract: FZT651 FZT751 DSA003712
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage TYPICAL CHARACTERISTICS 0.6 C 0.5 225 0.3 VCE=2V ABSOLUTE MAXIMUM RATINGS. V 75 0.0001


    Original     		PDF OT223 FZT651 FZT751 500mA, equivalent FZT651 FZT651 FZT751 DSA003712

    transistor d 1557

    Abstract: MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 MGW12N120/D* TransistorMGW12N120/D transistor d 1557 MGW12N120

    MJE 280 power transistor

    Abstract: 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES


    Original     		PDF MJE18204/D MJE18204 MJF18204 MJE/MJF18204 MJE18204/D* MJE 280 power transistor 100 Amp current 1300 volt diode 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105

    221D

    Abstract: MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18204/D SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES


    Original     		PDF MJE18204/D MJE18204 MJF18204 MJE/MJF18204 MJE18204/D* 221D MJE18204 MJE210 MJF18204 MPF930 MTP12N10 MTP8P10 MUR105

    FZT753

    Abstract: FZT653 DSA003715
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT753 TYPICAL CHARACTERISTICS 0.6 td Switching time - Volts 0.4 I+ /I*=10 V 0.3 0.2 tf ts ns ns 140 E COMPLEMENTARY TYPE – 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0.0001 0.001 0.01 0.1 1 PARTMARKING DETAIL –


    Original     		PDF OT223 FZT753 FZT653 FZT753 FZT653 DSA003715

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600


    Original     		PDF OT223 IC/10 FZT649 FZT749 100ms

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJE18206 MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art


    Original     		PDF MJE/MJF18206 MJE18206 MJF18206 r14525 MJE18206/D

    mgy20n120d

    Abstract: IGBT 250 amp
    Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		PDF MGY20N120D/D MGY20N120D mgy20n120d IGBT 250 amp

    MJE 5740

    Abstract: 221D MJE18204 MJF18204 MPF930 MTP8P10 MUR105 tc5003
    Text: ON Semiconductort MJE18204 MJF18204 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art


    Original     		PDF MJE18204 MJF18204 MJE/MJF18204 r14525 MJE18204/D MJE 5740 221D MJE18204 MJF18204 MPF930 MTP8P10 MUR105 tc5003

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage 1.8 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C


    Original     		PDF OT223 FZT788B FZT688B 100ms

    transistor motorola 236

    Abstract: MGY25N120
    Text: MOTOROLA Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGY25N120/D MGY25N120 MGY25N120/D* transistor motorola 236 MGY25N120

    motorola 039 31

    Abstract: 039 E 31 motorola MGW12N120
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW12N120 Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 IGBTMGW12N120/D motorola 039 31 039 E 31 motorola MGW12N120

    MGW20N120

    Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
    Text: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW20N120/D MGW20N120 MGW20N120/D* TransistorMGW20N120/D MGW20N120 transistor d 1557 305 Power Mosfet MOTOROLA

    340G-02

    Abstract: MGY20N120D
    Text: MOTOROLA Order this document by MGY20N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264


    Original     		PDF MGY20N120D/D MGY20N120D 340G-02 MGY20N120D

    motorola 039 31

    Abstract: MGW12N120 MGW12N
    Text: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    Original     		PDF MGW12N120/D MGW12N120 motorola 039 31 MGW12N120 MGW12N

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS FZT651 ISSUE 2 – FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage 0.6 C 0.5 225 0.4 E COMPLEMENTARY TYPE – FZT751 IC/IB=10 C 175 0.3 VCE=2V 0.2 0.1 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF OT223 FZT651 FZT751 IC/10

    Untitled

    Abstract: No abstract text available
    Text: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts


    OCR Scan     		PDF 1DI50H-055 1DI50K-055 1DI75E-055 1DI50F 1DI50H-120 1DI75F 1I3I75H 0Q0372L,