VTT-C50
Abstract: Vactec
Text: .S b E D BDaObO^ OOOllflD .050" NPN Phototransistor Chip 21b HI V C T VTT-C50 E G & 6 VACTEC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
2S50K)
VTT-C50
Vactec
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Untitled
Abstract: No abstract text available
Text: SbE D BDBQbO^ ÜÜOllflO 21b H V C T VTT-C50 .050" NPN Phototransistor Chip [ fi ì fi VACT EC DESCRIPTION CHIP DIMENSIONS inch mm EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are nitride passivated to ensure long term
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VTT-C50
T-41-47
2850K)
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VTT3122E
Abstract: VTT3121E VTT3123E
Text: 5bE D • 3030^0^ 0001171 .025" NPN Phototransistors 50 3 H V C T VTT31 21 E, 2E, 3E Hermetic Coax Package w/ Emitter Lead E G & G VACTEC T—41—67 PACKAGE DIMENSIONS inch mm CASE 5 COAX HERMETIC (WITH CASE LEAD) CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS H
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3Q30bÃ
VTT31
T-41-61
VTE31xx
4001c
VTT3121E
VTT3122E
VTT3123E
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Untitled
Abstract: No abstract text available
Text: 5bE D • 3D3DbDR DGOIOTS fibb VTS VTS-1 Process Photodiodes E HVCT 64, G & & VACTEC PRODUCT DESCRIPTION 65 T-41-51 PACKAGE DIMENSIONS inch mm Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode.
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T-41-51
100mW/cm2
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Untitled
Abstract: No abstract text available
Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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T-41-51
100fc,
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Untitled
Abstract: No abstract text available
Text: 5bE ]> 3 D 3 0 b m OOOIQ?1* D31 « V C T VTP4085, 5H, 5S VTP Process Photodiodes E 6 & G VACTEC T-4 1-5 1 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub
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VTP4085,
VTP40I5H
VTP4015
VTP4015S
100/jW/cm2,
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Untitled
Abstract: No abstract text available
Text: SbE D aDaobDT ooGiiaa so? .060" NPN Phototransistors VTT1031, 32, 33 TO-46 Flat Window Package _ mvct - F -4 1 -G f E G & G VACTEC PACKAGE DIMENSIONS inch mm SO (1 2 .7 ) .1 5 4 (3 .9 1 ) , • No“ - - ‘ .1 7 8 (4 .5 2 ) .215 .205 (0 .5 1 ) C ASE 2
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VTT1031,
VTT1031
VTT1032
VTT1033
400fc
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VTP8440
Abstract: VTP8441
Text: SbE ]> • BOBGbG^ DGOlOfll 271 « V C T V T P 8 4 4 0 , 8441 VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 21 P la n a r s ilic o n photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear
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VTP8440,
T-41-51
1001c,
8x1012
VTP8440
VTP8441
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Untitled
Abstract: No abstract text available
Text: SbE D • BQBQbO'i 5b2 H V C T VTS VTS-1 Process Photodiodes E G & G VACTEC PRODUCT DESCRIPTION T -41-51 PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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T-41-51
100fc,
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Untitled
Abstract: No abstract text available
Text: .060" NPN Phototransistors VTT1131, 3 2 , 33 TO-46 Lensed Package E G & G VACTEC T -4 Î-6 1 PACKAGE D IM EN SIO N S inch mm .206 (5 .2 3 ) •50 ( 12.7 ) 205 ( 5 .21) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: SOT ABSOLUTE M AXIMUM RATINGS fl PRODUCT DESCRIPTION
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VTT1131,
VTT1131
VTT1132
VTT1133
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Untitled
Abstract: No abstract text available
Text: SLE D • 3Q30t.0S QQ 01 0 5E 470 H V C T V TB 8443, 8444 [vTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21 PRODUCT DESCRIPTION P la n a r s ilico n photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy.
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3Q30t
T-41-51
x1012
VTB8444
VTB8443
x1013
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Untitled
Abstract: No abstract text available
Text: SbE 3G3üb[n D GGD11GÔ VTS-3 Process Photodiodes E 244 «VCT VTS_ 70, 72, 75 G & G VACTEC PRODUCT DESCRIPTION r-90-oi PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have excellent response in the UV
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GGD11GÃ
r-90-oi
40/jW/cm2,
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Vactec
Abstract: No abstract text available
Text: 5b E D • aoaobm ooo im o VTS-1 Process Photodiodes 204 m v c t VTS 1 4, 18 £ 6 & G VACTEC PRODUCT DESCRIPTION PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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303DbD'
T-41-51
Vactec
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photodiode ge
Abstract: VTP4085
Text: 5bE a o a O b O 1! D 0 Ü1 G7 4 Ü31 • VCT J> VTP Process Photodiodes V T P4 085 , 5H, 5S E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .032 in2 (21 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub
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D0D1Q74
VTP4085,
T-41-51
vtp40i5
vtp4085s
1001c,
photodiode ge
VTP4085
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k 2134
Abstract: Vactec 4202 BD "1050 nm"
Text: 5 Li E D m BDBDEsQR O G OI O^S ôbb VTS VTS-1 Process Photodiodes E G & G «VCT 64, VACTEC 65 T -4 1 -5 1 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Five cell arrays of large area planar silicon photodiodes primarily intended for use in the photovoltaic mode.
