Untitled
Abstract: No abstract text available
Text: Pr E2G1050-17-X1 el im y 4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1050-17-X1
304-Word
MD56V62400/H
cycles/64
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active suspension
Abstract: MD56V62800A
Text: Pr E2G1054-18-62 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1054-18-62
152-Word
MD56V62800A
cycles/64
active suspension
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PDF
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MD56V62160
Abstract: No abstract text available
Text: Pr E2G1052-17-X1 el im y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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E2G1052-17-X1
576-Word
16-Bit
MD56V62160/H
cycles/64
MD56V62160
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TC59SM816
Abstract: No abstract text available
Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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Original
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TC59SM816/08/04BFT/BFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816BFT/BFTL
TC59SM808BFT/BFTL
TC59SM804BFT/BFTL
TC59SM816
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133M
Abstract: TC59SM816 TC59SM816CFTI-75
Text: TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4
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TC59SM816CFTI-75
304-WORDS
16-BITS
TC59SM816CFTI
133M
TC59SM816
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MD56V62400
Abstract: MD56V62400H TSOPII54
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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Original
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J2G1050-17-X1
MD56V62400/H
MD56V62400/H
304-Word
MD56V62400/HCMOS4
09664ms
Latency23
54400milTSOP
TSOPII54-P-400-0
80-KMD56V62400/H-xxTA
MD56V62400
MD56V62400H
TSOPII54
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active suspension
Abstract: MD56V62800A
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MD56V62160
Abstract: MD56V62160H TSOPII54
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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Original
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J2G1052-17-X1
MD56V62160/H
MD56V62160/H
576-Word
16-Bit
MD56V62160/HCMOS4
09664ms
Latency23
54400milTSOP
TSOPII54-P-400-0
MD56V62160
MD56V62160H
TSOPII54
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PDF
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Untitled
Abstract: No abstract text available
Text: TC59SM716/08/04AS/ASL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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Original
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TC59SM716/08/04AS/ASL-70
152-WORDS
16-BITS
304-WORDS
608-WORDS
TC59SM716AS/ASL
TC59SM708AS/ASL
TC59SM704AS/ASL
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PDF
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Untitled
Abstract: No abstract text available
Text: TSOPII54-P-400-0.80-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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TSOPII54-P-400-0
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MD56V62800
Abstract: No abstract text available
Text: Pr E2G1051-17-X1 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800/H is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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Original
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E2G1051-17-X1
152-Word
MD56V62800/H
cycles/64
MD56V62800
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PDF
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133M
Abstract: TC59SM716 TC59SM716AFTI-75
Text: TC59SM716AFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM716AFTI is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4
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TC59SM716AFTI-75
152-WORDS
16-BITS
TC59SM716AFTI
133M
TC59SM716
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PDF
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TC59SM816
Abstract: No abstract text available
Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM816/08/04BFT/BFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816BFT/BFTL
TC59SM808BFT/BFTL
TC59SM804BFT/BFTL
TC59SM816
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425M
Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
Text: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3
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P-LFBGA144-1313-0
P-BGA256-2727-1
P-BGA352-3535-1
P-BGA420-3535-1
P-BGA560-3535-1
P-TFLGA32-0806-0
425M
DIP18
DIP20
DIP28
DIP32
DIP40
SOJ28-P-400-1
PGA wire bonding
IPGA400-C-S33U-1
PGA240
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QSJ-50074
Abstract: QSJ-44403 QFJ28-P-S450-1 QSJ-44574 SSOP60-P-700-0 SSOP30-P-56-0 SOP8-P-250-1 QSJ52627 sop44-p-600-1.27-k QFJ20
Text: 7.包装 7. 包装 7-1. 包装形態 - 2 7-1-1. 通常包装 - 2 7-1-2. 防湿包装 - 3 7-2. 個装仕様 - 4
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300mil
QSJ44400
DIP8P3002
DIP14P3002
DIP16P3002
DIP18P3002
DIP20P3002
DIP22P3002
DIP8G3002
QSJ-50074
QSJ-44403
QFJ28-P-S450-1
QSJ-44574
SSOP60-P-700-0
SSOP30-P-56-0
SOP8-P-250-1
QSJ52627
sop44-p-600-1.27-k
QFJ20
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TC59SM816
Abstract: TSOPII54 04CFT
Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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TC59SM816/08/04CFT/CFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816CFT/CFTL
TC59SM808CFT/CFTL
TC59SM804CFT/CFTL
TC59SM816
TSOPII54
04CFT
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PDF
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active suspension
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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TSOPII54
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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Original
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J2G1043-17-64
MSM56V64400/H
MSM56V64400/H
304-Word
MSM56V64400/HCMOS4
09664ms
Latency23
54400milTSOP
TSOPII54-P-400-0
80-KMSM56V64400/H-xxTS-K
TSOPII54
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PDF
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2DQ11
Abstract: TSOPII54 MSM56V64800
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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Original
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J2G1042-17-64
MSM56V64800/H
MSM56V64800/H
152-Word
MSM56V64800/HCMOS4
09664ms
Latency23
54400milTSOP
TSOPII54-P-400-0
80-KMSM56V64800/H-xxTS-K
2DQ11
TSOPII54
MSM56V64800
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PDF
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TC59SM816
Abstract: No abstract text available
Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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Original
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TC59SM816/08/04CFT/CFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816CFT/CFTL
TC59SM808CFT/CFTL
TC59SM804CFT/CFTL
TC59SM816
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PDF
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BA0413
Abstract: No abstract text available
Text: J2G1051-17-X1 作成：1998年 3月 ¡ 電子デバイス MD56V62800/H l MD56V62800/H 暫定 4-Bankx2,097,152-Word×8-Bit SYNCHRONOUS DYNAMIC RAM n 概要
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Original
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J2G105117X1
MD56V62800/H
MD56V62800/H
152Word
MD56V62800/HCMOS4
09664ms
Latency23
54400milTSOP
TSOPII54P4000
80KMD56V62800/HxxTA
BA0413
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PDF
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Untitled
Abstract: No abstract text available
Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM
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Original
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TC59SM816/08/04BFT/BFTL-70
304-WORDS
16-BITS
608-WORDS
216-WORDS
TC59SM816BFT/BFTL
TC59SM808BFT/BFTL
TC59SM804BFT/BFTL
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PDF
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D56V62160
Abstract: BA RX transistor d56v621 3tr5
Text: O K I Semiconductor MD56V62160/H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N T he M D 5 6 V 6 2 1 6 0 /H is a 4 -b a n k x 1,048,576-w ord x 16-bit sy n c h ro n o u s d y n a m ic R A M , fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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OCR Scan
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MP56V62160/H_
576-Word
16-Bit
MD56V62160/H
cycles/64
D56V62160
BA RX transistor
d56v621
3tr5
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor E2G1052-17-X1 M D 5 6 V 6 2 1 6 0 /H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M D 56V 62160/H is a 4-bank x 1,048,576-w ord x 16-bit synchronous dynam ic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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OCR Scan
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E2G1052-17-X1
576-Word
16-Bit
62160/H
576-w
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PDF
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