TRANSISTOR VCE 900V Search Results

TRANSISTOR VCE 900V Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR VCE 900V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ir igbt 1200V 40A Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package	Original	PDF	IRGPS40B120U Super-247 20KHz Super-247TM 5M-1994. O-274AA ir igbt 1200V 40A igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
V23990-P569F Abstract: V23990-P569 tyco igbt module tyco igbt 1200V P569 V23990-P560-F Text: V23990-P56X-F target datasheets Maximum Ratings / Höchstzulässige Werte version 0404 Module type Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition VCE	Original	PDF	V23990-P56X-F thickness50um Dicke50um D-81359 V23990-P569F V23990-P569 tyco igbt module tyco igbt 1200V P569 V23990-P560-F
TS13003HV Abstract: TS13003HVCT 1.5A NPN power transistor TO-92 900V npn transistor Text: TS13003HV High Voltage NPN Transistor BVCEO = 530V BVCBO = 900V Ic = 1.5A VCE SAT , = 0.5V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. Part No. Packing TS13003HVCT B0 Bulk Pack TO-92	Original	PDF	TS13003HV TS13003HVCT 300uS, TS13003HV 1.5A NPN power transistor TO-92 900V npn transistor
transistor c257 Abstract: c259 C258 IRGPF30F Text: PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V	Original	PDF	IRGPF30F 10kHz) O-247AC C-260 transistor c257 c259 C258 IRGPF30F
IRGPF30F Abstract: transistor c257 C258 55A TO-247AC Text: PD - 9.1026 IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V	Original	PDF	IRGPF30F 10kHz) O-247AC C-260 IRGPF30F transistor c257 C258 55A TO-247AC
transistor c243 Abstract: transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V	Original	PDF	IRGBF30F 10kHz) O-220AB C-248 transistor c243 transistor c246 C 245 B C-247 C-248 D-12 IRGBF30F
transistor C238 Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V	Original	PDF	IRGBF20F 10kHz) O-220AB C-242 transistor C238 transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
c252 transistor Abstract: IRGPF20F Text: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V	Original	PDF	IRGPF20F 10kHz) O-247AC C-254 c252 transistor IRGPF20F
900v mosfet Abstract: IRGPF40F Text: PD - 9.770A IRGPF40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.3V	Original	PDF	IRGPF40F 10kHz) O-247AC C-266 900v mosfet IRGPF40F
IRGPF50F Abstract: No abstract text available Text: PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 2.7V	Original	PDF	IRGPF50F 10kHz) O-247AC C-272 IRGPF50F
transistor c245 Abstract: transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247 Text: PD - 9.773 IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.7V	Original	PDF	IRGBF30F 10kHz) O-220AB C-248 transistor c245 transistor c246 transistor c243 c245 transistor transistor c247 C243 transistor C247 c246 transistor IRGBF30F C-247
C-238 Abstract: D-12 IRGBF20F transistor c240 transistor C238 Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V	Original	PDF	IRGBF20F 10kHz) O-220AB C-242 C-238 D-12 IRGBF20F transistor c240 transistor C238
c252 transistor Abstract: IRGPF20F C249 Text: PD - 9.1025 IRGPF20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V	Original	PDF	IRGPF20F 10kHz) O-247AC C-254 c252 transistor IRGPF20F C249
IRGPF40F Abstract: No abstract text available Text: PD - 9.770A IRGPF40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 3.3V	Original	PDF	IRGPF40F 10kHz) O-247AC C-266 IRGPF40F

Untitled Abstract: No abstract text available Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.	Original	PDF	5899A IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A
Transistor A14 Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	PDF	TS13002HV TS13002HVCT Transistor A14
Untitled Abstract: No abstract text available Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type	Original	PDF	TS13003HV TS13003HVCT
1.5A NPN power transistor TO-92 Abstract: TS13003HV TS13003HVCT NPN transistor 900v Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	PDF	TS13003HV TS13003HVCT 1.5A NPN power transistor TO-92 TS13003HV NPN transistor 900v
NPN transistor 900v Abstract: No abstract text available Text: TS13003HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC=0.5A, IB=0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	PDF	TS13003HV TS13003HVCT NPN transistor 900v
Untitled Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	PDF	TS13002HV TS13002HVCT
1.5A NPN power transistor TO-92 Abstract: TS13003HV TS13003HVCT NPN transistor 900v 1.5A 900V TO-92 0.5A NPN power switching transistor TO-92 NPN Transistor 1A 800V to - 92 Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	PDF	TS13003HV TS13003HVCT 1.5A NPN power transistor TO-92 TS13003HV NPN transistor 900v 1.5A 900V TO-92 0.5A NPN power switching transistor TO-92 NPN Transistor 1A 800V to - 92
IRFPS37N50A Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.	Original	PDF	5899A IRGPS40B120UP Super-247 Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UP 312V marking code igbt 40a 600v
SE110N Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)	OCR Scan	PDF	2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
GT60M101 Abstract: No abstract text available Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0	OCR Scan	PDF	GT60M101 --15V GT60M101

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TRANSISTOR VCE 900V Search Results

TRANSISTOR VCE 900V Result Highlights (5)

TRANSISTOR VCE 900V Datasheets Context Search

ir igbt 1200V 40A

V23990-P569F

TS13003HV

transistor c257

IRGPF30F

transistor c243

transistor C238

c252 transistor

900v mosfet

IRGPF50F

transistor c245

C-238

c252 transistor

IRGPF40F

Untitled

Transistor A14

Untitled

1.5A NPN power transistor TO-92

NPN transistor 900v

Untitled

1.5A NPN power transistor TO-92

IRFPS37N50A

SE110N

GT60M101