Untitled
Abstract: No abstract text available
Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V UTC MMBTA92
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MMBTA92
MMBTA92
-300V
MMBTA92)
625mW
OT-23
MPSA93
MPSA92
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PDF
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2SA1627
Abstract: pnp transistor 600V 2sa162
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
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Original
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2SA1627
2SA1627
O-126
QW-R204-010
pnp transistor 600V
2sa162
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
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2SA1627
2SA1627
O-126
QW-R204-010
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PDF
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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PDF
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2SA1627A
Abstract: 600v pnp
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
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Original
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2SA1627A
2SA1627A
O-126C
QW-R217-004
600v pnp
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
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Original
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2SA1627A
2SA1627A
O-126C
QW-R217-004
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:
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Original
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
MPSA92
MPSA93
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PDF
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MPSA92
Abstract: MPS-A92
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:
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Original
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
OT-89
MPSA92
MPSA93
MPS-A92
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PDF
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MPSA92
Abstract: No abstract text available
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:
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Original
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
OT-89
MPSA93
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PDF
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mpsa92 transistor
Abstract: Transistor MPSA92
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:
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Original
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
MPSA92
MPSA93
mpsa92 transistor
Transistor MPSA92
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PDF
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MPSA92
Abstract: No abstract text available
Text: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:
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Original
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MPSA92
MPSA92/93
-300V
MPSA92)
-200V
MPSA93)
625mW
MPSA93
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PDF
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SOT-23 2D
Abstract: sot 23 2D pnp transistor 300v sot23 MMBTA92 MPSA92 MPSA93
Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V
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Original
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MMBTA92
MMBTA92
-300V
350mW
OT-23
MPSA93
MPSA92
625mW
100MHz
QW-R206-005
SOT-23 2D
sot 23 2D
pnp transistor 300v sot23
MPSA92
MPSA93
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBTA92 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V
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Original
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MMBTA92
MMBTA92
-300V
350mW
OT-23
-30sing
QW-R206-005
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PDF
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MPSA93
Abstract: PZTA92 PZTA93
Text: UTC PZTA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 2 1 3 FEATURES * High Collector-Emitter voltage:
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Original
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PZTA92
PZTA92/93
-300V
PZTA92)
-200V
PZTA93)
1000mW
OT-223
PZTA92
PZTA93
MPSA93
PZTA93
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS APPLICATIONS The UTC 2SD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage
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2SD1804
O-252
QW-R209-006
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PDF
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utc 2sd1804
Abstract: No abstract text available
Text: UTC 2SD1804 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS APPLICATIONS The UTC 2SD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. 1 FEATURES *Low collector-to-emitter saturation voltage
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Original
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2SD1804
O-252
100ms
QW-R209-006
utc 2sd1804
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PDF
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PZTA92
Abstract: PZTA93 AL 102 pnp transistor
Text: UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * Collector-emitter voltage: VCEO=-300V UTC PZTA92
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PZTA92/93
PZTA92/93
-300V
PZTA92)
-200V
PZTA93)
PZTA42/43
PZTA92L
PZTA93L
PZTA92G
PZTA92
PZTA93
AL 102 pnp transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD PZTA92/93 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * Collector-emitter voltage: VCEO=-300V UTC PZTA92
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PZTA92/93
PZTA92/93
-300V
PZTA92)
-200V
PZTA93)
PZTA42/43
PZTA92G-AA3-R
PZTA93G-AA3-R
OT-223
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PDF
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HLB122L
Abstract: HLB122
Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB122
HLB122
O-251
HLB122L
QW-R213-014
HLB122L
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PDF
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HLB121
Abstract: No abstract text available
Text: UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB121
HLB121
O-251
HLB121L
QW-R213-015
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5551
MMDT5551
MMDT5551G-AL6-R
OT-363
QW-R218-022
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PDF
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High Voltage Switching Transistor
Abstract: MMDT5551
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5551 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5551
MMDT5551
MMDT5551L-AL6-R
MMDT5551G-AL6-R
OT-363
QW-R218-022
High Voltage Switching Transistor
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PDF
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equivalent of 5401 transistor
Abstract: 5401 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMDT5401
-150V
MMDT5401L-AL6-R
MMDT5401G-AL6-R
OT-363
QW-R218-021
equivalent of 5401 transistor
5401 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMDT5401 Preliminary DUAL TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMDT5401 is a high voltage fast-switching dual PNP transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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Original
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MMDT5401
MMDT5401
-150V
MMDT5401G-AL6-R
OT-363
QW-R218-021
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PDF
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