Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ULTRA LOW POWER MOSFET FAST SWITCHING Search Results

    ULTRA LOW POWER MOSFET FAST SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW POWER MOSFET FAST SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SHD225623

    Abstract: max3090
    Text: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS


    Original     		PDF SHD225623 O-254 O-254 SHD225623 max3090

    SHD225623

    Abstract: No abstract text available
    Text: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS


    Original     		PDF SHD225623 SHD225623

    AF8958C

    Abstract: P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET
    Text: AF8958C N and P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low Gate Charge - Fast Switching Speed - RoHS Compliant The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF8958C AF8958C P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET

    4935p

    Abstract: No abstract text available
    Text: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4935P 4935P

    4910n

    Abstract: PN channel MOSFET 10A
    Text: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4910N 4910N PN channel MOSFET 10A

    4920n

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
    Text: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4920N 4920N 4920N Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8

    PN channel MOSFET 10A

    Abstract: 4910N AF4910N
    Text: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4910N 4910N 015x45 PN channel MOSFET 10A AF4910N

    4935P

    Abstract: AF4935P
    Text: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4935P 4935P 015x45 AF4935P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )


    Original     		PDF 75N75 O-220F1 O-220F2 O-263 O-220F O-220 75N75 QW-R502-097

    9945n

    Abstract: 9945n mosfet
    Text: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF9945N 9945N 9945n mosfet

    9945n

    Abstract: 9945n mosfet AF9945N If 9945n
    Text: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF9945N 9945N 015x45 9945n mosfet AF9945N If 9945n

    UT2302

    Abstract: 114 c
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-11ues QW-R502-114 114 c

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309-AE3-R UT2309L-AE3-R OT-23 QW-R502-127

    UT2309L

    Abstract: UT2309-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309G UT2309-AE3-R UT2309L-AE3-R UT2309G-AE3-R OT-23 QW-R502-148 UT2309L UT2309-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309-AE3-R UT2309L-AE3-R OT-23 QW-R502-127

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2306 UT2306 UT2306L UT2306-AE3-R UT2306L-AE3-R OT-23 QW-R502-130

    UT2306

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2306 UT2306 UT2306L UT2306-AE3-R UT2306L-AE3-R OT-23 QW-R502-130

    UT2302

    Abstract: UT2302-AE3-R UT2302L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell,. with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114 UT2302-AE3-R UT2302L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309A Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309A is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309A UT2309A UT2309AL UT2309A-AE3-R UT2309AL-AE3-R OT-23 QW-R502ues QW-R502-148

    list of n channel power mosfet

    Abstract: UT2308 UY SOT-23 ultra low power mosfet fast switching UT2308L
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2308 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2308 UT2308 UT2308L UT2308-AE3-R UT2308L-AE3-R OT-23 QW-R502-128 list of n channel power mosfet UY SOT-23 ultra low power mosfet fast switching UT2308L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 OT-89 UT9435L UT9435-AB3-R UT9435L-AB3-R QW-R502-155

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 UT9435G-AB3-R UT9435L-TN3-R UT9435G-TN3-R UT9435G-S08-R OT-89 O-252 QW-R502-155