TSB125100 Search Results

TSB125100 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSB125100		PTC Technology	Power Transistor Chip, NPN		Scan	PDF

TSB125100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5609 transistor Abstract: TSB125100 Text: 4SE D • b l l S I S G DD DD SS 7 Q5b ■ PTC niCROSEIlI C O R P / P O W E R 7 - 33 - / ^ TSB125100 Power Transistor Chip, NPN 25 A, 1000 V, tf= 50 ns ■ Planar Epitaxial ■ Contact Metallization: I Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils	OCR Scan	PDF	TSB125100 300ps, 5609 transistor TSB125100
Untitled Abstract: No abstract text available Text: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag	OCR Scan	PDF	TSB125100 18x53 20x48

Catalog Datasheet

MFG & Type

PDF

Document Tags

5609 transistor

Abstract: TSB125100
Text: 4SE D • b l l S I S G DD DD SS 7 Q5b ■ PTC niCROSEIlI C O R P / P O W E R 7 - 33 - / ^ TSB125100 Power Transistor Chip, NPN 25 A, 1000 V, tf= 50 ns ■ Planar Epitaxial ■ Contact Metallization: I Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils

OCR Scan

PDF

TSB125100 300ps, 5609 transistor TSB125100

Untitled

Abstract: No abstract text available
Text: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag