S229
Abstract: MMBF5484LT1 S129 S219 jfet transistor s129 equivalent tf5r
Text: MOTOROU SEMICONDUCTOR TECHNICAL Order this documsnt by MMBF5484LT11D DATA JFET Transistor — N-Channel MMBF5484LTI 2 SOURCE I 3 GATE a Tc = 25°C Linear Derating Factor Storage Channel Temperature THERMAL Range .$T2:%:Q$ .,\:.\ ‘:Y?< , ,>< ., Tstg -65 to +150
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MMBF5484LT11D
MMBF5484LTI
MMBF5484LT1
S229
MMBF5484LT1
S129
S219
jfet transistor
s129 equivalent
tf5r
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H
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2SC1967
2SC1967
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k6z transistor
Abstract: MMBF170 iGSS 100nA Vgs 0v
Text: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40
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MMBF170
OT-23,
MIL-STD-202,
OT-23
DS30104
MMBF170
k6z transistor
iGSS 100nA Vgs 0v
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2SA490
Abstract: TRANSISTOR 3hm 2SC790 AC75
Text: 490 2SA o ^ U 3 y p N P x ^ 5> ^ j> ì\ y ^ m ^ _ SILICON PNP EPITAXIAL MESA 03.6±g2 Power Amplifier Applications 2 S C 7 9 0 <D 3 > h ì - fì TRANSISTOR Unit in mm ntitiàmm o h ^ y ^ x 5> o n 7 9 / y * 'J T I ti J ] 1 0 W ? 7 x . ry/tcsatto Complementary to 2 S C 7 9 0
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OCR Scan
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90O3i
2SC790
320AB
2-10A1A
2sa490
2SA490
TRANSISTOR 3hm
AC75
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KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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OCR Scan
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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1mbh
Abstract: YR39 D2050
Text: 1MBH70D-090A IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR SiQ3 : Features • ¡S B U M V y-i''?' • High Speed Sw itching Low Saturation Voltage • A X'h'f— hS i/t M O S -y—MHia #/jv§)y'C.y^— Small Package High Impedance Gate Gate
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OCR Scan
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1MBH70D-090A
50/iS)
BH70D-090A
1mbh
YR39
D2050
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FZ 300 R 06 KL
Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Text: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O
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uPA1603
FZ 300 R 06 KL
PA1603
Transistor NP 3773
TRANSISTOR PHL 641
PA1603CX
L0734
IS352
l 0734
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2SC2958
Abstract: transistor AE 2SC2959 2SA1221 F0246
Text: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >
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OCR Scan
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2SC2958
2SC2959
2SA1221,
A1222
A1221/2SC2958
---2SA1222/2SC2959
2SC2958
transistor AE
2SC2959
2SA1221
F0246
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2SB810
Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Text: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o
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2SB810
O2SD1020ta
d11736jj4v0ds00
JIS211
2SB810
JIS211
transistor C982
C382
n1j 048
ic 6116
IC 7824 ST
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PDF
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AF02
Abstract: 2SJ198 2SK1484 K0852
Text: -y 5 7 • h ~ mos M O S Field Effect Transistor 2 P x 4 J 1 9 8 MOS F E T 2SJ198 a P f- ^ * M m MOS F E T T, 5 V iz j: § S IC mm -y f- > r m ^ - v t o *M O S FET l i t 5.2 MAX. <, X >f y f- > 7 ? f- ^ - ? ^ i K > D C - D C X ' f «y f - i - ^ i S T " i “ o
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OCR Scan
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2SJ198
2SJ198
2SK1484
IEI-620)
AF02
K0852
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PDF
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marking M63
Abstract: marking K50 transistor
Text: T I • I SI NEC Ar 7 lÏ T A \ f Compound Transistor A GN1L4Z M pnp ^ 4# j u M '> y =i > » o/<>f r x i Ê S t è Ri = 4 7 kû (Ta -2 5 nn *Ê *fft*5 È :fê 9 9 i = ^ u 9 9 ? v 9 9 B& V -y ÿ f S i W ± V CEO - 5 0 V V ebo - V :< H ) ili \ 9 {£ ~y 3c
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PWS10
Cycled50
marking M63
marking K50 transistor
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transistor sb 772
Abstract: TRANSISTOR D 1853 ACS 086 SK FN 521 512 CJ3 2SK1853 pj 0266 SB 772 KSB 772 SF94
Text: s— S 5 • S ''— NEC h* MOS MOS F E T M O S Field Effect Power Transistor 2SK1853 N + s< n— X >T M O S F E T y ^ I t i 2 S K 1853 ¿ ,N > 5v F E T T", h 0 ^ °7 - £ W H ] M O S (^ - fi i mm i c co a 1.* (3 j: ^ y" r " ' <A X T'-to ix ^ y f > i i :* > m % T",
