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    Vishay Semiconductors V60H150PW-M3-4W

    DIODE ARR SCHOTT 150V 30A TO3PW
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    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW-M3 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V60H150PW-M3

    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 V60H150PW-M3

    V60H150PW-M3

    Abstract: No abstract text available
    Text: V60H150PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60H150PW 22-B106 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 V60H150PW-M3