Untitled
Abstract: No abstract text available
Text: 5LE D BQBGbG^ D D O i n O IbS IVCT VTA-C50 .050" NPN Photodarlington Chip E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTA-C50
2850K)
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Untitled
Abstract: No abstract text available
Text: 5bE J> m 30301, 0^ 0001502 70? GaAs Infrared Emitting Diodes VTE-C11 11 mil Chip — 940 nm E 6 & G »VCT VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C11
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Vactec
Abstract: VTT-C40 phototransistor peak 550 nm Vactec 25
Text: S bE D • 3Q3ÜLÜT 0001174 T12 M V C T .040" NPN Phototransistor Chip .*“' ^ ‘7 VTT-C40 E G & G VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C40
Vactec
VTT-C40
phototransistor peak 550 nm
Vactec 25
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Photodiode vactec
Abstract: S1723-04 "CT scan" VTH209XDS QQQ112M VTH2090 VTH2091
Text: 3D3übüT SbE ÜG Ü1 1 23 IVCT SSG J^EG&G VACTEC T ^ l- 5 3 VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE VTH2090, 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT E G & G VACTEC -PRODUCT DESCRIPTIO N This PIN photodiode consists of a chip with a
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VTH209XDS
VTH2090,
S1723-04,
Photodiode vactec
S1723-04
"CT scan"
QQQ112M
VTH2090
VTH2091
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Untitled
Abstract: No abstract text available
Text: BDBObD'i O OO llö b 734 • V C T SbE D VTT-C60 .060* NPN Phototransistor Chip E GIG DESCRIPTION T - 4 1-^-7 VACTEC CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTT-C60
30bCH
2850K)
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VTT-C50
Abstract: Vactec
Text: .S b E D BDaObO^ OOOllflD .050" NPN Phototransistor Chip 21b HI V C T VTT-C50 E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
2S50K)
VTT-C50
Vactec
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vactrol
Abstract: vactec vactrol vtl1a3 VTL1A3 vactec vactrol vtl1b5 Photoresistor neon lamp 220 volt VTL1A4 VTL186 lem HA
Text: ¡3 “ is Material FI HERMETIC SEALED VACTROL 2° C l VACTEC Copyrighted VACTEC P i Bulletin VTL-1 By Its Respective M A X IM U M RATINGS lOOmW — derate 2mW/’ C above 25°C case temperature — 55*C to -f- 70“C operating and storage Case temperature 4
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Untitled
Abstract: No abstract text available
Text: SbE ]> 3 D 3 D b O c] 0Q0111S «VCT VTP8C03DS R bv . A PHOTODIODE ARRAY 8 ELEM ENT J ^ E G zO VACTEC VTP8C03 O P T O E L E C T R O N IC S E G & G VACTEC T-^I-55 FEATURES PRODUCT DESCRIPTIO N • 8 Element array • Common cathode • Symmetrically arranged bond pads
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0Q0111S
VTP8C03DS
VTP8C03
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Untitled
Abstract: No abstract text available
Text: 5bE » • a Q a Q b O T Q0Q1214 4E=J ■ V C T GaAIAs Infrared Emitting Diodes VTE-C15AL 15 mil Chip — 880 nm _ E G & G VACTEC DESCRIPTIO N PACKAGE D IM EN SIO N S Inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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Q0Q1214
VTE-C15AL
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diode.18
Abstract: VTE-C18AL Vactec
Text: ShE D • 3Q30bQ^ D0Ü1E15 3 bS GaAIAs Infrared Emitting Diodes VTE-C18AL 18 mil Chip — 880 nm r E G 8« G HVCT -m -iS VACTEC DESCRIPTION PAC K AG E DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C18AL
diode.18
VTE-C18AL
Vactec
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diode.18
Abstract: Vactec 25 Vactec VTE-C18
Text: 5LE D • 3 D 3 0 b Q cl □ □ □ 1 2 0 3 b43 H V C T GaAs Infrared Emitting Diodes VTE-C18 18 mil Chip — 940 nm T-si-n E G & G VACTEC DESCRIPTION PACKAGE DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3D30b0cl
00012D3
VTE-C18
diode.18
Vactec 25
Vactec
VTE-C18
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Vactec
Abstract: VTE-C11
Text: 5bE D • 3 D 3 D b O c1 0a012D2 7 0 ? « V C T G aAs Infrared Emitting Diodes I^ VTE-C11 11 mil Chip — 940 nm E G & G VACTEC D E S C R IP T IO N P A C K A G E D IM E N S IO N S EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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012D2
VTE-C11
Vactec
VTE-C11
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vactec vactrol
Abstract: VTL1B6 neon vactrol
Text: FI VACTEC HERMETIC SEALED VACTROL. C l Ch VACTEC Bulletin V TL-1 1— 3 P H O TO CE LL 2 — 4 LIQ H T S O U R C E M A X I M U M R A T IN G S lO Om W — derate 2mW/*C above 25°C case tem perature Case tem perature 4 — 55*C to -f- 70*C operating and storage
