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    U2267 Search Results

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    U2267 Price and Stock

    APEM Inc U2267

    SWITCH SEALING BOOT
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    TURCK Inc U2-26797

    Cordset, Cable, Roadside, LAS #6, ASI Network Trunk | Turck U2-26797
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    TURCK Inc U2-26796

    Cordset, Cable, Roadside, LAS #5, ASI Network Trunk | Turck U2-26796
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    TURCK Inc U2-26798

    Cordset, Cable, Roadside, LAS #7, ASI Network Trunk | Turck U2-26798
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    TURCK Inc U2-26706

    Cordset, Cable, Trunk, Sensors, LAS #3 | Turck U2-26706
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    RS U2-26706 Bulk 1
    • 1 $312.04
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    U2267 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Earth inductors SNG Series Earth Inductors TÜV Rheinland [RoHS [RoHS Compliant] Compliant] SNG-19A-080 SNG-19B-080 SNG-25A-600 SNG-25B-600 SNG-19DA-014 SNG-19DB-014 SNG-25DA-086 SNG-25DB-086 Insulation resistance M⏲ * ≧20 ≧20 ≧20 ≧20 ≧20 ≧20


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    PDF SNG-19A-080 SNG-19B-080 SNG-25A-600 SNG-25B-600 SNG-19DA-014 SNG-19DB-014 SNG-25DA-086 SNG-25DB-086 160kHz) P0938MCAF10VOL09E

    NJM274

    Abstract: S M 475 35v
    Text: Operational Amplifiers 2回路入り出力フルスイング単電源オペアンプ NJM2746VTNJM2746RB1T 特徴 + •出力フルスイング VOH≧4.9V / VOL≦0.1V at V =5V, RL=5kΩ ■入力オフセット電圧 1mV typ ■スルーレート 3.5V/ s typ


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    PDF NJM2746VTNJM2746RB1T 10nV/Hz RS10k RL10k 5V14V CMR60dB NJM274 S M 475 35v

    Untitled

    Abstract: No abstract text available
    Text: LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Rev. 1.2 Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current


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    PDF LY61L102416A 1024K Page11 w416ALL-10IT LY61L102416ALL-10I LY61L102416ALL-10T LY61L102416ALL-10 LY61L102416AGL-12IT

    Untitled

    Abstract: No abstract text available
    Text: LY61L10248A 1M X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Initial Issued 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current Icc1 on page3


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    PDF LY61L10248A Page11 industry85â LY61L10248AML-8T LY61L10248AML-8 LY61L10248AGL-12IT

    Untitled

    Abstract: No abstract text available
    Text: LY61L5128A 512K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.4 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue July.12. 2012 Rev. 1.1 .“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current


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    PDF LY61L5128A LY61L5128AML-10I LY61L5128AML-8T LY61L5128AML-8 LY61L5128AML-10IT

    LLD1003E01

    Abstract: OP 741 L7060-02 for LASER RANGE FINDER
    Text: HIGH-POWER INFRARED PULSED LASER DIODE L7060-02 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum Ta=25℃ 100 RELATIVE RADIANT POWER (%) (W) 30 20 10 10 20 30 •FEATURES ●High output power (φep≧30W) ●High speed rise time (tr=0.5 ns typ.)


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    PDF L7060-02 ep30W) LLD1003E01 LLD1003E01 OP 741 L7060-02 for LASER RANGE FINDER

    ITR03486

    Abstract: ITR03480 ITR03482 ITR03484 ITR03488 ITR03490
    Text: 4MN10MH 注文コード No. N A 0 4 9 3 三洋半導体データシート N 4MN10MH NPN エピタキシァルプレーナ型シリコントランジスタ 高周波一般増幅用 特長 ・高 fT である:fT typ=400MHz。 ・高耐圧である:VCEO ≧ 200V。


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    PDF 4MN10MH 400MHz 4MP10MH 600mm2 ITR03488 ITR03490 ITR03492 ITR11803 A0493-3/3 ITR03486 ITR03480 ITR03482 ITR03484 ITR03488 ITR03490

