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    TSOP 62 PACKAGE Search Results

    TSOP 62 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 62 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9  9//%66 *HQHUDO ,QIRUPDWLRQ 0% 0; ''5 6'5$0 81%8 (5(' 62',00  3,1 'HVFULSWLRQ The VL470L1624 is a 16M X 64 Double Data Rate SDRAM high density SODIMM. This memory module consists of four CMOS 16Mx16 bit with 4 banks DDR Synchronous DRAMs in TSOP packages and a 2K


    Original     		PDF VL470L1624 16Mx16 200-pin DQ0-DQ63

    Untitled

    Abstract: No abstract text available
    Text: 3URGXFW 6SHFLILFDWLRQV PART NO: 5 9  9//%66 *HQHUDO ,QIRUPDWLRQ 0% 0; ''5 6'5$0 81%8 (5(' 62',00  3,1 'HVFULSWLRQ The VL470L1624 is a 16M X 64 Double Data Rate SDRAM high density SODIMM. This memory module consists of four CMOS 16Mx16 bit with 4 banks DDR Synchronous DRAMs in TSOP packages and a 2K


    Original     		PDF VL470L1624 16Mx16 200-pin DQ0-DQ63

    TSOP 86 Package

    Abstract: A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin
    Text: 1999 DRAM Design Guidelines Options Package Width Data Rate Voltage I/O 16Mb 64Mb 128Mb 256Mb Clock MHz 1 54 TSOP x4 SDR 3.3V LVTTL na 16Mx4 32Mx4 64Mx4 PC100/133 2 54 TSOP x8 SDR 3.3V LVTTL na 8Mx8 16Mx8 32Mx8 PC100/133 3 54 TSOP x16 SDR 3.3V LVTTL na 4Mx16 8Mx16 16Mx16


    Original     		PDF 128Mb 256Mb 16Mx4 32Mx4 64Mx4 PC100/133 16Mx8 32Mx8 4Mx16 TSOP 86 Package A11E 128MB PC266 TSOP 54 Package 4mx32 TSOP 400 86 TSOP 54 PIN tsop 66 TSOP 66 Package ddr 240 pin

    a634

    Abstract: No abstract text available
    Text:      for ChipCorder Products                    Table 1: ISD Device Package Options Package Options1 E ISD Series G P S T X W Z 8x13.4mm 0.350 inch 0.600 inch 0.300 inch 8x20mm Die Wafer Chip Scale


    Original     		PDF 8x20mm ISD4003 a634

    29LV160TE

    Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
    Text: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,


    Original     		PDF D-63303 F-94035 D-85737 I-20080 29LV160TE 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc

    MX23L12822

    Abstract: MX23L12822MC-12 MX23L12822YC-12 tsop 86
    Text: MX23L12822 128M-BIT 8M x 16 / 4M x 32 MASK ROM WITH PAGE MODE FEATURES • Current - Operating: 75mA (max.) - Standby: 15uA (max.) • Supply voltage - 3.3V±10% • Package - 70 pin SSOP (500 mil) - 86 pin TSOP(2) • Bit organization - 8M x 16 (byte mode)


    Original     		PDF MX23L12822 128M-BIT 120ns D31/A-1 PM0561 DEC/15/1999 JAN/14/2000 DEC/26/2000 MX23L12822 MX23L12822MC-12 MX23L12822YC-12 tsop 86

    SO14E

    Abstract: so8b so6a SO24C so8e so48 SO34A SO16E Package SO8C SO36B
    Text: Ironwood Electronics Appendix D AP-D.1 APPENDIX D SOIC Chip Package Specifications: • SOIC with Gull Wing Leads . . . . . . . . . . . . . .page AP-D.2 thru AP-D.5 • SOIC with J-Leads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .page AP-D.6


    Original     		PDF SO10A SOJ28C SOJ28D SOJ30A SOJ32A SOJ32B SOJ32C SOJ36A SOJ36B SOJ40A SO14E so8b so6a SO24C so8e so48 SO34A SO16E Package SO8C SO36B

    Untitled

    Abstract: No abstract text available
    Text: UG216E3264HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3264HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3264HK(S)G(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP packages mounted on


    Original     		PDF UG216E3264HK 72Pin 16Mx4 400mil 1250mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216V2484HSG T 48M Bytes (16M x 24) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C2484HSG(T) is a 16,777,216 bits by 24 SIMM module.The UG216C2484HSG(T) is assembled using 6 pcs of 16Mx4 4K refresh DRAMs 400mil TSOP packages mounted on


    Original     		PDF UG216V2484HSG 72Pin UG216C2484HSG 16Mx4 400mil 1500mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216C3264HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3264HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3264HK(S)G(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs 400Mil SOJ/TSOP Packages mounted on


    Original     		PDF UG216C3264HK 72Pin 16Mx4 400Mil 1250mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216E3284HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3284HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3284HK(S)G(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Packages mounted on


    Original     		PDF UG216E3284HK 72Pin 16Mx4 400mil 1500mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216C3284HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3284HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3284HK(S)G(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP packages mounted on


    Original     		PDF UG216C3284HK 72Pin 16Mx4 400mil 1500mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216W3264HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216W3264HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216W3264HK(S)G(T) is assembled using 8 pcs of 16Mx4 3.3V 4K refresh EDO DRAMs 400Mil SOJ/TSOP Packages mounted


    Original     		PDF UG216W3264HK 72Pin 16Mx4 400Mil 1250mil)

    Untitled

    Abstract: No abstract text available
    Text: UG216E3254HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3254HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3254HK(S)G(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Packages mounted on


    Original     		PDF UG216E3254HK 72Pin 16Mx4 400mil 1000mil) 33unigen

    128m simm 72 pin

    Abstract: No abstract text available
    Text: UG232E3284HK S G(T) 128M Bytes (32M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG232E3284HK(S)G(T) is a 33,554,432 bits by 32 SIMM module.The UG232E3284HK(S)G(T) is assembled using 16 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Package mounted on


    Original     		PDF UG232E3284HK 72Pin 16Mx4 400mil 1500mil) 128m simm 72 pin

    Untitled

    Abstract: No abstract text available
    Text: UG232C3284HK S G(T) 128M Bytes (32M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG232C3284HK(S)G(T) is a 33,554,432 bits by 32 SIMM module.The UG232C3284HK(S)G(T) is assembled using 16 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Package mounted on


    Original     		PDF UG232C3284HK 72Pin 16Mx4 400mil 1500mil)

    128m simm 72 pin

    Abstract: UG232C3264HK
    Text: UG232C3264HK S G(T) 128M Bytes (32M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG232C3264HK(S)G(T) is a 33,554,432 bits by 32 SIMM module.The UG232C3264HK(S)G(T) is assembled using 16 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Package mounted on


    Original     		PDF UG232C3264HK 72Pin 16Mx4 400mil 1250mil) 128m simm 72 pin

    Untitled

    Abstract: No abstract text available
    Text: UG232E3264HK S G(T) 128M Bytes (32M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG232E3264HK(S)G(T) is a 33,554,432 bits by 32 SIMM module.The UG232E3264HK(S)G(T) is assembled using 16 pcs of 16Mx4 4K refresh DRAMs 400mil SOJ/TSOP Package mounted on


    Original     		PDF UG232E3264HK 72Pin 16Mx4 400mil 1250mil)

    PAL 007 pioneer

    Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
    Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions


    Original     		PDF

    sumitomo epoxy 6600

    Abstract: sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256
    Text: Parallel EEPROM 256Kbit Qualification Summary § Component Design & Construction Description § Test Summary Oper Life Test Data Retention Endurance Rel Humidity Autoclave Temp Cycle ESD Latch-up Electrical Dist./Char. available per request Plastic Package (TSOP, SOIC, PLCC)


    Original     		PDF 256Kbit AT28BV256 AT28C256 AT28HC256 32Kbit AT28C256, AT28C256F, AT28HC256, AT28HC256F, 1W0117 sumitomo epoxy 6600 sumitomo epoxy 1143 at27c256 data retention AT29LV020 sumitomo silver epoxy 28BV256 0c002 ATMEL AT27lv256 AT49*512 AT28C256

    land pattern for TSOP 2-44

    Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
    Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions


    Original     		PDF

    TSOP-48 pcb LAYOUT

    Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
    Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions


    Original     		PDF

    QFP160-P-2828-0

    Abstract: QFP304 TSOP 66 pin Package thermal resistance TSOP 48 thermal resistance bga 208 PACKAGE QFJ32-P-R450-1 SDIP64-P-750-1 SOJ28-P-400-1 QFP208-P-2828-0 TSOP 48 thermal resistance junction to case
    Text: This version: Apr. 2001 Previous version:Jun. 1997 PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE This document is Chapter 5 of the package information document consisting of 8 chapters in total. PACKAGE INFORMATION 5. THERMAL-RESISTANCE OF IC PACKAGE


    Original     		PDF

    LA 8512

    Abstract: samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : •10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 • 9: X9 •16: X16 • 18: X18 • 32: x32 60ns 70ns 80ns 100ns PACKAGE PROCESS & POWER


    OCR Scan     		PDF 100ns 16Bit 32Blt 18Bit 36Bit 200ns 250ns LA 8512 samsung dram 1M - FLASH PCMCIA linear card samsung memory rom 1K x8 SRAM 1m X 8 dip 1M - PCMCIA linear card SAMSUNG 256K x 16bit DRAM 30 pin SIP dram memory TSOP 44 Package nand memory