Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP LBCX17LT1G LBCX18LT1G NPN LBCX19LT1G LBCX20LT1G FEATURE Pb-Free Package is available. ORDERING INFORMATION Voltage and current are negative Device for PNP transistors Package Shipping LBCX17LT1G SOT-23
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LBCX17LT1G
LBCX18LT1G
LBCX19LT1G
LBCX20LT1G
OT-23
3000/Tape
LBCX17LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. ƽ Pb-Free Package is available.
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323/SCâ
LMBT3904WT1G
LMBT3906WT1G
OT-323/SC-70
3000/Tape
LMBT3904WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in
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LMBT3946DW1T1
23/SOTâ
LMBT3946DW1T1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN5111T1G
70/SOTâ
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Untitled
Abstract: No abstract text available
Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications
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MBT3904DW1T1,
MBT3906DW1T1,
MBT3946DW1T1
23/SOT
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA143EET1
SC-89
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LMUN2110LT1G PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN2110LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA123EET1
SC-89
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
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363/SCâ
LBC846BPDW1T1G
LBC847CPDW1T1G
LBC848CPDW1T1G
LBC847BPDW1T1G
LBC848BPDW1T1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the
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LDTB114ELT1G
LDTB114ELT1G
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MSB709
Abstract: SC-75 SOT-353 b1
Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100
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MSB709
OT-23
MSB709
18-Sep-06
SC-75
SOT-353 b1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN2111LT1G SERIES 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LMUN2111LT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LMUN5311DW1T1G
LMUN5311DW1T1G
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178 15T
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G
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L9015TLT1G
L9014.
3000/Tape
L9015TLT3G
10000/Tape
178 15T
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network LDTA114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA114EM3T5G
OT-723
OT-723
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA113ZLT1G FFeatures 1) The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be positively
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LDTA113ZLT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: X LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012XLT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device 1 Package Shipping 2 L9012xx X LT1G SOT-23 3000/Tape&Reel L9012XLT3G SOT-23 10000/Tape&Reel SOT-23 TO-236AB
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L9012XLT1G
L9012xx
OT-23
3000/Tape
L9012XLT3G
10000/Tape
O-236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550*LT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device Package Shipping L8550*LT1G SOT-23 3000/Tape&Reel L8550*LT3G SOT-23 3000/Tape&Reel 1 2 SOT– 23 MAXIMUM RATINGS
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L8550
OT-23
3000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA123JET1 FEATURES: 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with
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LDTA123JET1
SC-89
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9015QLT1G 15Q 3000/Tape&Reel L9015QLT3G 15Q
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L9015XLT1G
L9014.
L9015QLT1G
3000/Tape
L9015QLT3G
10000/Tape
L9015RLT1G
L9015RLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.
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LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
LBC807
3000/Tape
LBC807-16LT3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LBSS63LT1G PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 Featrues CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER Pb-Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage
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LBSS63LT1G
236AB)
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