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    UHF GA AS Search Results

    UHF GA AS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet

    UHF GA AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz • High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC5319

    2SC5319

    Abstract: No abstract text available
    Text: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz · High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		PDF 2SC5319 2SC5319

    2SK2685

    Abstract: Hitachi DSA002750 ADE80
    Text: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. VDS = 6 or more voltage.


    Original     		PDF 2SK2685 D-85622 2SK2685 Hitachi DSA002750 ADE80

    2SK2685

    Abstract: Hitachi DSA00117
    Text: 2SK2685 GaAs HEMT Application CMPAK-4 UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.


    Original     		PDF 2SK2685 2SK2685 Hitachi DSA00117

    2SK2685

    Abstract: Hitachi DSA002758
    Text: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.


    Original     		PDF 2SK2685 ADE-208-400 2SK2685 Hitachi DSA002758

    Hitachi DSA002750

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		PDF 2SK2685 D-85622 Hitachi DSA002750

    2SK2685

    Abstract: Hitachi DSA00384
    Text: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.


    Original     		PDF 2SK2685 ADE-208-400 2SK2685 Hitachi DSA00384

    2SK2685

    Abstract: DSA003642
    Text: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		PDF 2SK2685 ADE-208-400A 2SK2685 DSA003642

    Untitled

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •


    OCR Scan     		PDF 2SK2685

    Untitled

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT HITACHI ADE-208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3 V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz)


    OCR Scan     		PDF 2SK2685 ADE-208 D-85622

    2SK2856

    Abstract: transistor 4809
    Text: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 2SK2856 transistor 4809

    2SK2856

    Abstract: pi1510
    Text: TOSHIBA 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 0.7dB f=1.5GHz • High Gain : Ga = 21.5dB (f=1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 2SK2856 pi1510

    ADE-208-400

    Abstract: ha 1758
    Text: 2SK2685 GaAs HEMT HITACHI ADE-208-400 1st. E d itio n Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. • High voltage. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)


    OCR Scan     		PDF 2SK2685 ADE-208-400 ADE-208-400 ha 1758

    nf 922

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2856 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2856 UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 0.7dB f=1.5GHz High Gain : Ga = 21.5dB (f= 1.5GHz) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2856 53Z14 --j250 nf 922

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5317 2Ghz amplifier
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz VHF-UHF Band Low Noise Amplifier 2SC5317 2Ghz amplifier

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5322
    Text: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)


    OCR Scan     		PDF 2SC5322 16GHz VHF-UHF Band Low Noise Amplifier 2SC5322

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) + 0.2 s 2 .9 - 0.3 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323

    Untitled

    Abstract: No abstract text available
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.3dB f=2GHz : Ga= 11.5dB (f=2GHz) s + 0.2 2 .9 - 0 .3 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5318

    2SC5318

    Abstract: VHF-UHF Band Low Noise Amplifier
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5318 2SC5318 VHF-UHF Band Low Noise Amplifier

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323

    2SC5318

    Abstract: BB34
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz : Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5318 2SC5318 BB34

    2SC5323

    Abstract: Toshiba if amplifier
    Text: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5323 2SC5323 Toshiba if amplifier

    Untitled

    Abstract: No abstract text available
    Text: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.3dB f=2GHz :Ga = 11.5dB (f=2GHz) 2 .9 -0 .3 -fr MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5318

    Untitled

    Abstract: No abstract text available
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz