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    UHF DUAL GATE Search Results

    UHF DUAL GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    UHF DUAL GATE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SGM2016AM

    Abstract: SGM2016AP dual-gate
    Text: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


    Original     		SGM2016AM/AP SGM2016AM/AP SGM2016AM SGM2016AP 900MHz M-254 SGM2016AM SGM2016AP dual-gate PDF

    3SK166A

    Abstract: 3SK166A-0 3SK166A-2 N-Channel, Dual-Gate FET
    Text: 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to


    Original     		3SK166A 3SK166A 800MHz M-254 3SK166A-0 3SK166A-2 N-Channel, Dual-Gate FET PDF

    SGM2016AN

    Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
    Text: SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.


    Original     		SGM2016AN SGM2016AN M-281 900MHz dual-gate SGM2016 N-Channel, Dual-Gate FET PDF

    3SK166A

    Abstract: nf 922 3SK166A-0 3SK166A-2 C 3807 transistor 3SK166
    Text: 3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF


    Original     		3SK166A 3SK166A 800MHz M-254 nf 922 3SK166A-0 3SK166A-2 C 3807 transistor 3SK166 PDF

    3SK166A

    Abstract: 3SK166A-0 3SK166A-2 3SK1
    Text: 3SK166A GaAs N-channel Dual Gate MES FET Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.


    Original     		3SK166A 3SK166A 800MHz M-254 3SK166A-0 3SK166A-2 3SK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1


    Original     		HA21001MS PDF

    3SK320

    Abstract: "GaAs N-channel Dual Gate" 3SK3
    Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO −6 V Gate 2-drain voltage


    Original     		3SK320 3SK320 "GaAs N-channel Dual Gate" 3SK3 PDF

    3SK320

    Abstract: 1202 toshiba transistor
    Text: 3SK320 Preliminary TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK320 UHF Band Low Noise Amp UHF Band Mix Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Gate 1-drain voltage VG1DO -6 V Gate 2-drain voltage VG2DO


    Original     		3SK320 3SK320 1202 toshiba transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Oct 31 Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PINNING - SOT559A FEATURES • Dual band GSM amplifier PIN • 3.6 V nominal supply voltage


    Original     		M3D454 BGY280 GSM1800 GSM900 OT559A PDF

    dual-gate

    Abstract: No abstract text available
    Text: SONY SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


    OCR Scan     		SGM2016AM/AP SGM2016AM/AP 900MHz SGM2016AM M-254 SGM2016AP M-255 dual-gate PDF

    SONY 877

    Abstract: No abstract text available
    Text: SONY 3SK166A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to


    OCR Scan     		3SK166A 800MHz M-254 3SK166A SONY 877 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


    OCR Scan     		SGM2016AN SGM2016AN 900MHz M-281 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3SK166A SONY GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK166A is an N-channel dual gate GaAs M ES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to


    OCR Scan     		3SK166A 3SK166A 800MHz 0Q2D24A M-254 A3fl23fl3 PDF

    0945 transistor

    Abstract: Sony Semiconductor M-281 SGM2016AN dual-gate
    Text: SONY SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.


    OCR Scan     		SGM2016AN SGM2016AN 900MHz M-281 JO-651 M-281 0945 transistor Sony Semiconductor M-281 dual-gate PDF

    BF980

    Abstract: BF980A
    Text: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.


    OCR Scan     		BF980A BF980 BF980A PDF

    Dual-Gate Mosfet

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF997 PINNING APPLICATIONS • UHF and VHF applications such as UHF/VHF television tuners and professional communications equipment. • Especially intended for use in pre-amplifiers in CATV


    OCR Scan     		OT143 BF997 Dual-Gate Mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: SGM2016AM/AP SONY GaAs N-channel Dual-Gate MES FET Preliminary D escription SGM 2016AM The SGM 2016AM /AP is an N-channel dual-gate SG M 2016AP G aAs M ES FET for UHF-band low-noise amplification. This FE T is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,


    OCR Scan     		SGM2016AM/AP 2016AM 2016AM 2016AP 900MHz 2DD53 M-254 PDF

    3SK146

    Abstract: No abstract text available
    Text: 3SK146 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm TV TUNER UHF MIXER APPLICATIONS. FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : CrSs=0.02pF Typ. . Low Noise Figure : NF=2.6dB(Typ.)


    OCR Scan     		3SK146 800MHz TTA25A200A 3SK146 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK127 T V TUNER, UHF RF AM PLIFIER APPLICATIONS. T V TUNER, UHF M IXER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max. • Low Noise Figure : NF = 3.2dB (Typ.)


    OCR Scan     		3SK127 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.


    OCR Scan     		BF980A CA10S 003ST43 bti53t131 0035T44 PDF

    3SK127

    Abstract: No abstract text available
    Text: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS TV TUNER, UHF M IXER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.03pF Max.


    OCR Scan     		3SK127 3SK127 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 27 TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER, UHF M IXER APPLICATIONS. • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.03pF Max.


    OCR Scan     		3SK127 PDF

    dual-gate

    Abstract: No abstract text available
    Text: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		BF980A dual-gate PDF

    3SK320

    Abstract: L 0946
    Text: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage


    OCR Scan     		3SK320 961001EAC1 3SK320 L 0946 PDF