MC74HC02D
Abstract: atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE
Text: MOTOROLA Order this document by AN1607/D SEMICONDUCTOR APPLICATION NOTE AN1607 ITC122 Low Voltage Micro to Motor Interface By Bill Lucas and Warren Schultz A MOSFET power stage that is designed to run Brush or Brushless DC motors with input signals from an ASB124
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AN1607/D
AN1607
ITC122
ASB124
MC74HC02D
atop
mc34152 application notes motor control
MC78L05ACD
MOTOROLA brushless dc controller
12 Vdc brush motor driver
HALL SOT-23-4
motorola transistor cross reference
FET small signal transistors motorola
Z6 DIODE
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a26544
Abstract: PCB BOARD DIMENSION BY SMA CONNECT transistor c243 U300 ADS5421 ADS5422 J200 J201 J202 SN74x16244
Text: ADS5421/22EVM User’s Guide Literature Number: SBAU084 February 2003 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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ADS5421/22EVM
SBAU084
21/ADS5422
FB200,
FB201
P10437CT
SN65LVDS101
SN74ALVCH16244
TSSOP-48
a26544
PCB BOARD DIMENSION BY SMA CONNECT
transistor c243
U300
ADS5421
ADS5422
J200
J201
J202
SN74x16244
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diode zener 7.2v
Abstract: DB-54008L-830
Text: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%
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DB-54008L-830
PD54008L
830MHz
DB-54008L-830
diode zener 7.2v
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Untitled
Abstract: No abstract text available
Text: DB-54008L-175 RF POWER Amplifier using 1 x PD54008L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.2V ■ Output Power: 8W ■ Power Gain: 16.2 ± 1.7dB ■ Efficiency: 56% - 57%
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DB-54008L-175
PD54008L
DB-54008L-175
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165nH
Abstract: No abstract text available
Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%
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DB-54008L-470
PD54008L
470MHz
DB-54008L-470
165nH
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Si3216
Abstract: No abstract text available
Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid
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Si3216
GR-909
Si3216
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1206 package resistor,1k resistor
Abstract: philips smd 1206 resistor
Text: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE
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DB-55008L-175
PD55008L
DB-55008L-175
PD55008L
1206 package resistor,1k resistor
philips smd 1206 resistor
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dc-dc stepdown converter 12 to 5v 3a
Abstract: CM3708 CM3708IS CM3708IT PT16 dynamic ram cmos 16pin Schottky Diode 50V 3A
Text: CM3708 3A LOW-NOISE PWM STEP-DOWN REGULATOR GENERAL DESCRIPTION FEATURES The CM3708 is a low-noise, pulse-width-modulated PWM , DC-DC step-down converter. It powers logic and transmitters in small wireless systems such as cellular phones, communicating PDAs, and handy-terminals. The device
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CM3708
CM3708
600KHz
dc-dc stepdown converter 12 to 5v 3a
CM3708IS
CM3708IT
PT16
dynamic ram cmos 16pin
Schottky Diode 50V 3A
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Untitled
Abstract: No abstract text available
Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE
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DB-55008L-880
PD55008L
DB-55008L-880
PD55008L
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100B Zener
Abstract: No abstract text available
Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE
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DB-54003L-880
PD54003L
DB-54003L-880
PD54003L
100B Zener
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transistor c114 diagrams
Abstract: AFEDRI8201 TRANSISTOR c104 113-1-C-5 axial capacitor TFM-140-32-S c86 sot23 XCV100E6 C103 C104
Text: AFEDRI8201EVM Evaluation Module User’s Guide August 2005 High-Speed Communications SBAU099B IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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AFEDRI8201EVM
SBAU099B
5006K-ND
5007K-ND
TPS78633
TPS78618
XC18V01VQ44
XCV100E-6PQ240C
DLP-USB245M
DAC2902
transistor c114 diagrams
AFEDRI8201
TRANSISTOR c104
113-1-C-5
axial capacitor
TFM-140-32-S
c86 sot23
XCV100E6
C103
C104
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transistor c114 diagrams
Abstract: transistor c114 TFM-140-32-S-D-LC BNX002 c102 TRANSISTOR c86 sot23 pickering relay Pickering relays TRANSISTOR c104 transistor c114 diagram
Text: AFE8201EVM Evaluation Module User’s Guide July 2004 High-Speed Communications SBAU099 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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AFE8201EVM
SBAU099
5006K-ND
5007K-ND
TPS78633
TPS78618
XC18V01VQ44
XCV100E-6PQ240C
DLP-USB245M
DAC2902
transistor c114 diagrams
