UNR1231A Search Results

UNR1231A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UNR1231A		Panasonic	NPN Transistor with built-in Resistor		Original	PDF
UNR1231A		Panasonic	Silicon NPN epitaxial planer transistor with biult-in resistor		Original	PDF
UNR1231A		Panasonic	Silicon NPN Epitaxial Planar Transistor		Original	PDF

UNR1231A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UNR1231 Abstract: UNR1231A Text: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 • Absolute Maximum Ratings Parameter 1.0 0.4 7 0. R 0.55±0.1 3 Ratings UNR1231 Collector to emitter voltage UNR1231A 20 IC 0.7 A Peak collector current	Original	PDF	UNR1231/1231A UN1231/1231A) UNR1231 UNR1231A UNR1231 UNR1231A
UN1231 Abstract: UN1231A UNR1231 UNR1231A Text: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (Emitter open) (Base open) Rating Unit VCBO 20 V 60 VCEO UNR1231A (1.0) 0.45±0.05 0.55±0.1	Original	PDF	UNR1231 UN1231) UNR1231A UN1231A) UN1231 UN1231A UNR1231 UNR1231A
UN1231 Abstract: UN1231A UNR1231 UNR1231A Text: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (1.0) 2.0±0.2 R 0.7 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit VCBO	Original	PDF	UNR1231 UN1231) UNR1231A UN1231A) UN1231 UN1231A UNR1231 UNR1231A
UN1231 Abstract: UN1231A UNR1231 UNR1231A Text: Transistors with built-in Resistor UNR1231 UN1231 , UNR1231A (UN1231A) Silicon NPN epitaxial planar type Unit: mm For amplification of the low frequency 2.5±0.1 (1.0) R 0.9 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage UNR1231 (Emitter open)	Original	PDF	UNR1231 UN1231) UNR1231A UN1231A) UN1231 UN1231A UNR1231 UNR1231A
Untitled Abstract: No abstract text available Text: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 2.5±0.1 6.9±0.1 ● (1.0) 4.5±0.1 2.0±0.2 High forward current transfer ratio hFE. M type mold package. Costs can be reduced through downsizing of the equipment and	Original	PDF	UNR1231/1231A UN1231/1231A) UNR1231 UNR1231A 55onductor
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
UNR1231 Abstract: UNR1231A a1025 Text: Transistors with built-in Resistor UNR1231/1231A UN1231/1231A Silicon NPN epitaxial planar transistor Unit: mm 2.5±0.1 6.9±0.1 ● (1.0) 4.5±0.1 2.0±0.2 High forward current transfer ratio hFE M type mold package Costs can be reduced through downsizing of the equipment and	Original	PDF	UNR1231/1231A UN1231/1231A) UNR1231 UNR1231A UNR1231 UNR1231A a1025
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928