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    TSM10N80CZ Price and Stock

    Taiwan Semiconductor TSM10N80CZ-C0G

    MOSFET N-CH 800V 9.5A TO220
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    DigiKey TSM10N80CZ-C0G Tube 4,000
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    Taiwan Semiconductor TSM10N80CZ C0G

    Transistor MOSFET N-CH 800V 9.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: TSM10N80CZ C0G)
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    Avnet Americas TSM10N80CZ C0G Tube 4,000
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    TME TSM10N80CZ C0G 1
    • 1 $5.3
    • 10 $4.76
    • 100 $3.78
    • 1000 $3.78
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    TSM10N80CZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM10N80CZ C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 9.5A TO220 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)


    Original     		PDF TSM10N80 O-220 ITO-220 50pcs TSM10N80CZ TSM10N80CI 900ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		PDF TSM10N80 O-220 ITO-220 TSM10N80

    Untitled

    Abstract: No abstract text available
    Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS


    Original     		PDF TSM10N80 O-220 ITO-220 TSM10N80