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    UPA811T Price and Stock

    California Eastern Laboratories (CEL) UPA811T-T1-A

    RF TRANS 2 NPN 10V 8GHZ SOT363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPA811T-T1-A Reel 3,000
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    • 10000 $2.4
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    Rochester Electronics LLC UPA811T-T1-A

    RF SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPA811T-T1-A Bulk 650
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    Renesas Electronics Corporation UPA811T-T1-A

    Trans RF BJT NPN 10V 0.035A 6-Pin Mini-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical UPA811T-T1-A 18,000 751
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    • 1000 $0.472
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    Rochester Electronics UPA811T-T1-A 18,000 1
    • 1 $0.4442
    • 10 $0.4442
    • 100 $0.4175
    • 1000 $0.3776
    • 10000 $0.3776
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    UPA811T Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA811T Unknown SMD, High Frequency Amplifier, 20V 35mA 110mW, Silicon NPN Transistor (integrated circuit) Original PDF
    uPA811T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 x 2SC4228) SMAL Original PDF
    UPA811T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Original PDF
    UPA811T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 8GHZ SOT363 Original PDF
    uPA811TFB-T1 NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4228) Small Mini Mold Original PDF
    uPA811TGB-T1 NEC High-Frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 x 2SC4228) Small Mini Mold Original PDF
    UPA811T-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA811T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Original PDF
    UPA811T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA811T-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 8GHZ SOT363 Original PDF

    UPA811T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR UPA811T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		PDF NE680 UPA811T UPA811T UPA811T-T1-A 24-Hour

    ultra low noise NPN transistor

    Abstract: NE680 npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T UPA811T-T1
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		PDF UPA811T NE680 UPA811T UPA811T-T1, 24-Hour ultra low noise NPN transistor npn dual emitter RF Transistor ultra low noise transistor S21E UPA811T-T1

    NE680

    Abstract: S21E UPA811T UPA811T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA811T NE680 UPA811T UPA811T-T1 24-Hour S21E UPA811T-T1

    NE680

    Abstract: S21E UPA811T UPA811T-T1 UPA811T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA811T NE680 UPA811T S21E UPA811T-T1 UPA811T-T1-A

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    icm 6116

    Abstract: 2SC4228
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PA811T 2SC4228 PA811T, PA811T-T1 icm 6116 2SC4228

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    UPA801T

    Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T


    Original     		PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T

    nec d 588

    Abstract: NEC 2532 NEC 2504
    Text: DATA SHEET SILICON TRANSISTOR uPA811T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The /xPA811T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS am plify low noise in the VHF band to the UHF band.


    OCR Scan     		PDF uPA811T 2SC4228) /xPA811T nec d 588 NEC 2532 NEC 2504

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • UPA811T PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    OCR Scan     		PDF NE680 UPA811T UPA811T UPA811T-T1

    low power rf transistor T

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View LOW NOISE FIGURE: IMF = 1 .9 dB TYP at 2 GHz 2 .1 1 0 . 1 HIGH GAIN: - 1 . 2 5 ± 0.1-


    OCR Scan     		PDF NE680 UPA811T UPA811T UPA811T-T1 24-Hour low power rf transistor T

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA811T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 N E680 Die in a 2 mm x 1.25 m m package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB T Y P at 2 G Hz HIGH GAIN:


    OCR Scan     		PDF UPA811T UPA811T-T1, 24-Hour

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132