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    TRANSISTORS C 2216 Search Results

    TRANSISTORS C 2216 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS C 2216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    transistors c 2216

    Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


    Original     		PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 transistors c 2216 UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215

    221D

    Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor


    Original     		PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 10nductor 221D 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217

    221D

    Abstract: UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor


    Original     		PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 221D UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218

    028A5

    Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF

    2SC736

    Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726

    PNP transistor A705

    Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L PNP transistor A705 2N1620 2sc768 2N1619 UD3008 BD264 MHT6414 SOT1156 MHT6311

    BD264A

    Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF

    80 amp 30v npn darlington

    Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 80 amp 30v npn darlington UD3008 transistor 2sc115 bd107a A515 B3570 B3571 BD106 HFE-10

    Untitled

    Abstract: No abstract text available
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    3sk fet

    Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
    Text: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM


    OCR Scan     		PDF 362TM 383TM 2SC388ATM 400MIN 2SC4317 2SC4322 3sk fet transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type

    ca3725

    Abstract: 2N6738 2N6740
    Text: 2N6738. 2N6739. 2N6740 H A RR IS SEPIICON] S E C T O R 1291 M3Ü E S7 1 QG4Gb3fl 414 H H A S File Number SbE D 5-A S w i t c h M a j f Power Transistors •^ 3 5 - / 9 TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage


    OCR Scan     		PDF 2N6738. 2N6739. 2N6740 92CS-39969 TQ-220AB 2N6738, 2N6739, 2N6740* ca3725 2N6738

    MC4049

    Abstract: mrf536 MRF534 MM4049 hfe 4049 MMC4049 case 317-01
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM4049 MMC4049 MRF534 MRF536 The RF Line PNP SILICON HIGH-FREQUENCY TRANSISTORS . . . d e s ig n e d f o r u s e a s a h ig h - f r e q u e n c y c u r r e n t m o d e s w itc h . B e c a u s e o f th e e x tr e m e ly


    OCR Scan     		PDF MM4049 MMC4049 MRF534 MRF536 RF534 RF536 MC4049 mrf536 hfe 4049 case 317-01

    2865002402

    Abstract: 6435 fet MRF136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.


    OCR Scan     		PDF RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet

    N2114

    Abstract: marking som 6pin N2213 AE 3PIN ZD43
    Text: S -5 b 7 § ^ 6 ÎS Ÿ / > i / z —V S Mini Type (6-pin) Package Outline * Transistors 0.425 mn m ID tO 1 O un CD 2 O L— Œ 3 S S ^ S ! ( 6 Ä i- ) A - y ^ - v li. S t# W S Í- M ( 3 ^ ) ¿ |5 li;/N " 7 X T 'h 7 > v 'X Í2 • f t ,1.25±0 1 • 4 ' ¿ " * f J& U / c K r f f i H ^


    OCR Scan     		PDF

    IRFF9131

    Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
    Text: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d


    OCR Scan     		PDF IRFF9130, IRFF9131 IRFF9132, IRFF9133 -100V 92CS-43296 IRFF9131, IRFF9132 IRFF9133 IRFF9130 transistors c 2216

    22-16l

    Abstract: UN2211LT1 UN2212LT1 2216L N2233LT1 22-16lT A8K resistor 2231LT1 transistor A8E UN2214LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		PDF OT-23 MMUN2211LT1 22-16l UN2211LT1 UN2212LT1 2216L N2233LT1 22-16lT A8K resistor 2231LT1 transistor A8E UN2214LT1

    motorola transistor 7439

    Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 motorola transistor 7439 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip

    22-16lT

    Abstract: 22-16l 2232LT1 n221 2214LT1 transistor SOT23 ash
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF ircuiMMUN2214LT1 MMUN2211LT1 22-16lT 22-16l 2232LT1 n221 2214LT1 transistor SOT23 ash

    transistors c 2216

    Abstract: No abstract text available
    Text: M A X IM U M R A T IN G S Symbol MPQ3798 MPQ3799 Unit C o llector-E m itter Voltage VCEO -4 0 -6 0 Vdc Collector-Base Voltage VCBO - 60 Vdc Em itter-Base Voltage vebo - 5.0 Vdc Rating C ollector C urrent — Continuous Total Device Dissipation in Ta - 25CC|1


    OCR Scan     		PDF MPQ3798 MPQ3799 MPQ3799* O-116 MPQ3799 transistors c 2216

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMUN2211LT1/D SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SER IES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    OCR Scan     		PDF MMUN2211LT1/D MMUN2211LT1 OT-23 OT-23 O-236AB)

    2SK608

    Abstract: D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238
    Text: Mini Type 3-pin Package ì~ m (3 Transistors, Diodes • $ i m 5 - ä Ü ( 3 ä * :f - ) A - y ' i r - v l i . 7 ^ - v T \ / * y 4- - • jJ W t t i ;:* * * 8 mmx - 'J 'ä a S iÄ S W ^ 'J * - fc « 2 H Ô U 4 f f i H R • U nit ! aim V T t K ^ trÆ > h S të Ü


    OCR Scan     		PDF A721W MA3000- 2SK608 D717Y 2SC4894 2sk1216 C3967 2SC3967 2sk316 MA151WK 2sk123 2sc4238

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P

    SFC2741

    Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
    Text: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­


    OCR Scan     		PDF ULN-2054A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E