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    TRANSISTOR TOSHIBA K4108 Search Results

    TRANSISTOR TOSHIBA K4108 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    toshiba k4108

    Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		PDF 2SK4108 toshiba k4108 K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410

    K4108

    Abstract: toshiba k4108 2SK4108 transistor k4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) z Low leakage current


    Original     		PDF 2SK4108 K4108 toshiba k4108 2SK4108 transistor k4108

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108