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    U635H256 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    U635H256 Unknown POWER STORE 32K x 8 NVSRAM Original PDF
    U635H256 Simtek PowerStore 32K x 8 nvSRAM Original PDF
    U635H256 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C25 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C25 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C35 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C35 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C45 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1C45 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1K25 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1K25 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1K35 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1K35 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BD1K45 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDC25 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDC25 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDC35 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDC45 ZMD PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDC45 ZMD America PowerStore 32K x 8 nvSRAM Original PDF
    U635H256BDK25 ZMD PowerStore 32K x 8 nvSRAM Original PDF

    U635H256 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description S High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description S High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    ZMD AG

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 ZMD AG PDF

    303F

    Abstract: U635H256
    Text: U635H256 PowerStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 M3015 303F U635H256 PDF

    303F

    Abstract: PDIP28 U635H256
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features F F F F F F F F F F F F F F F F F Description High-performance CMOS nonvolatile static RAM 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original
    U635H256 M3015 D-01109 D-01101 303F PDIP28 U635H256 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    303F

    Abstract: PDIP28 U635H256
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features F F F F F F F F F F F F F F F F F Description High-performance CMOS nonvolatile static RAM 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original
    U635H256 M3015 D-01109 D-01101 303F PDIP28 U635H256 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description S High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 PDF

    303F

    Abstract: PDIP28 U635H256 ZMD AG
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 303F PDIP28 ZMD AG PDF

    U6-35

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    U635H256 U635H256 D-01109 D-01101 U6-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: U635H256 PowerStore 32K x 8 nvSRAM Features Description ‡ The U635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or


    Original
    U635H256 M3015 U635H256 PDF

    atmel 93c66

    Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
    Text: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования


    Original
    ST011 DIP42 DIP42, RS232 155RE3 556RT4 556RT4A 556RT5 atmel 93c66 PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A intel 8755 eprom 2716 537RU17 PDF

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


    Original
    GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS PDF

    PDIP24

    Abstract: PDIP32 U635H256 U635HM1024 sop44
    Text: U635HM1024 Advanced Information PowerStore 128K x 8 nvSRAM Features High-performance CMOS nonvolatile static RAM Module 4 x 32768 x 8 bits 25, 35 and 45 ns Access Times 10,15 and 20 ns Output Enable Times ICC = 50 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original
    U635HM1024 M3015 PDIP32 D-01109 D-01101 PDIP24 U635H256 U635HM1024 sop44 PDF

    PT001

    Abstract: 32KX8 U630H16 U63716 U637H256 U635H256 U637256 U631H256 U632H16 U632H64
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: [email protected] 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10057 02 PCN Status PCN Date October 04, 2006 PCN Type


    Original
    U63xxx UL63xxx U630H16 U632H16 U632H64 U631H256 32KX8 U634H256 U635H256 PT001 U63716 U637H256 U637256 PDF

    atmel 24c16a

    Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
    Text: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256


    Original
    \btl117 AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 atmel 24c16a ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS PDF

    STK14C88

    Abstract: U635H256 U635H256D
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: [email protected] 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10054 01 PCN Status PCN Type Final PCN Date October 04, 2006


    Original
    U635H256 32Kx8 28-pin U635H256D U635H256D1 U635H256S U635H256S2 STK14C88 PDF

    Untitled

    Abstract: No abstract text available
    Text: U 63 5 H 2 5 6 SOFTWARE NONVOLATILE RECALL HARDWARE PROTECT A RECALL cycle of the EEPROM data into the SRAM is initiated with a sequence of READ operations in a manner similar to the STORE initiation. To initiate the RECALL cycle the following sequence of READ opera­


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