Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET -4A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process
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UT2311
UT2311G-AE3-R
OT-23
QW-R502-365
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT2311 Power MOSFET 2 0 V P-CH AN N EL EN H AN CEM EN T M ODE M OSFET ̈ FEAT U RES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process
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Original
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UT2311
UT2311L-AE3-R
UT2311G-AE3-R
OT-23
QW-R502-365
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Preliminary Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability * With advanced technology of trench process
|
Original
|
UT2311
UT2311G-AE3-R
OT-23
QW-R502-365
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2311 Power MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES * Extremely low on-resistance due to high density cell * Perfect thermal performance and electrical capability with advanced technology of trench process
|
Original
|
UT2311
UT2311L-AE3-R
UT2311G-AE3-R
OT-23
QW-R502-365
|
PDF
|