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    UHF POWER MOSFET 3W Search Results

    UHF POWER MOSFET 3W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    UHF POWER MOSFET 3W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    RD15HVF1

    Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		PDF RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w

    1299 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 RD30HUF1-101 Oct2011 1299 mosfet

    RD15HVF1

    Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101

    100OHM

    Abstract: RD30HUF1 IDQ10
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz 100OHM IDQ10

    Mitsubishi transistor C 1588

    Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz Mitsubishi transistor C 1588 S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    AN-UHF-098

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098

    100OHM

    Abstract: RD30HUF1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM

    RD15HVF1-101

    Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d

    147J

    Abstract: 100OHM RD30HUF1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 147J 100OHM

    transistor 636 mitsubishi

    Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


    Original     		PDF RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 transistor 636 mitsubishi rd30 100OHM RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734

    transistor D 1557

    Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W 3.2+/-0.4 1.3+/-0.4 3.6+/-0.2 2 9+/-0.4 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION 1 2 3 For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz transistor D 1557 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391

    tda vertical IC tv crt

    Abstract: colour tv sound system ic TV horizontal Deflection Systems LCD TV column driver IC Large Panels datasheet TRIAC MAC 218 UHF preamplifier for BF998 vertical deflection oscillator in television TDA audio power amplifier audio video uhf tv transmitter tda audio amplifier
    Text: Philips Semiconductors Semiconductors for Television and Video Systems Index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet. PAGE


    Original     		PDF 80C528; 83C528 83C145; 83C845; 83C055; 87C055 83C654 80C652; 83C652 84C44X; tda vertical IC tv crt colour tv sound system ic TV horizontal Deflection Systems LCD TV column driver IC Large Panels datasheet TRIAC MAC 218 UHF preamplifier for BF998 vertical deflection oscillator in television TDA audio power amplifier audio video uhf tv transmitter tda audio amplifier

    MAR 703 MOSFET TRANSISTOR

    Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    mitsubishi L200

    Abstract: c14 fet
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


    Original     		PDF RD35HUF2 175MHz, 530MHz, 43Wtyp, 530MHz 45Wtyp, 175MHz mitsubishi L200 c14 fet

    transistor W66

    Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


    Original     		PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz Oct2011 transistor W66 w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18

    177J

    Abstract: MOS 3020 RD35HUF2 w18 transistor
    Text: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON


    Original     		PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz 177J MOS 3020 w18 transistor

    rd15hvf

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz rd15hvf

    LCD Inverter board A6J

    Abstract: walkie talkie, pcb layout and Schematic circuit diagram of smps 400w DESKTOP Comparison between the L6562A and the L6562 l6562 smps 600W schematic diagram ac-dc inverter L6562 400W ADS2005A walkie talkie with schematic diagram
    Text: 76-3 August 2007 STHDMI002A NEATSwitch TM By R. Bhatia Advanced Logic and Mixed Signal Marketing DIGITAL HDMI SWITCHES FOR ADVANCED DISPLAYS The NEATSwitch family has recently been enlarged by the introduction of the STHDMI002A, a highbandwidth differential digital video switch. It is able


    Original     		PDF STHDMI002A STHDMI002A, L6562A L6562 70kHz L6562A LCD Inverter board A6J walkie talkie, pcb layout and Schematic circuit diagram of smps 400w DESKTOP Comparison between the L6562A and the L6562 l6562 smps 600W schematic diagram ac-dc inverter L6562 400W ADS2005A walkie talkie with schematic diagram

    rd15hvf

    Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
    Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:


    Original     		PDF RD15HVF1 175MHz520MHz RD15HVF1 175MHz 520MHz Oct2011 rd15hvf RF Transistor s-parameter 30W transistor d 1302

    rd15hvf

    Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 rd15hvf RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9