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    UGF19125 Search Results

    UGF19125 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF19125 Cree LDMOS FETs in Class AB Operation 1900 MHz Cellular Original PDF
    UGF19125F Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UGF19125P Cree FET Transistor, 125W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF19125 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA UGF19125 PDF

    UGF19125

    Abstract: UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    UGF19125 1955MHz, 1965MHz f1-10MHz 10MHz) -43dBc 1300mA 28VDC, 1960MHz UGF19125 UGF19125F UGF19125P PDF

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original
    UGF19125 MRF19125/MRF19125S. UGF19125 50 watts amplifier 10mhz 10mhz mosfet Cree Microwave UGF19125F UGF19125P PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original
    BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF