trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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BF907
Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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BFQ73S
BFR96
AT41435-5
AT420S5
AT414S5
AT41435-3
AT41470
AT41410
NE9S203
NE9S20S
BF907
BF900
BF910
BF914
BF479S
Siemens
BF479T
NE56755
BF540
BFQ14
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TPV 3100
Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the
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AN1034/D
AN1034
TPV 3100
TPV-3100
trw rf semiconductors
tpv3100
transistor TPV 3100
motorola balun
trw rf
motorola balun an
TPM-4100 application note
motorola semiconductor RF CATALOG
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TPV 3100
Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must
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AN1034/D
AN1034
TPV 3100
TPM-4100 application note
transistor TPV 3100
trw rf
disadvantages of Magic tee
trw rf semiconductors
TPV-3100
TPV3100
108AN
zf transmission
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Untitled
Abstract: No abstract text available
Text: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • [email protected] www.hittite.com Hittite Microwave Corporation Proprietary 140-00036-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD15XX – High Speed, Low Power ADC Evaluation Kit
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CP110709
EKIT01-HMCAD15XX
Hittit-00
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MAF C22
Abstract: No abstract text available
Text: Hardware Users Guide 2 Elizabeth Drive • Chelmsford, MA 01824 978-250-3343 tel • 978-250-3373 fax • [email protected] www.hittite.com Hittite Microwave Corporation Proprietary 140-00039-00 CP110709 rev A Hardware Users Guide for EKIT01-HMCAD110X – High Speed, Low Power ADC Evaluation Kit
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CP110709
EKIT01-HMCAD110X
Hittit-00
MAF C22
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2N5596
Abstract: motorola AN1033 TRW MICROWAVE AN1033 8707 motorola transistor k 2723 Nippon capacitors
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1033/D SEMICONDUCTOR APPLICATION NOTE AN1033 Match Impedances in Microwave Amplifiers and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.
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AN1033/D
AN1033
2N5596
motorola AN1033
TRW MICROWAVE
AN1033
8707 motorola
transistor k 2723
Nippon capacitors
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2N5596
Abstract: motorola AN1033 trw RF POWER TRANSISTOR AN1033 stub tuner matching top octave generator Nippon capacitors
Text: Order this document by AN1033/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1033 MATCH IMPEDANCES IN MICROWAVE AMPLIFIERS and you’re on the way to successful solid-state designs. Here’s how to analyze input/output factors and to create a practical design.
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AN1033/D
AN1033
2N5596
motorola AN1033
trw RF POWER TRANSISTOR
AN1033
stub tuner matching
top octave generator
Nippon capacitors
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QUALCOMM MSM
Abstract: TA0003 10MHz 10dBm oscillator gilbert
Text: TA0003 TA0003 HBT Technology Adds Power to CDMA Chip Set Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major
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TA0003
RF9907
-45dB
10MHz
175MHz.
QUALCOMM MSM
TA0003
10MHz 10dBm oscillator
gilbert
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encoder switch
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MV1449 PRELIMINARY INFORMATION DS3164 2.2 MV1449 PCM HDB3 ENCODER/DECODER The MV1449, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will
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MV1449
DS3164
MV1449,
048Mbit
MV1449
448Mbit.
encoder switch
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TA0003
Abstract: interleaver QUALCOMM MSM 2
Text: TA0003 TA0003 HBT Technology Adds Power to CDMA Chip Set Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major
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TA0003
RF9908
TA0003
interleaver
QUALCOMM MSM 2
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Untitled
Abstract: No abstract text available
Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MV1449 PRELIMINARY INFORMATION
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MV1449
DS3164
MV1449,
048Mbit
MV1449
448Mbit.
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
Text: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie
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fl55G24
TRW2307
50j/F,
TRW2304
50fjF,
trw RF POWER TRANSISTOR
trw rf transistor
trw resistors
trw rf semiconductors
TRW MICROWAVE
TRW2307
TRW CAP
TRW2304
TRW 2003
transistor TRW
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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TRW2001
Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005
Text: M OTORCLA SC XSTRS/R F 12E D | t>Bt75Sll Ü0ÖÖ372 0 | T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.
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Bt75Sl
TRW2000
171eC
TRW2003
TRW2005
TRW2010
TRW2001
trw 2015
TRW2020
trw 2001
TRW201
TRW MICROWAVE
trw rf transistors
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TRW63601
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 12E D | b3b725M 0000451 T -'b 'b -V l T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW63601 The RF Line M ic ro w a v e P o w e r O s c illa to r T ra n s is to r MICROWAVE POWER OSCILLATOR TRANSISTOR . designed for use as power oscillators at frequencies to 3.5 GHz with guaranteed
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b3b725M
TRW63601
TRW63601
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TRW52602
Abstract: TRW 52602 TRW52102 52602 A 3121 IC trw rf transistors 1147 x motorola
Text: MOTOROL A SC XSTRS/R F 1EE D | b3b?aS4 GÜfl f lBTS 1 | T~ 3 V MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T RW 52102 Se rie s The RF Line Microwave Linear Power Transistors . designed primarily for wideband, large-signal output and driver amplifier stages in
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milstar
Abstract: Sage Laboratories Phase Shifters Raytheon Company GPS TPS-159 Harris microwave antenna MSR-21 rockwell gps Rotary Joints agena EF-111A
Text: Sage Laboratories.the “Reliability First” company Since 1955, we have devoted our resources to providing cus tomers with a broad spectrum of quality RF and microwave components from DC to 60 GHz. Recognized throughout the industry for quality and reliability, state of the art engineering,
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FED-STD-209
milstar
Sage Laboratories Phase Shifters
Raytheon Company GPS
TPS-159
Harris microwave antenna
MSR-21
rockwell gps
Rotary Joints
agena
EF-111A
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GP131
Abstract: 13F-1 MRW2015
Text: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to
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MRW2000
24GHz
GP131
13F-1
MRW2015
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TRW Microwave Detector
Abstract: TRW MICROWAVE
Text: APH239C K-Band Power HEMT Amplifier GaAs Telecom Products Features • RF frequency: 37 to 43 GHz • Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 16 dB • Built-in power detector Self-biased first stage • Unconditionally stable
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APH239C
APH239C
4730x1440
E2/5042,
9701455-S-J1
9701455-1018-SJ1
TRW Microwave Detector
TRW MICROWAVE
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HEMT Amplifier
Abstract: TRW MICROWAVE HEMT
Text: APH238C K-Band Power HEMT Amplifier _ GaAs Telecom Products Features • RF frequency: 23 to 32 GHz Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 14 dB • Unconditionally stable • Compact size
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APH238C
APH238C
3280X1670
E2/5042,
9701455-S-J1
HEMT Amplifier
TRW MICROWAVE
HEMT
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8542A
Abstract: MIL-SID-810
Text: M/A-COM’s Control Components Division has been a leading manufacturer of microwave components for nearly three decades. Our commitment to quality is evident in every product and service we provide. Our engineering staff enjoys worldwide recognition as leaders in
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TRW mmic
Abstract: SA043 Ceramic Resonator GHz OXB104C 9701455-S-J1 9G012
Text: OXB104C HBTVCO G aAs Telecom Products Features • RF tuning range; 17 to 20 GHz • Output power: 6 dBm • Self bias: 5V/102 mA • Phase noise: 109 dBc/Hz at 1 MHz offset Description and Applications 3601240.053.SA043 The OXB104C is a monolithic, HBT voltage-controlled oscillator designed for commercial digital
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OXB104C
V/102
SA043
OXB104C
9G01240
9701455-S-J1
TRW mmic
SA043
Ceramic Resonator GHz
9701455-S-J1
9G012
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