Emitter
Abstract: VL380-EMITTER
Text: VL380-EMITTER v 1.0 27.05.2014 Description VL380-EMITTER is a InGaN based, High Power UV single chip LED with a typical peak wavelength of 380 nm and radiation of 200-300 mW. It comes in standard emitter package, containing SI Zener diode for ESD protection, with Au soldering pins, Au plating copper heat sink, and molded with silicone resin.
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VL380-EMITTER
VL380-EMITTER
Emitter
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Emitter
Abstract: VL390-EMITTER
Text: VL390-EMITTER v 1.0 27.05.2014 Description VL390-EMITTER is a InGaN based, High Power UV single chip LED with a typical peak wavelength of 390 nm and radiation of 200-300 mW. It comes in standard emitter package, containing SI Zener diode for ESD protection, with Au soldering pins, Au plating copper heat sink, and molded with silicone resin.
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VL390-EMITTER
VL390-EMITTER
Emitter
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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58Bi-42Sn
Abstract: UV diode 365 nm UV led diode 740nm zener diode color codes UV led 365 nm peak wavelength white LED led uv 460nm LED FLUX UV 400nm UV emitting diode 200 nm
Text: High Efficacy 365nm UV LED Emitter LZ1-00U600 Key Features • High Efficacy 365nm 3W UV LED • Ultra-small foot print – 4.4mm x 4.4mm Surface mount ceramic package with integrated glass lens Very low Thermal Resistance 4.2°C/W Very high Radiant Flux density
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365nm
LZ1-00U600
58Bi-42Sn
UV diode 365 nm
UV led diode
740nm
zener diode color codes
UV led 365 nm peak wavelength
white LED
led uv 460nm
LED FLUX UV 400nm
UV emitting diode 200 nm
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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photodiode ge
Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
Text: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,
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26-Aug-08
photodiode ge
TSAL6200
TSFF5410
TSHA550
TSHF5410
TSUS540
detect radiation
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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Physics and Technology
Abstract: physics pn junction diode structure
Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors
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06-Oct-14
Physics and Technology
physics
pn junction diode structure
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smd diode UJ 64 A
Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.
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RLU4116E,
RLT390-50CMG,
RLT395-50CMG,
RLT400-50CMG,
TH06-1W,
ATU61938489,
AT1212
AT3112
smd diode UJ 64 A
SLD3237VFR
20/SPL1550-10-9-PD
SLD3237VF
smd diode UM 08
smd diode UM
RLCD-M66H-750
RLT905-30G
SLD3236VF
RLT6650GLI
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uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
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BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,
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VMN-MS6520-1012
sensor BPW34 application note
touch sensitive siren using transistor
tsop sensor
Infrared sensor TSOP 1738
vo2223
vo3120
infrared signal transmission distance sensor
BPW34 application note
APPLICATION NOTE BpW34
BP104 application note
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Untitled
Abstract: No abstract text available
Text: 2015 01 Interview PAGE 6 New Applications with the EX-mini Compact Excimer Lamp Light Source OPTO-SEMICONDUCTOR PRODUCTS PAGE 15 Low-noise MPPC for precision measurement ELECTRON TUBE PRODUCTS PAGE 19 Deep UV light source – higher power than LED SYSTEMS PRODUCTS
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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u6 em
Abstract: ph 41 zener diode C 13 PH Zener diode C 12 PH Zener diode LZ1-00UA00 White 3W LED diode
Text: High Efficacy VIOLET LED Emitter LZ1-00UA00 Key Features • High Efficacy 5W VIOLET LED • Ultra-small foot print – 4.4mm x 4.4mm Surface mount ceramic package with integrated glass lens Very low Thermal Resistance 4.2°C/W Electrically neutral thermal path
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LZ1-00UA00
LZ1-00UA00
u6 em
ph 41 zener diode
C 13 PH Zener diode
C 12 PH Zener diode
White 3W LED diode
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Untitled
Abstract: No abstract text available
Text: 389 Robust Photoelectric Sensor RX SERIES FIBER SENSORS Related Information Amplifier Built-in •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide. P.283~
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PT-RX500â
PT-RX1000
CX-400
EX-10
EX-20
EX-30
SUS304)
PT-RX500
C3604)
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BPW21 application note
Abstract: 308-067 uA741 linear photometer 564-037 BPW21 303-674 bpw21 op BPW21 equivalent uv Photocell bpw21 amplifier
Text: Issued July 1998 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles
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BPW34 smd
Abstract: phototransistor application lux meter BPW20
Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSMY3850
J-STD-020
2002/95/EC
2002/96/EC
VSMY3850
2002/95/EC.
2011/65/EU.
JS709A
BPW34 smd
phototransistor application lux meter
BPW20
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BPW34 osram
Abstract: wi41g BPW34 application note
Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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VSMY1850X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850X01
2002/95/EC.
2011/65/EU.
JS709A
BPW34 osram
wi41g
BPW34 application note
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lux meter chip
Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability
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VSMY1850
J-STD-020
2002/95/EC
2002/96/EC
VSMY1850
2002/95/EC.
2011/65/EU.
JS709A
lux meter chip
IR Diodes
BPW41N IR DATA
80085
short distance measurement ir infrared diode
wi41g
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S288P
Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30DY-H Ic Collector current. 30A Vcex Collector-emitter v o lta g e . 600V hFE DC current gain. 75 Insulated Type
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QM30DY-H
30DY-H
E80276
E80271
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