    Untitled

    Abstract: No abstract text available
    Text: SOFT RECOVERY DIODE MODULE DCA100AA DCA100AA 93.5max 80 《Advantages》 《特長》 • Low Forward Voltage Drop(VFM≦1.30V) • 低オン電圧 • Fast and Soft recovery(trr≦300ns tb/ta≧0.8) • 高速・ソフトリカバリー • Average Forward Current(100A)


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    PDF DCA100AA 300ns DCA100AA60

    Cyntec

    Abstract: No abstract text available
    Text: 乾坤科技股份有限公司 CYNTEC CO., LTD. Resistance Ω Deviation(Ω) Deviation(℃) (1)Relationship of temperature with resistance When t≧0°C When t < 0°C Rt=Rο(1+At+Bt ) Rt=Rο[1+At+Bt +C(t-100)t ] A=3.9083E-03 A=3.9083E-03 B=-5.7750E-07 B=-5.7750E-07


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    PDF t-100 9083E-03 7750E-07 1830E-12 Cyntec

    A12509

    Abstract: V 4136 AE01 LB11997H 4136 A12505
    Text: LB11997H 動作条件 / Ta=25℃ 電源電圧 VCC1 VCC2 unit V 4~6 ≧VCC1 VCC3 4∼13.6 V 4∼13.6 V 応用例 / Ta=25℃ 12Vモデル 5Vモデル unit VCC1 VCC2=VCC3 VCC1=VCC3 REG.電圧 UN-REG.電圧 REG.電圧 VCC2 ブーストアップ電圧 または REG.電圧 注


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    PDF LB11997H VCC15V, VCC2VCC312V A12508 A12509 A12510 A12511 A12512 A12509 V 4136 AE01 LB11997H 4136 A12505

    ITR04363

    Abstract: ITR04364 2SA1710 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
    Text: 注文コード No. N 3 0 9 7 2SA1710/2SC4490 No. N 3 0 9 7 20400 2SA1710 / 2SC4490 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である(VCEO ≧ 300V)


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    PDF 2SA1710/2SC4490 2SA1710 2SC4490 2SA1710 ITR04375 ITR04363 ITR04364 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362

    N4728

    Abstract: 2SC4563 ITR07208 ITR07209 ITR07210 ITR07211 ITR07212 ITR07213 MA400A
    Text: 注文コード No. N 4 7 2 8 2SC4563 No. N4728 21500 エピタキシァルプレーナ形シリコントランジスタ 2SC4563 特長 ・高 fT である:fT=1.2GHz typ。 ・高耐圧である:VCEO ≧ 80V。 ・大電流である:IC=500mA。 超高精細度 CRT ディスプレイ


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    PDF 2SC4563 N4728 500mA 100mA 2042B ITR07215 ITR07214 N4728 2SC4563 ITR07208 ITR07209 ITR07210 ITR07211 ITR07212 ITR07213 MA400A

    Untitled

    Abstract: No abstract text available
    Text: AN0024 GPR23L12800B Bonding and Layout Issue Sep. 11, 2007 GPR23L12800B Bonding and Layout Issue Power Pad Bonding Guideline 1. Except NC pads, all the other Power pads should be wire bonded, please do not keep them floating. 2. Please keep the PCB layout width ≧ 20 mil for the VCC/VCCQ and VSS/VSSQ. Figure 1


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    PDF AN0024 GPR23L12800B 300mA

    Untitled

    Abstract: No abstract text available
    Text: 3スタック パルスレーザダイオード L11854-307-05 •特長 ●ピーク光出力:≧21 W ●ピーク発振波長:905 nm ●発光エリアサイズ:70 m x 10 μm ■用途 ●レーザレンジファインダ(レジャー測量)


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    PDF L11854-307-05 L11854ã LPLD2017J02

    Untitled

    Abstract: No abstract text available
    Text: LY61L51216A 512K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.3 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Initial Issued “CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current Icc1 on page3


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    PDF LY61L51216A Page13 LY61L51216AML-8I LY61L51216AML-8T LY61L51216AML-8 LY61L51216AGL-12IT

    Untitled

    Abstract: No abstract text available
    Text: ELM742xxC CMOS 低功耗电压比较器 •概要 ELM742xxC 是一个在 Vss ~ Vdd 范围内都可以工作的低功耗 CMOS 电压比较器 IC。该 IC 在单电源和低 电压电源(Vdd ≧ 1.0 V)下都可以工作。输出方式有N沟道漏极开路输出和 CMOS 输出两种。


