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    UPS ICA 1200 Search Results

    UPS ICA 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    54F191/QFA Rochester Electronics LLC BINARY COUNTER; 4-BIT SYNCHRONOUS UP/DOWN; PRESETTABLE Visit Rochester Electronics LLC Buy
    93S16/BEA Rochester Electronics LLC 93S16 - Binary Counter, Synchronous, Up Direction, TTL, CDIP16 Visit Rochester Electronics LLC Buy
    54196DM/B Rochester Electronics LLC 54196 - Decade Counter, Asynchronous, Up Direction, TTL, CDIP14 Visit Rochester Electronics LLC Buy

    UPS ICA 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMIKRON V rsm I frms m axim um va lue fo r continuous operation V rrm 650 A V I fav (sin. 180; Tease = 89 °C; 50 Hz) 400 A 800 S K K E 400 F 08 1200 S K K E 400 F 12 1400 S K K E 400 F 14 1600 S K K E 400 F 16 1800 S K K E 400 F 18 Sym bol C ond itio ns


    OCR Scan     		PDF KE400P16 KE400F17 KE400F19

    diode sy 710

    Abstract: sy 710 diode
    Text: MITSUBISHI TRAN SISTOR M OD U LES \ QM300DY-24B ¡ HIGH POWER SWITCHING U SE INSULATED TYPE QM300DY-24B • lc • Vcex • hFE Collector current. 300A Collector-emitter voltage 1200V DC current gain . 750


    OCR Scan     		PDF QM300DY-24B E80276 E80271 diode sy 710 sy 710 diode

    Untitled

    Abstract: No abstract text available
    Text: DF054 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4215 - 3.3 March 1998 Supersedes February 1996 version, DS4215 - 3.2 KEY PARAMETERS V RRM 3500V 1470A Jf AV 14000A FSM 1200|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.


    OCR Scan     		PDF DF054 DS4215 4000A DF054

    GA200TD120U

    Abstract: No abstract text available
    Text: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		PDF GA200TD120U GA200TD120U

    GP1200FSS12S

    Abstract: No abstract text available
    Text: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.


    OCR Scan     		PDF GP1200FSS12S DS4547 190ns 840ns GP1200FSS12S

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •


    OCR Scan     		PDF GP1600FSS12S DS4337 190ns 840ns

    Untitled

    Abstract: No abstract text available
    Text: M ITEL S E M IC O N D U C T O R GP400LSS12S Powerline N-Channel IGBT Module Supersedes July 1998 version, DS4137 - 7.3 DS4137 - 7.4 Decem ber 1998 The G P 400LS S 12S is a single sw itch 1200 volt, robust n channel e n h a n ce m e n t m ode insulated gate b ip ola r


    OCR Scan     		PDF DS4137 GP400LSS12S 400LS

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2397-01MR N-channel MOS-FET FAP-II Series > Features - 2,3H 80 0V 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK2397-01MR

    GP600FHB16S

    Abstract: No abstract text available
    Text: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.


    OCR Scan     		PDF GP600FHB16S DS4545 GP600FHB16S

    Untitled

    Abstract: No abstract text available
    Text: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.


    OCR Scan     		PDF GP600DHB16S DS4335

    Untitled

    Abstract: No abstract text available
    Text: TF447.A MITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, DS4273 - 2.3 DS4273 - 2.4 KEY PARAMETERS 1200V DRM 470A ^T RMS 5000A TSM dV/dt 200V/|iS dl/dt 500A/(iS 20 (.is t. APPLICATIONS • High Pow er Inverters And C hoppers.


    OCR Scan     		PDF TF447. DS4273

    TRANSISTOR TT 2158

    Abstract: 1200 va ups circuit diagram QM600HA-2H QM600HA-2HK QM600HA qm600
    Text: MITSUBISHI TRANSISTOR MODULES .p f c V -V QM600HA-2HK m W HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-2HK Collector current.600A j Collector-emitter voltage. 1000V j hFE DC current gain. 75


    OCR Scan     		PDF QM600HA-2HK TRANSISTOR TT 2158 1200 va ups circuit diagram QM600HA-2H QM600HA-2HK QM600HA qm600

    RC snubber dc motor

    Abstract: No abstract text available
    Text: DK27.FA M ITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes O ctober 1995 version, DS4269 - 2.2 DS4269 - 2.3 APPLICATIONS • High Power Inverters And Choppers. ■ UPS. KEY PARAMETERS 1200V DRM 290A ^T RMS 5000A ^TSM dVdt 200V/(is dl/dt 500A/|is


    OCR Scan     		PDF DS4269 20kHz. 12FAK. RC snubber dc motor

    Untitled

    Abstract: No abstract text available
    Text: MITEL DK13.FX Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, D S4411 - 1.0 D S4411 -1 .1 KEY PARAMETERS 1200V DRM APPLICATIONS • High Power Inverters And Choppers. ■ UPS. March 1998 130A ^T RMS 1600A 200V/|iS 500A/(iS 15(iS


    OCR Scan     		PDF S4411 20kHz. 12FXM.

    HJ 358

    Abstract: No abstract text available
    Text: M ITEL S E M IC O N D U C T O R ITH23F06 High Speed Powerline N-Channel IGBT A dvance Inform ation DS4990-2.2 O ctober 1998 T h e IT H 2 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF452 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4213 - 3.1 DS4213 - 3.2 March 1998 KEY PARAMETERS V RRM 1600V 540A Jf AV 5000A FSM 35|lC Q, APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.


    OCR Scan     		PDF DF452 DS4213 DF452

    2sk mosfet rf power

    Abstract: No abstract text available
    Text: 2SK1023-01 FUJI POWER MOS-FET N- CHANNEL SILICON POWER MOS-FET F - I I S E R IE S • Features lO utline D raw ings • H ig h s p e e d s w itc h in g • l o w o n -re s is ta n c e • N o s e c o n d a ry b re a k d o w n • l o w d riv in g p o w e r


    OCR Scan     		PDF 2SK1023-01 2sk mosfet rf power

    Untitled

    Abstract: No abstract text available
    Text: TA449.W M ITEL Asymmetric Thyristor S E M IC O N D U C T O R DS4681 - 4.1 Supersedes January 1997 version, DS4681 - 4.0 KEY PARAMETERS 1400V DRM 400A ^T RMS 4000A ^TSM dVdt 1 0 0 0 V /|iS APPLICATIONS • UPS. ■ Induction Heating. March 1998 ■ A.C. Motor Drives.


    OCR Scan     		PDF TA449. DS4681 20kHz. TA44914W TA44912W TA449

    Untitled

    Abstract: No abstract text available
    Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 - 5.3 March 1998 TYPICAL KEY PARAMETERS 1600V 'c E sat, 3.3V 'q c o N T , 300A 'c (PK, 600A 270ns 590ns APPLICATIONS • High Pow er Sw itching.


    OCR Scan     		PDF GP300LSS16S DS4136 270ns 590ns

    FAG 28 diode

    Abstract: gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode
    Text: GP300LSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1996 version, DS4136 - 5.2 DS4136 -5 .3 March 1998 TYPICAL KEY PARAMETERS 1600V ' c E sa„ 3.3V *C(CONT 300A 'c p k , 600A tr 270ns t. 590ns APPLICATIONS • High Power Switching.


    OCR Scan     		PDF GP300LSS16S DS4136 270ns 590ns FAG 28 diode gp300lss INPUT/FAG 28 diode AN4504 FAG 50 diode

    TA32910Q

    Abstract: No abstract text available
    Text: M ITEL TA329.Q Asymmetric Thyristor S E M IC O N D U C T O R DS4680 - 2.1 Supersedes January 1997 version, DS4680 - 2.0 KEY PARAMETERS 1400V DRM 370A ^T RMS 2000A ^TSM dVdt 1000V/|iS d l/d t 1000A/|iS t. 7.0(iS APPLICATIONS • High Frequency Applications.


    OCR Scan     		PDF DS4680 TA329. TA32910Q

    Untitled

    Abstract: No abstract text available
    Text: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 - 3.3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.


    OCR Scan     		PDF DF754 DS4216 M779b.

    IXSN62

    Abstract: No abstract text available
    Text: 4 b û b 2 2 b 0 0 0 1 5 2 b 7êb « I X Y DIXYS IXSN62N60U1 IGBT with Diode IC25 V CES Combi Pack CE sat = 90 A = 600 V = 2.5 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions v’ ces vtcor Tj v QES v OEM 'c2S = 25'C to Maximum Ratings


    OCR Scan     		PDF IXSN62N60U1 OT-227 IXSN62

    Untitled

    Abstract: No abstract text available
    Text: TF709.Y M ITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, DS4277 - 2.1 DS4277 - 2.2 KEY PARAMETERS 1400V DRM 900A T RMS APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■ Railway Traction. ■ Induction Heating.


    OCR Scan     		PDF TF709. DS4277 2000A TF70914Y TF70912Y TF70910Y TF709