XPC823ZT66B2T
Abstract: XPC823ZT81B2T XPC823 XPC823ZT75B2T motorola tsmc XPC823ZT66B2 KXPC823ZT81B2T MPC823 MOS11 xpc823zt66
Text: Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: MPC823 XC Qualification in TSMC/WaferTech Motorola is pleased to announce an additional wafer fabrication facility, TSMC/WaferTech, for
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MPC823
XPC823
MOS11
W90913
W90904
W90912
XPC823ZT66B2T
XPC823ZT81B2T
XPC823ZT75B2T
motorola tsmc
XPC823ZT66B2
KXPC823ZT81B2T
xpc823zt66
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3248L
Abstract: No abstract text available
Text: RELIABILITY REPORT DATE: 6/8/05 QUALITY ENG : PART NUMBER MICREL KS8001L/KSZ8001L KS8001LD/KSZ8001LD PROJECT # PACKAGE TYPE : ASSEMBLY LOC LOT # FAB LOC D/C # PROCESS KS8001S 48L SSOP OSE GD64047MEA TSMC 0437A 0.18 um KS8001LD 48L QFP ASE GD64047MEK TSMC 0503A
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KS8001L/KSZ8001L
KS8001LD/KSZ8001LD
KS8001S
GD64047MEA
KS8001LD
GD64047MEK
10BASE-T/100BASE-TX/FX
KS8001L
KS8001S
KSZ8001L
3248L
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XPC823ZT66B2T
Abstract: XPC823 XPC823ZT75B2T XPC823ZT81B2T KXPC823ZT81B2T MPC823 W90913 XPC823ZT
Text: M Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: MPC823 XC Qualification in TSMC/WaferTech Motorola is pleased to announce an additional wafer fabrication facility, TSMC/WaferTech, for
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MPC823
XPC823
MOS11
W90913
W90904
W90912
XPC823ZT66B2T
XPC823ZT75B2T
XPC823ZT81B2T
KXPC823ZT81B2T
W90913
XPC823ZT
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XPC850SRZT50BT
Abstract: XPC850ZT50BT XPC850DEZT50BT XPC850SRZT80BT XPC850DEZT66BT XPC850SRZT66A SPB25 SC5302 MPC850 XPC850SRCZT50B
Text: Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: MPC850 XC Qualification in TSMC/WaferTech EFFECTIVE DATE: 30-SEPT-00 Motorola is pleased to announce an additional wafer fabrication facility, TSMC/WaferTech, for
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MPC850
30-SEPT-00
MOS11
C850ZT66A,
PPC850SRZT50A,
SC530206ZT50B,
XPC850CZT50A,
XPC850SRZT50BT
XPC850ZT50BT
XPC850DEZT50BT
XPC850SRZT80BT
XPC850DEZT66BT
XPC850SRZT66A
SPB25
SC5302
XPC850SRCZT50B
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tristate buffer cmos
Abstract: TSMC 0.18 um CMOS "embedded dram" tsmc tsmc cmos 0.13 um TSMC 0.18um tsmc cmos 0.13 MOSAID Technologies TSMC cmos 0.18um
Text: SoC-RAMTM PL Memory Core 0.18µm 4.97Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank
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97Mbit
tristate buffer cmos
TSMC 0.18 um CMOS
"embedded dram" tsmc
tsmc cmos 0.13 um
TSMC 0.18um
tsmc cmos 0.13
MOSAID Technologies
TSMC cmos 0.18um
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ISSI
Abstract: TSMC embedded Flash TSMC Flash memory 0.18 motorola tsmc flash Integrated Silicon Solution Inc "embedded dram" tsmc memory issi tsmc 0.18 flash TSMC embedded EEPROM
Text: Memory Based Solutions ISSI ¨ Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI198_11/98 ¨ Integrated Silicon Solution, Inc. Over Ten Years of High-Performance Memories ISSI Milestones Incorporated - 1988 u First Foundry Partnership TSMC - 1990
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ISSI198
ISSI
TSMC embedded Flash
TSMC Flash memory 0.18
motorola tsmc flash
Integrated Silicon Solution Inc
"embedded dram" tsmc
memory issi
tsmc 0.18 flash
TSMC embedded EEPROM
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tsmc cmos 0.13 um
Abstract: "embedded dram" tsmc
Text: SoC-RAMTM PL Memory Core 0.18µm 3Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank
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Untitled
Abstract: No abstract text available
Text: TSMC 0.18 micron Process OPERATING LIFE @ Tj = + 130-150c at rated Voltage Family Device Lot. Pkg Qty Act Hrs Rej Act Hrs Rej PHYs KS8001LD KS8001S KSZ8001S KSZ8001L GD64047MEL GD64047MEC GD64047MEQ GDP0833.02 QFP-48 SSOP-48 SSOP-48 QFP-48 116 116 77 77 168
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130-150c
KS8001LD
KS8001S
KSZ8001S
KSZ8001L
GD64047MEL
GD64047MEC
GD64047MEQ
GDP0833
QFP-48
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tsmc cmos 0.13 um
Abstract: "embedded dram" tsmc D1270 TSMC cmos 0.18um TSMC 0.18Um MOSAID Technologies
Text: SoC-RAMTM PL Memory Core 0.18µm 8Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank
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TSMC embedded Flash
Abstract: TSMC Flash memory 0.18 ISSI Integrated Silicon Solution Inc
Text: Over Ten Years of High-Performance Memories ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI198_11/98 ® Integrated Silicon Solution, Inc. Over Ten Years of High-Performance Memories ISSI Milestones Incorporated - 1988 u First Foundry Partnership TSMC - 1990
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ISSI198
TSMC embedded Flash
TSMC Flash memory 0.18
ISSI
Integrated Silicon Solution Inc
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roadmap ISSI
Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Text: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990
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IS22C020
IS22C040
IS22C041
IS22C042
IS82C600
roadmap ISSI
IS61C1024
IS61C64AH
IS61C64B
IS62C64
IS89C52
IS25M080A5T2R
IS80C32
flash memory 5v 16M-bit 48 TSOP
ISSI
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cmos tsmc 0.18
Abstract: tsmc eeprom ram tsmc 0.18 tsmc cmos 0.35 0.35 tsmc cmos 16V8 20V8
Text: PRESS RELEASE CYPRESS AND TSMC TEAMING UP ON 0.18-MICRON CPLD FAMILY Six-Layer Metal Process will Deliver Very High Density and Performance with Low Power SAN JOSE, Calif., September 14, 1998 - Cypress Semiconductor Corp. NYSE:CY and Taiwan Semiconductor Manufacturing Company (NYSE:TSM) today announced that they have entered
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18-MICRON
18-micron
18micron
Ultra37000,
FLASH370i,
cmos tsmc 0.18
tsmc eeprom
ram tsmc 0.18
tsmc cmos 0.35
0.35 tsmc cmos
16V8
20V8
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TSMC embedded Flash
Abstract: NT410 tsmc 0.18 flash TSMC Flash cmos tsmc 0.18 TSMC Flash memory 0.18 TSMC Flash IP tsmc cmos NT1208 NT1115
Text: Taiwan Semiconductor Manufacturing Company Ltd. January 27, 2000 Page 1 FOR IMMEDIATE RELEASE CONTACT IN TAIWAN CONTACT IN NEW YORK Derek Tien or Julie Chan Finance Division TSMC [email protected] 886/3/567-2664 Mami Ogawa Thomson Financial Investor Relations
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JESD22-A114F
Abstract: JESD47 JESD-47 JEDEC JESD22-B116 free download JESD22-A102C JESD22-A108B JESD22-B116A JESD22-A114-F JESD78B JESD22-A102-C
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: W-1002-01(R4) DATE: October 4, 2010 Affected Products: Refer to the attached list of products transferring from IDT Fab 4 to TSMC
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JESD22-A115B,
JESD78B
AV265
JESD22-B116-A,
EIA/JESD22-A110B,
EIA/JESD22-A102C,
168hrs
JESD22-A113
JESD22-A114F
JESD47
JESD-47
JEDEC JESD22-B116 free download
JESD22-A102C
JESD22-A108B
JESD22-B116A
JESD22-A114-F
JESD78B
JESD22-A102-C
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tsmc 0.18um
Abstract: TSMC 0.18um data sheet tsmc cmos RTL code for ethernet TSMC cmos 0.18um data sheet TSMC cmos 0.18um ethernet mdio circuit diagram 20 channel data transmitting circuit 3.125G block diagram for optical fiber receiver
Text: SB1000 PRODUCT BRIEF SILICON BRIDGE SB1000 - Quad 1 - 3.125Gbps Low Power CMOS Transceiver Macro Cell in 0.18um TSMC Process FEATURES BENIFITS/ADVANTAGES • • • • • • • • • • • • • • • • • • • • • Compliant with IEEE 802.3ae 10Gbps Ethernet
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SB1000
SB1000
125Gbps
10Gbps
8B/10B
tsmc 0.18um
TSMC 0.18um data sheet
tsmc cmos
RTL code for ethernet
TSMC cmos 0.18um data sheet
TSMC cmos 0.18um
ethernet mdio circuit diagram
20 channel data transmitting circuit
3.125G
block diagram for optical fiber receiver
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TSMC 0.35Um
Abstract: TSMC 1P4M HP83K cmos tsmc 0.18 tsmc FAB10 FAB-10 tsmc cmos 0.35 PI7C8150B PI7C8150A PI7C8152A
Text: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 06-04 Date Issued: June 30, 2006 Product(s) Affected: PI7C8150A, 8150A-33, 8150B, 8150B-33, PI7C8152A, 8152B Manufacturing Location Affected: TSMC Fab 7 and 10
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PI7C8150A,
150A-33,
8150B,
8150B-33,
PI7C8152A,
8152B
FAB10
TSMC 0.35Um
TSMC 1P4M
HP83K
cmos tsmc 0.18
tsmc FAB10
FAB-10
tsmc cmos 0.35
PI7C8150B
PI7C8150A
PI7C8152A
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CL018G
Abstract: TSMC 0.18 um CMOS silicon TSMC 0.18 um CMOS low power low noise frequency divider specification cmos tsmc 0.18 tsmc cmos model N-7075 0.18 um CMOS Process adc verilog tsmc cmos 0.18 um
Text: BRIEF PRODUCT SPECIFICATION nPLL20240-18a 240MHz Low Jitter PLL FEATURES • • • • • • • • • TSMC CL018G 1.8 V 240 MHz Low Jitter PLL Reference Clock Input 20 Mhz, 40 MHz and 80 MHz Programmable Steps, 3, 6 or 12 Divider 80 MHz, 40 MHz and 20 MHz Complimentary
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nPLL20240-18a
240MHz
CL018G
N-7075
TSMC 0.18 um CMOS silicon
TSMC 0.18 um CMOS
low power low noise frequency divider specification
cmos tsmc 0.18
tsmc cmos model
0.18 um CMOS Process
adc verilog
tsmc cmos 0.18 um
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TSMC Flash
Abstract: linear handbook E144 EP3C10 EP3C120 EP3C16 EP3C25 EP3C40 EP3C55 automatic heat detector project report
Text: Cyclone III Design Guidelines November 2008 AN-466-1.2 Introduction The Cyclone III FPGA family offered by Altera ® is a cost-optimized, memory-rich FPGA family. Cyclone III FPGAs are built on Taiwan Semiconductor Manufacturing Company's TSMC 65-nm low-power (LP) process technology with additional silicon
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AN-466-1
65-nm
TSMC Flash
linear handbook
E144
EP3C10
EP3C120
EP3C16
EP3C25
EP3C40
EP3C55
automatic heat detector project report
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70241k
Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054
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R-118
70241k
d5611
61c256
ic 9022
61c64
RELIABILITY REPORT ISSI
vacuum tubes
CMS 2015
S/TRANSISTOR J 5804 EQUIVALENT
28F010P
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c9013
Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.
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R-118
c9013
84 pin PBGA
oscilloscope MTBF
TSMC retention memory
dc 8069
IS61C1024
IC Data-book
Q-16
car radio 14x20
TSOP 8638
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TSMC 0.18Um
Abstract: No abstract text available
Text: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the
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6815-LA1-GR
TW6816-LA1-GR
TW6817-LA1-GR
TW6818-LA1-GR
TW6932-LA1-GR
1-888-INTERSIL
TSMC 0.18Um
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TSMC 0.35um
Abstract: tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc 0.18-um utac qfn TSMC 90nm TW6818-LA1-GR
Text: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the
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TW6815-LA1-GR
TW6816-LA1-GR
TW6817-LA1-GR
TW6818-LA1-GR
TW6932-LA1-GR
1-888-INTERSIL
TSMC 0.35um
tsmc 0.18um
Intersil marking code
TSMC 0.25Um
vanguard
0.35Um tsmc
0.18-um
utac qfn
TSMC 90nm
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PCI AHB DMA
Abstract: tsmc 0.18 axi bridge
Text: Compliant with PCI Express Base Specification 1.1 CPXP-EP PCI Express Endpoint Controller Core with SoC Bridge Extensions for AHB, AXI and Wishbone Implements a PCI Express endpoint controller that is compliant with PCI Express Base specification 1.1, including the Transaction, Data Link, and Physical protocol layers. It
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PCI AHB DMA
tsmc 0.18
axi bridge
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018U
Abstract: Nordic Semiconductor ADC Verilog Implementation TSMC 0.18Um
Text: PhysicalExpress H HA AN ND DO OFFFF A AN ND DM MA AN NU UFFA AC CTTU UR RIIN NG GS SE ER RV VIIC CE E What is PhysicalExpress? Through several years of experience with Handoff projects, Nordic Semiconductor is able to present customers with a well-proven methodology and a simple, streamlined interface. Combining this methodology with state-of-the-art EDA tools and silicon proven IP, we
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