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    PDF ELM742xxC ELM742xxC

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS  FEATURES * High breakdown voltage: VCBO, VCEO≧300V * Small reverse transfer capacitance and excellent high frequency


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    PDF 2SC3468 2SC3468G-x-AB3-R OT-89 QW-R208-037

    2SK223

    Abstract: VDS30V
    Text: 注文コード No.N 6 5 9 K 2SK223 No. N659K 71099 半導体ニューズ No.659J とさしかえてください。 2SK223 特長 N チャネル接合形シリコン電界効果トランジスタ 高電圧ドライブ用 ・超高耐圧である(VGDS ≧− 80V)。


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    PDF 2SK223 N659K 20mS/VDS 2SK223 ITR00606 ITR00607 ITR00608 ITR00609 VDS30V

    2SA1777

    Abstract: 2SC4623 ITR04625 ITR04626 ITR04627 ITR04628
    Text: 注文コード No. N 3 6 4 4 2SA1777/2SC4623 No. N3644 20100 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1777 / 2SC4623 特長 ・高 fT である:fT=400MHz(typ) 。 ・高耐圧である:VCEO ≧ 250V(min)


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    PDF 2SA1777/2SC4623 N3644 2SA1777 2SC4623 400MHztyp 250Vmin 2SA1777 250mA 2SC4623 ITR04625 ITR04626 ITR04627 ITR04628

    2SC3790

    Abstract: 2SA1480 ITR03783 ITR03784 ITR03785 ITR03786
    Text: 注文コード No.N 2 2 5 4 2SA1480 / 2SC3790 No. N2254 20400 2SA1480 / 2SC3790 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である : VCEO ≧ 300V。


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    PDF 2SA1480 2SC3790 N2254 2SC3790 2SA1480 ITR03797 ITR03783 ITR03784 ITR03785 ITR03786

    S M 475 35v

    Abstract: No abstract text available
    Text: Operational Amplifiers 2回路入り出力フルスイング単電源オペアンプ NJM2746VTNJM2746RB1T 特徴 + •出力フルスイング VOH≧4.9V / VOL≦0.1V at V =5V, RL=5kΩ ■入力オフセット電圧 1mV typ ■スルーレート 3.5V/ s typ


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    PDF NJM2746VTNJM2746RB1T 10nV/Hz RS10k RL10k 5V14V CMR60dB S M 475 35v

    XC6211

    Abstract: sot-23-5 marking cy XC6219 voltage regulator sot-89-5 xc6219b XC6211 marking
    Text: ◆CMOS Low Power Consumption ◆Dropout Voltage : 60mV@30mA 200mV@100mA ◆Output Current : 150mA VOUT<1.75V 240mA (VOUT≧1.8V) (300mA limit) ◆Highly Accurate : ±2%(VOUT>1.5V) ±30mV (VOUT≦1.5V) ◆Output Voltage Range : 0.9V to 5.0V (50mV increments)


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    PDF 200mV 100mA 150mA 240mA 300mA XC6211/XC6219 XC6211/6219 XC6211/62p-pAC XC6211/19X302 XC6211 sot-23-5 marking cy XC6219 voltage regulator sot-89-5 xc6219b XC6211 marking

    IRDF

    Abstract: JIS-C-5102 JISC-5102 15KV 1250VAC 24RC C51021986 C5102
    Text: •仕様および試験方法 (JIS C5102-1986に準拠) 項 目 1 2 使 静 3 用 温 規 格 値 度 電 範 容 囲 量 30pF以上:Q≧1000 30pF未満:Q≧400+20C(SL) 抗 端 子 間


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    PDF C5102-1986 30pFQ1000 30pFQ40020CSL 4R250V 10000M 15KVC 1000M C5102 IRDF JIS-C-5102 JISC-5102 15KV 1250VAC 24RC C51021986

    2sc3468

    Abstract: 2SC3468L
    Text: UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1 * High breakdown voltage: VCBO, VCEO≧300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-89


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    PDF 2SC3468 VCEO300V OT-89 2SC3468L QW-R208-037 2sc3468 2SC3468L