transistor c114
TFM-140-32-S-D-LC
BNX002
c102 TRANSISTOR
c86 sot23
pickering relay
Pickering relays
TRANSISTOR c104
transistor c114 diagram
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PCC2171
Abstract: No abstract text available
Text: TPA3005D2EVM 6ĆW Stereo ClassĆD Audio Power Amplifier User’s Guide May 2004 HPL − Audio Power Amplifiers SLOU165 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TPA3005D2EVM
SLOU165
Key/2163Sâ
2512067007Y3
3GEYJ124V
P120KGTRâ
PPBA25
P8086SCTâ
TPA3005D2PHP
PCC2171
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capacitor 47pf
Abstract: SMD Transistor w30
Text: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description
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DB-900-60W
PD57070S
DB-900-60W
IS-54/-136
IS-95
capacitor 47pf
SMD Transistor w30
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Untitled
Abstract: No abstract text available
Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features 100% programmable global solution Performs all BORSCHT functions DC-DC controller provides tracking battery from a 3.3–35V input Si3210
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Si3210)
90VPK
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grm426x7
Abstract: No abstract text available
Text: DB-55003L-512 RF POWER AMPLIFIER using 1x PD55003L-512 The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ FREQUENCY: 410 -512 MHz ■ SUPPLY VOLTAGE: 12.5V ■ OUTPUT POWER: > 3W ■ POWER GAIN: 15.8 +/-1.2dB ■ EFFICIENCY: 50% - 57% ■
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DB-55003L-512
PD55003L-512
DB-55003L-512
grm426x7
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3362P-503-ND
Abstract: 3362P TPA3003D2 TPA3003D2PFB UMK212F105ZG
Text: TPA3003D2EVM 3ĆW Stereo ClassĆD Audio Power Amplifier With DC Volume Control User’s Guide March 2003 HPL SLOU159 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TPA3003D2EVM
SLOU159
3362P-503-ND
3362P
TPA3003D2
TPA3003D2PFB
UMK212F105ZG
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LM317 SOT223
Abstract: R2512 resistor 9014 SMD Pioneer Reference C73 SMD lm317 1N4148DICT-ND 720K-ND TAS1020A how to reset 24lC04 fb0805
Text: TAS1020AEVM Evaluation Module for the TAS1020A User’s Guide July 2001 Digital Audio Products SLEU002 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TAS1020AEVM
TAS1020A
SLEU002
TAS1020AEVM
8401K
8401K
HNZ440
LM317 SOT223
R2512 resistor
9014 SMD
Pioneer Reference C73
SMD lm317
1N4148DICT-ND
720K-ND
TAS1020A
how to reset 24lC04
fb0805
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PD54003L
Abstract: No abstract text available
Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%
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DB-54003L-175A
PD54003L
175MHz
DB-54003L-175A
DB-54003-470
PD54003
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re2 elna
Abstract: 4315-SMD resistors 7805 5V REGULATOR IC THREE TERMINAL DALE CONNECTORS ASLG40G elna re2 m ND R315 brushless dc motor with regenerative function con PMA-A-R030-1 U104D
Text: ANALOG ICs 33395 EVALUATION MOTOR BOARD DESIGNER REFERENCE MANUAL MC33395RM Rev. 2 05/2003 ower EMBEDDED MOTION CONTROL Communicate Control Protect DRM33395 Designer Reference Manual 33395 Evaluation Motor Board 33395 Evaluation Motor Board List of Sections
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MC33395RM
DRM33395
DRM33395/D
re2 elna
4315-SMD resistors
7805 5V REGULATOR IC THREE TERMINAL
DALE CONNECTORS
ASLG40G
elna re2 m
ND R315
brushless dc motor with regenerative function con
PMA-A-R030-1
U104D
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MRF5711LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon H igh-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and iow-noise VCO's. Available in a surface-mountable plastic packages. This
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MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MRF571
MRF5711LT1
6-590-65/3B
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF652 MRF652S D e sig n e d fo r 12.5 V d c U H F la rg e -s ig n a l, a m p lifie r a p p lic a tio n s in in d u s tria l a nd c o m m e rc ia l FM e q u ip m e n t o p e ra tin g to 5 1 2 M H z.
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MRF652
MRF652S
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KA 2717
Abstract: MDC2125
Text: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to
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MDC2125/D
MDC2125
738B-01
738B-02
738B-02
KA 2717
MDC2125
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LB 11911
Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA
Text: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er |3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors
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2N6467,
2N6468
T0-213AA
RCA-2N6467
2N6468Aare
O-213AA
TA8710,
TA8709,
LB 11911
1SS99
TA8709
ta8710
C984
Z-636
2N6467
2N6468
T0-213AA
TO213AA
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