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T-41-51
k 2134
Vactec
4202 BD
"1050 nm"
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Untitled
Abstract: No abstract text available
Text: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack age incorporates an infrared rejection
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VTB8443B
TCIs420
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100 VTB 307
Abstract: VTB 307 VTB8440B VTB8441B VTB8442B
Text: SbE ]> , ^ 00 010 53 30301 0 307 I VCT VTB8440B. VTB Process Photodiodes T-41-51 E G & G VACTEC PA C K A G E DIMENSIONS inch mm CASE 21F PRO D UCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack age incorporates an infrared rejection
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VTB8440B.
T-41-51
x1012
8x1013
100 VTB 307
VTB 307
VTB8440B
VTB8441B
VTB8442B
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Untitled
Abstract: No abstract text available
Text: 5bE D m 3G3Gb[n QQOIOTQ 2fl4 H V C T VTS-1 Process Photodiodes 1 4 , _ 18 VTS £ 6 & G VACTEC PRODUCT DESCRIPTION PACKAGE D IM EN SIO N S inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have low series resistance, moderate
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31Typ.
100mW/cm2
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Untitled
Abstract: No abstract text available
Text: 5bE D 3 0 3 0 t i G ci □□□1104 VTS-2 Process Photodiodes E 6 & G • VCT VTS 94, 95, 96 T-41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiodes suitable for use in the photovoltaic mode, but may be used with a small
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303GtiGcÃ
T-41-51
SERIE890
1001c,
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Untitled
Abstract: No abstract text available
Text: 5bE D 3 03 0^0 =5 00D1D53 IVCT 307 V T B 8 4 4 0 B , 1B, 2B VTB Process Photodiodes T -4 1 -5 1 E G & G VACTEC PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack age incorporates an infrared rejection
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00D1D53
VTB8442B
VTB8441B
VTB8440B
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Untitled
Abstract: No abstract text available
Text: IVCT SbE D VTT7122, 23, 25 .025" NPN Phototransistors Molded Lensed Lateral Package T—41—61 £ G & G VACTEC PACKAGE DIMENSIONS inch mm .0 5 5 ( 1 . 40 ) .70 (1 7 .8 ) .0 45 (1 .1 4 ) MINIMUM .0 28 (0 .7 1 ) MAX. Ì .1 80 (4 .5 7) .1 70 (4 .3 2) .100
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VTT7122,
400fc
VTT7122
VTT7123
VTT7125
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VTB8443B
Abstract: 8444B VTB8444B
Text: SbE D B O B Ü b C H G Ü D I O S H 243 • VCT VTB Process Photodiodes VTB8443B, 8444B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a
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VTB8443B,
8444B
T-41-51
VTB8443B
VTB8444B
9x1012
8x1013
VTB8443B
8444B
VTB8444B
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31AA
Abstract: CLD31 VTD32 VTD32AA
Text: 5bE D 3D30b0^ GOOllSD AMI B V C T VTD32, V T D 3 2 A A VTP Process Photodiodes C L D 3 1 . 3 1 A A L A R G E C H I P I N D U S T R Y EQUIV. E G & G VACTEC T-41-5 1 PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .033 in2 (21.2 mm2)
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3Q30b
VTD32,
VTD32AA
CLD31.
T-41-51
VTD32
1001c,
31AA
CLD31
VTD32
VTD32AA
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VTB8440
Abstract: VTB8441 VTBB442 V 14 K 320
Text: SbE ]> • BDBDbQ^ 0001051 IVCT S34 VTB Process Photodiodes V T B 8 4 4 0 , 41, 4 2 E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm C A S E 21 8 mm C ER A M IC CHIP ACTIVE AREA: .008 In2 (5.16 mm2) PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a
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VTB8440,
T-41-51
VTB8440
VTB8441
VTBB442
1001c,
7x1013
x1013
VTB8440
VTB8441
VTBB442
V 14 K 320
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