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2SK1853
transistor sb 772
TRANSISTOR D 1853
ACS 086
SK FN 521
512 CJ3
2SK1853
pj 0266
SB 772
KSB 772
SF94
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transistor marking s72
Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW
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2N7002
OT-23,
MIL-STD-202,
OT-23
DS11303
2N7002
transistor marking s72
transistor s72
k72 transistor
702 TRANSISTOR sot-23
s72 sot 23
k72 transistor sot 23
S72 2n7002
S72 transistor
marking 702
2n7002 702
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power
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OCR Scan
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BUK100-50GL
Q03034S
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PDF
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2SB1318
Abstract: BH rn transistor 3Fp transistor
Text: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh
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2SB1318
-100n
2SB1318
BH rn transistor
3Fp transistor
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NDS9942
Abstract: p channel mosfet
Text: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9942
SD1130
NDS9942
p channel mosfet
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sf 128 transistor
Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
Text: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®
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OCR Scan
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2SK2159
2SK2159it
sf 128 transistor
2SK2159
TRANSISTOR SF 128
6GDG
TC-7989A
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PDF
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2SK150
Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Text: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/
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OCR Scan
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2SK15)
2SK11)
2SK12,
3800iiu
3800/tU
2SK12
3SK15
2SK12)
10kfl)
2SK150
2SK12
2SK15
transistor 2sk
2SK120
2SK11
2SK12-Y
2SK150 A
2SK110
SK 10 BAT 065
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2SD103
Abstract: transistor mp IC marking jw
Text: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES
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2SD1033
2SB768
I-1209}
2SD103
transistor mp
IC marking jw
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PDF
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR ARRAY <1 Q 2 TRIPLE NPN T K series DARLINGTON T R A N S IS T O R A R R A Y 4* F e a tu re s Ä • NPN 3 E S # « J£ • 8 > iOu -i > 7 ' \ > ,-z.y • * - K A' , Vz = 60±l0V • h P t = 2.5W • ¡S& jfcitlipp, min.1500 • Triple NPN darlington transistor array
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 9. 1597 International IOR Rectifier IRG4BC20S P R E L IM IN A R Y Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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OCR Scan
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IRG4BC20S
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: SA N Y O SEMICONDUCTOR lEE D " j 7 n 7 D 7 b CORP □□□5133 2SD1650 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output AppIications with Damper Diode 1748B Applications . High-voltage, power switching Features . Fast speed (tfmaxsO.ilus).
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OCR Scan
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2SD1650
1748B
IS-126
1S-126A
IS-20MA
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PDF
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b527
Abstract: tic 263a NDP506A
Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's
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NDP506A
NDP506B
NDB506A
NDB506B
bSD113D
b527
tic 263a
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PDF
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2SK992
Abstract: U71E 720-ES RXSU 4 T108 T460 332h tt 22
Text: MOS Field Effect Pow er Transistor 2SK992 MOS F E T j i m 2SK992 Ü , m FET f , 5 V ifiJ^ IC iotbi i i z i è H fë m ib W fiè & îïïim z a -y - f> < , * y v / ' f K, 7 X A "/ f - > r w t t t f ililT ft» x t- t. & £ £ > , t - IM S : mm 10.5 MAX.
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OCR Scan
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2SK992
26-Lfli06)
332-H
37-ffi
29-BlSfl
2SK992
U71E
720-ES
RXSU 4
T108
T460
332h
tt 22
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