UT50N03
Abstract: UT50N03L-TN3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT50N03L
|
Original
|
UT50N03
UT50N03L
UT50N03-TN3-R
UT50N03L-TN3-R
UT50N03-TN3-T
UT50N03L-TN3-T
O-252
QW-R502-168
UT50N03
UT50N03L-TN3-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251 FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 TO-252 SYMBOL
|
Original
|
UT50N03
O-251
O-252
O-252D
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-T
UT50N03G-TN3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
|
PDF
|
168E
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 50A, 30V N-CHANNEL POWER MOSFET FEATURES * RDS ON < 14 mΩ @ VGS = 10 V, ID = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION
|
Original
|
UT50N03
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TND-R
UT50N03G-TND-R
O-251
O-252
O-252D
168E
|
PDF
|
168B
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 SYMBOL TO-251 2.Drain
|
Original
|
UT50N03
O-252
O-251
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TN3-T
UT50N03G-TN3-T
168B
|
PDF
|