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    vsb3200

    Abstract: vsb320
    Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b


    Original     		PDF TY045S200S6OT TY054S200S6OT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 vsb3200 vsb320

    VSB2200S

    Abstract: No abstract text available
    Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b


    Original     		PDF TY045S200S6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VSB2200S

    vsb3200

    Abstract: VSB2200S V30200C VSB3200S
    Text: New Product TY.S200.6. Series www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 200 V • Low forward voltage drop • High frequency operation C 2 d b


    Original     		PDF TY045S200S6OT TY054S200S6OT 11-Mar-11 vsb3200 VSB2200S V30200C VSB3200S