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Vactec photocell
Abstract: VTL9A10 VTL9A9
Text: □Bi Fl Q > fi VACTEC vactec GENERAL PURPOSE VACTROLS Bulletin VTL 9 D IM EN SIO N D R A W IN G S V T L 9 Series B o tto m V ie w M A XIM U M RATINGS M a x im u m case d is s ip a tio n 5 4 0 0 m W — derate 1 0 m W / *C ab o ve 35*C — case M a x im u m cell p o w e r
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3D30b0q
QQQD701
Vactec photocell
VTL9A10
VTL9A9
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VTP413
Abstract: No abstract text available
Text: Sb E D BDBDbD^ OOOlGbH HVCT VTP Process Photodiodes VTP413 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible
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VTP413
T-41-51
Temperatu75
2x1013
VTP413
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VTT0842
Abstract: VTT0843 VTT0844
Text: Sb E J> 3D3GbGT G0G117b fl'iS .040" NPN Phototransistors Low Cost Hermetic TO-18 Lensed Pkg IVCT VTT0842, 43, 44 "TM -I-Coi - 1 E G & G VACTEC i PACKAGE DIMENSIONS inch mm •SO (12.7) .206 (5.23) CASE53A PRODUCT DESCRIPTION TO-18 HERMETIC (LENSED)
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aOD117b
VTT0842,
CASE53A
50/IA
VTT0842
VTT0843
VTT0844
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Untitled
Abstract: No abstract text available
Text: 5bE P BQBDbD'í ÜOOlOñfl bEb • VCT VTS-1 Process Photodiodes VTS E 6 & 6 VACTEC PRODUCT DESCRIPTION PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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303DbD
100mW/cm2
100fc,
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VTP2090
Abstract: No abstract text available
Text: Sb E D aoaDbOT Q0G1071 322 «IVCT VTP2090 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm •39 (10 0 ) NOM. .60 ( 15.2 ) .0 1 6 ( 0. 40) ;/ '/ . .$ ./ ; .66 (16 .8 ) / ,A , - NOTCH DENOTES ANODE PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC
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G0G1071
VTP2090
T-41-51
0x1013
VTP2090
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Untitled
Abstract: No abstract text available
Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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T-41-51
100fc,
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Untitled
Abstract: No abstract text available
Text: SbE ]> • BDaObO'i GDDllGS 535 IVCT VTS7080A |~VTS-2 Process Photodiodes T-41-51 E G 8, G VACTEC PACKAGE DIMENSIONS inch mm ( 20.831 .820 PRODUCT DESCRIPTION CASE 16 Large area silicon photodiode mounted in a two lead 1.25" diameter hermetic package. Cathode is common to the
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VTS7080A
T-41-51
100/iW
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VTP413
Abstract: S 76 infrared k75m
Text: 5bE D BDBDbO" □ □□lübl4 n e VTP Process Photodiodes • VCT VTP413 E 6 & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm) PRODUCT DESCRIPTION CASE 51 Planar silicon photodiode in a molded large lensed, sidelooker package. The dark package material filters out visible
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VTP413
T-41-51
2x1013
VTP413
S 76 infrared
k75m
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UV led 200 nm peak
Abstract: uv led 365 VTB5050UVJ VTB5051UVJ
Text: £fc E D 30301,0^ 0001Q44 VTB Process Photodiodes IVCT 3T4 VTB5050UVJ, 1UVJ E G & G VACTEC PACKAGE DIMENSIONS neh (mm) PRODUCT DESCRIPTION CASE U A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planarsilicon photodiode in athree lead TO-5 package with a UV transmitting
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3030bCH
0001Q44
VTB5050UVJ,
VTB5050UVJ
VTB5051UVJ
x1012
8x1013
UV led 200 nm peak
uv led 365
VTB5050UVJ
VTB5051UVJ
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Untitled
Abstract: No abstract text available
Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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T-41-51
100fc,
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K 872
Abstract: cm2 5612 cm218
Text: SbE D BDBDbOq OQDloqti VTS-1 Process Photodiodes E G & G MVCT VTS VACTEC PRODUCT DESCRIPTION T-41-51 PACKAGE DIMENSIONS inch mm Three cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resis
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T-41-51
2B50K
100fc,
K 872
cm2 5612
cm218
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