UPG101
Abstract: UPG100B UPG101B UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG101B
UPG101P
UPG101
24-Hour
UPG100B
UPG101B
UPG101P
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UPG101B
Abstract: UPG100B UPG101 UPG101P
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG101B
UPG101P
UPG101
24-Hour
UPG101B
UPG100B
UPG101P
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C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
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UPC1677B
C1677
UPC1678B
C1678
UPG100B
UPG101B
UPG103B
24-Hour
C1678
c1677
UPC1678B
UPG100B
uPG101
MARKING 106
UPG101B
G100
G101
G103
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Untitled
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY
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UPG101B
UPG101P
UPG101P
b427525
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT //PG100B, uPG101B WIDE-BAND AMPLIFIER The /¿PG100B and /¿PG101B are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. The /¿PG100B is low noise amplifier from 50 MHz to 3 GHz and /¿PG101B is a medium power amplifier in the
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uPG100B
uPG101B
PG100B
PG101B
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l06S
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY FEATURES_ • ULTRA WIDE BAND: 50 MHz to 3 GHz • MEDIUM POWER: +18 dBm TYP at f - 50 MHz to GHz Qf • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft
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UPG101B
UPG101P
UPG101
TA-V75
15turns
l06S
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Untitled
Abstract: No abstract text available
Text: SEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG101B UPG101P Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27±0.1 1.27±0.1 • MEDIUM POWER: + 18 dBm TYP at f = 50 M Hz to 3 GHz 0.4 (LEADS 1,3,5,7) (LEADS 2,4,6,8) 0.6 *
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UPG101B
UPG101P
UPG101
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uPG101
Abstract: UPG101B PIAB PIAB CHIP UPG101P gp 532
Text: NEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG101B UPG101P Units in mm O UTLINE B08 • U L T R A W ID E B A N D : 50 MHz to 3 GHz 1.27+01 1.27+0.1 • M E D IU M P O W E R : + 18 dB m TYP at f = 50 M Hz to 3 GHz (LEADS 2.4,6,8) 0.6 '
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UPG101B
UPG101P
UPG101
PIAB
PIAB CHIP
UPG101P
gp 532
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Untitled
Abstract: No abstract text available
Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY ULTRA WIDE BAND: 50 MHz to 3 GHz MEDIUM POWER: +18 dBm TYP at f = 50 MHz to GHz oo •D INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q HERMETICALLY SEALED PACKAGE ASSURES
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UPG101B
UPG101P
UPG101
UPG101P
or30nm
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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Untitled
Abstract: No abstract text available
Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6
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UPG100B
UPG101B
UPG103B
UPG110B
UPG100P
UPG101P
flB08
UPG503B
UPG506B
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uPG101
Abstract: internal circuit diagram of choke G100B 101B ICL7660 mmic n5 UPG101B
Text: A r p . i CA TION NO TE APPLICATION THE WIDE BAND AM PLIFIERS /¿PG1 00B/^PG101B NOTE 1. GENERAL juPG100B/101 B is the GaAs MMIC GaAs Microwave Monolithic Integrated Circuit developed as the low noise wide band amplifier/medium power wide band amplifier.
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uPG100B
uPG101B
juPG100B/101
jUPG101
1987M
uPG101
internal circuit diagram of choke
G100B
101B
ICL7660
mmic n5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT / / P G 1 B , / / P G 1 1 B WIDE-BAND AMPLIFIER The //PG100B and ¡uPG101B are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. The //PG100B is low noise am plifier from 50 MHz to 3 GHz and //PG101B is a medium power am plifier in the
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uPG100B
uPG101B
//PG100B
//PG101B
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prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
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