UV laser diode 280 nm
Abstract: UVTOP320-HL-TO39 UVTOP265-FW-TO39
Text: ROITHNER LASERTECHNIK GmbH PRESENTS. UV-LEDS, 250 nm . 365 nm UV-LED, series UVTOP, TO-39, unique extreme short UV wavelengths UVTOP255-FW-TO39, 255 nm +/- 5 nm, 20 mA, TO-39, flat window, datasheet UVTOP255-HL-TO39, 255 nm +/- 5 nm, 20 mA, TO-39, hemispherical lens window, datasheet
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UVTOP255-FW-TO39,
UVTOP255-HL-TO39,
UVTOP255-BL-TO39,
UVTOP255-NW-TO39,
UVTOP265-FW-TO39,
UVTOP265-HL-TO39,
UVTOP265-BL-TO39,
UVTOP265-NW-TO39,
2006-March-01
76/DG
UV laser diode 280 nm
UVTOP320-HL-TO39
UVTOP265-FW-TO39
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UV diode 100 nm to 280 nm
Abstract: UV diode 320 nm 1495nm Laser Diode 405 nm 400 mW JDSU pump laser
Text: COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Laser Diode 3400 Series Key Features • Up to 360 mW 1420 to 1465 nm • Up to 340 mW (1466 to 1495 nm) • Up to 320 mW (1496 to 1510 nm) • Grating stabilized • High thermal efficiency • Robust high-power operation (0 to 70°C)
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14-pin
800-5378-JDSU
498-JDSU
5378-JDSU
3400PUMP
UV diode 100 nm to 280 nm
UV diode 320 nm
1495nm
Laser Diode 405 nm 400 mW
JDSU pump laser
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UV diode 100 nm to 280 nm
Abstract: JDSU pump laser SM15 UV diode 200 nm PIN photodiode 420 nm CMPD Laser Diode 405 nm UV diode 320 nm JDSU laser diode UV diode 280 nm
Text: COMMUNICATIONS COMPONENTS 14xx nm, 360 mW Diode Laser 3400 Series Key Features • Up to 360 mW 1420 to 1465 nm • Up to 340 mW (1466 to 1495 nm) • Up to 320 mW (1496 to 1510 nm) • Grating stabilized • High thermal efficiency • Robust high-power operation (0 to 70°C)
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498-JDSU
14-pin
800-5378-JDSU
5378-JDSU
3400PUMP
UV diode 100 nm to 280 nm
JDSU pump laser
SM15
UV diode 200 nm
PIN photodiode 420 nm
CMPD
Laser Diode 405 nm
UV diode 320 nm
JDSU laser diode
UV diode 280 nm
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s34 diode
Abstract: UV diode 320 nm s34 power diode 1480 nm laser diode UV diode 280 nm UV diode 100 nm to 280 nm UV laser diode 280 nm 220-1030 DIODE S34 UV diode 250 nm
Text: OPTICAL COMMUNICATIONS Up to 450mW Fiber Bragg Grating Stabilized 14xx nm Pump Modules S34 Series Key Features • Up to 450 mW 1420 and 1452 nm • Up to 430 mW (1480 nm) • Up to 360 mW (1420 to 1465 nm) • Up to 340 mW (1466 to 1495 nm) • Up to 320 mW (1496 to 1510 nm)
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450mW
GR-468-CORE
498-JDSU
1452NGER
5378-JDSU
S34PUMP
s34 diode
UV diode 320 nm
s34 power diode
1480 nm laser diode
UV diode 280 nm
UV diode 100 nm to 280 nm
UV laser diode 280 nm
220-1030
DIODE S34
UV diode 250 nm
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Untitled
Abstract: No abstract text available
Text: COMMUNICATIONS COMPONENTS 14xx nm, 300 mW Laser Diode 3400 Series Key Features • Up to 320 mW 1420 to 1465 nm • Up to 300 mW (1466 to 1495 nm) • Up to 280 mW (1496 to 1510 nm) • Grating stabilized • High thermal efficiency • Robust high-power operation (0 to 70 °C)
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498-JDSU
14-pin
3400PUMP
5378-JDSU
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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M96S66
Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Text: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9903
M96S66
tsop 3846
ST M27C256B PART MARKING
M27128
M2764A
QRR9903
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25X25
Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Text: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9904
25X25
Marking STMicroelectronics m27c256
QRR9904
ST16
M27C256
M27C320
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JDSU CQF935 DFB
Abstract: uniphase CQF935 CQF935 JDS uniphase CQF935 CQF935/908
Text: Product Bulletin 63 mW 1550 nm CW DFB Lasers with PM Fiber for WDM Applications CQF935/908 Series The JDS Uniphase CQF935/908 series laser is specifically developed for wavelength division multiplexing WDM systems, where it is used in combination with an external modulator,
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CQF935/908
RWR-030-42-03093-WWM,
JDSU CQF935 DFB
uniphase CQF935
CQF935
JDS uniphase CQF935
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QRR0001
Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
Text: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0001
QRR0001
ST16
m29f002
065um
ST M27C256B PART MARKING
FM27c1024
QRR000
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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M25C
Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Text: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR0002
M25C
Marking STMicroelectronics m27c256
QRR0001
QRR0002
ST16
M29W160
M275
M27C512 marking
QRR000
ST M27C256B PART MARKING
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BV-1
Abstract: M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256
Text: QRR9901 QUALITY & RELIABILITY REPORT April 1998 to March 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9901
BV-1
M93C56
M27256
M2764A
QRR9901
Solutions-76
Marking STMicroelectronics m27c256
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RT7237J
Abstract: RT7237 k2720
Text: RT7237J 2A, 18V, 340kHz Synchronous Step-Down Converter General Description Features The RT7237J is a high efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 2A output current from a 4.5V to 18V input supply. The RT7237J's current mode architecture and external
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RT7237J
340kHz
RT7237J
DS7237J-00
RT7237
k2720
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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rt7247
Abstract: RT7247A rt7247al RT7247AH K2762
Text: RT7247A 2A, 18V, 340kHz Synchronous Step-Down Converter General Description Features The RT7247A is a high efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 2A output current from a 4.5V to 18V input supply. The RT7247A's current mode architecture and external
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RT7247A
340kHz
RT7247A
DS7247A-01
rt7247
rt7247al
RT7247AH
K2762
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RT7247AL
Abstract: DS7247A-02
Text: RT7247A 2A, 18V, 340kHz Synchronous Step-Down Converter General Description Features The RT7247A is a high efficiency, monolithic synchronous step-down DC/DC converter that can deliver up to 2A output current from a 4.5V to 18V input supply. The RT7247A's current mode architecture and external
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RT7247A
340kHz
340kHz
RT7247A
DS7247A-02
RT7247AL
DS7247A-02
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RT7248
Abstract: RT72
Text: RT7248 2A, 18V, 340kHz Synchronous Step-Down Converter General Description Features ±1.5% High Accuracy Feedback Voltage Input Voltage Range : 4.5V to 18V 2A Output Current Integrated N-MOSFETs Current Mode Control 340kHz Fixed Frequency Operation Output Adjustable Voltage Range : 0.923V to 15V
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RT7248
340kHz
RT7248
DS7248-01
RT72
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L9657
Abstract: S10604
Text: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium
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SE-17141
52/1A
RU-113054
L9657
S10604
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980NM
Abstract: 980nm laser diode module
Text: Data Sheet 980nm Pump Laser Module, Uncooled LU9*X The Bookham LU9*X 980nm Pump Laser Module is the second generation uncooled pump module providing higher power for highly reliable amplification for metro, cross-connect or other single/multi-channel amplification applications.
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980nm
200mW,
500mW
970nm
21CFR
ISO14001
TL9000
980nm laser diode module
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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IR photodiode sensor
Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is
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16-ELEMENT
S5668
175mm
575mm
46-ELEMENT
C4351
IR photodiode sensor
Photodiode Array linear
C2334
linear array photodiode element
silicon linear photodiode array
photodiode linear array 256
silicon photodiode array
Photodiode Array 2d
Linear Image sensor IC
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Untitled
Abstract: No abstract text available
Text: MLO 36 MMO 36 n I Itw L A Iq o AC Controller Modules |RMS = 39 A V RRM = 12 0 0 -1600 V v RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 MLO Type G1 I MLO 36-12io1 MLO 36-16io1 Test C onditions Ums ^TRMS ^TAVM T = 85°C, 50 - 400 Hz for single controller
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36-12io1
36-16io1
36/MLO
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