TRANSISTOR T3N Search Results

TRANSISTOR T3N Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR T3N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
MT29C4G48MAZAPAKQ-5 Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,	Original	168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package	PDF
MT29F4G08ABA Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96 Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,	Original	168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96	PDF
MT29C4G48MAZBBAKQ-48 IT Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96 Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)	Original	168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96	PDF
MT29F4G08ABA Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5 Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,	Original	168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP	PDF
MT29F4G08ABA Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08 Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,	Original	168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08	PDF
2SK2836 Abstract: No abstract text available Text: TO SH IBA 2SK2836 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2836 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance	OCR Scan	2SK2836 2SK2836	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 TV TUNER, VHF RF AM PLIFIER APPLICATION • Unit in mm Superior Cross Modulation Performance. • L o w R everse T ran sfe r Capacitanee • L o w N oise F ig u re : C rss —20fF Typ .	OCR Scan	3SK292 --20fF	PDF
pa 2030a Abstract: J1 3007-1 120C 2SC4365 IS211 2T transistor surface mount transistor et 454 I PT 0 0 7N 0 6 N Text: SANYO SEMI CONDUCTOR CORP 2 2E D • 7^70713 O ODb ö b l Û T-3N7 2SC4365 * 2018A 3007 Features • Low-voltage operation N P N Epitaxial Planar Silicon Transistor V/U M IX, OSC, Low-Voltage High-Frequency Amp Applications fT=3.0GHz typ V oe = 3V MAG=12dBtyp (VCE=3V,Ic=10mA)	OCR Scan	2SC4365 12dBtyp pa 2030a J1 3007-1 120C 2SC4365 IS211 2T transistor surface mount transistor et 454 I PT 0 0 7N 0 6 N	PDF
transistor schottky model spice Abstract: SPICE thyristor model 7 segment SPICE Device Model Text: V T ID E C IN C 3 D 11386151 O M lfllD VJ900 ANALOG MASTER CHIP FAMILY T .i/2 -2 1 USER'S G UIDE Release 2.0 CONTENTS 1. INTRO DUC TIO N 1.1 Preface. 3-5 1.2 Bipolar-CMOS Comparison. 3-5	OCR Scan	VJ900 VJ900 D0011L3 T-42-21 transistor schottky model spice SPICE thyristor model 7 segment SPICE Device Model	PDF
kt829a Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b Text: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB	OCR Scan		PDF
tc 144e Abstract: 144EK Text: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4	OCR Scan	2SC4082 2SC4818 2SC4063 2SC4617 2SD1664 2SD1768 2SD2098 2SC4672 2S02167 2SD2170 tc 144e 144EK	PDF
Untitled Abstract: No abstract text available Text: M A S S 'S H IN 2 0 0 H IN 2 1 3 th r u +5V Powered RS-232 Transmitters/Receivers with 0.1 Microfarad External Capacitors September 1995 Features Description • Meets All RS-232E and V.28 Specifications The H IN 200-H IN 213 family of RS-232 transmitters/receivers	OCR Scan	RS-232 RS-232E 200-H HIN201 HIN209) 120kbit/s HIN213) 00L3032	PDF

LG color tv Circuit Diagram schematics Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243 Text: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS	OCR Scan	MIL-M-38510 38510/MACH 3186J Z501201 Z012510 Z011510 D022110 D022130 D021110 D021130 LG color tv Circuit Diagram schematics texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243	PDF
hin213eca Abstract: HIN202E HIN203E HIN205E HIN206E HIN235E HIN241E HIN238 Text: HIN202E thru HIN241E S em iconductor Data Sheet December 1998 File Number 4315.3 Features +/-15kV, ESD-Protected, +5V Powered, RS-232 Transmitters/Receivers • High Speed ISDN C o m p a tib le . 230kbits/s • ESD Protection for RS-232 I/OPins to ±15kV IEC1000	OCR Scan	HIN202E HIN241E /-15kVt RS-232 HIN202E-HIN241E RS-232E 1-800-4-HARRIS hin213eca HIN203E HIN205E HIN206E HIN235E HIN241E HIN238	PDF
ZPD 5.1 ITT Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers	OCR Scan	F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode	PDF