transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M05
NESG2101M05-A
NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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transistor T1J
Abstract: T1J marking
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
NESG2101M05
transistor T1J
T1J marking
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nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
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NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
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transistor gl 1117
Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:
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NESG2101M05
OT-343
NESG2101M05
461e-12
9e-15
transistor gl 1117
NEC NESG2101M05
IC 7408
1GP20
NESG2101M05-T1
S21E
re 10019
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BF 3027
Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:
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NESG2101M05
OT-343
NESG2101M05
BF 3027
transistor T1J
NESG2101M05-T1-A
S21E
nec 2562
GA1060
14851
mje 2055
1GP20
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transistor T1J
Abstract: NEC 9319 bjt npn
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:
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NESG2101M05
OT-343
transistor T1J
NEC 9319
bjt npn
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
R09DS0036EJ0300
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
R09DS0036EJ0300
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zener n20
Abstract: NA2-N12-PN diode zener ZD 260 NA2-N12P fluorescent lamp starter 1W 12V ZENER DIODE zener diode n8 TRANSISTOR REPLACEMENT GUIDE Sunx na2n
Text: GENERAL PURPOSE & SLIM BODY AREA SENSOR NA2-N SERIES Conforming to EMC Directive Slim style for all your needs 13mm Maximum sensing height 540mm Slim body Applied for UL Recognition Flexible solutions for your on-site needs. High performance made easy. The NA2-N series offers incredibly high performance in a general purpose area sensor.
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540mm
140mm
zener n20
NA2-N12-PN
diode zener ZD 260
NA2-N12P
fluorescent lamp starter
1W 12V ZENER DIODE
zener diode n8
TRANSISTOR REPLACEMENT GUIDE
Sunx
na2n
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1032AR
Abstract: SOT-23 marking t1c ADM1032ARZ ADM1032 transistor T1J 2N3906 1032AR01 marking code 8 lead soic-n package analog devices
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
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ADM1032
ADM1032
2N3904/06)
ADM1032/D
1032AR
SOT-23 marking t1c
ADM1032ARZ
transistor T1J
2N3906
1032AR01
marking code 8 lead soic-n package analog devices
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SH-31R
Abstract: SH-33R SU-77 height sensor SH-32R su7p m204 timer synchro sensor SH-21 SH-72
Text: PHOTOELECTRIC SENSORS SU-7 SERIES SH SERIES MS-AJ Sensor Mounting Stand Amplifier-separated Slim Body Automatic Sensitivity Setting Photoelectric Sensor PM2 Micro PM Simple and Suitable for Compact Design CHX-SC2 SU-7/SH SS-A5 Sensor Checker Amplifier-separated Type
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SH-61R)
SUS304)
SH-72
SH-31R
SH-33R
SU-77
height sensor
SH-32R
su7p
m204 timer
synchro sensor
SH-21
SH-72
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1032AR
Abstract: 0250C SOT23 NPN marking 4d T1C MSOP-8 ADM1032
Text: ADM1032 +15C Remote and Local System Temperature Monitor The ADM1032 is a dual−channel digital thermometer and under/overtemperature alarm intended for use in PCs and thermal management systems. The device can measure the temperature of a remote thermal diode, which can be located on the processor die or can
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ADM1032
ADM1032
2N3904/06)
ADM1032/D
1032AR
0250C
SOT23 NPN marking 4d
T1C MSOP-8
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MP650
Abstract: No abstract text available
Text: TOSHIBA MP6501A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MP6 50 1A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are is Isolated from Case. 6 Darlington Transistor Built Into in 1 Package
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MP6501A
MP650
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cb 10 b 60 kd
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES O * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent hFE specified up to 10 Amps PARTMARKING DETAIL -
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OT223
FZT855
FZT955
FZT855
cb 10 b 60 kd
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D44R4
Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
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T0-220
D44R4
D44R2
D44R8
D44R1
D44R3
D44R7
D44R
D44R5
D44R6
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Untitled
Abstract: No abstract text available
Text: Na l i o n a l Semiconductor D ecem ber 1 996 PRELIMINARY N D S 8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8435A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3350/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3350 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u w f ™ SINGLE TMOS POWER MOSFET 30 VOLTS TMOS WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMSF3350/D
MMSF3350
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IH33
Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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TEA-1035
Abstract: TEA1035
Text: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible
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PA1576
itzPA1576
PA1576H
IEI-1209)
TEI-1202
MEI-1202
IEI-1207
TEA-1034
TEA-1035
TEA-1035
TEA1035
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLERS PS8602, PS8602L HIGH NOISE REDUCTION HIGH SPEED ANALOG OUTPUT TYPE 8 PIN PHOTOCOUPLER DESCRIPTION PS8602 and PS8602L is a 8-pin high speed photocoupler containing a GaAIAs LED on input side and a P-N photodiode and a high speed am plifier transistor on output side on one chip. PS8602 is in a plastic DIP Dual In-line
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PS8602,
PS8602L
PS8602
PS8602L
PS8602L-E3)
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2SK19
Abstract: 2SK19-BL transistor 2sk19 2SK19BL dj rm cr88 Q45P
Text: 19 2S K ^ IL JC O N N-CHANNEL JUNCTION FIE LD E F F E C T TRANSISTOR O PM = • •- +ffl o PM Tuner and VHP A m p lif ie r U n it A p p lic a tio n s . in MAX. Ops i¿=>v x 9 t s * ifiX t A 7J 4 y = 2 0dB T y p . (f« 1 0 0 M H z ) NP - 2dB (T y p .) ftn -
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100MHz)
f-100MHz)
100MHz
Q45pP
Ta-25C)
2SK19
ZSK19-Ã
K19-OR
2SK19-BL
transistor 2sk19
2SK19BL
dj rm
cr88
Q45P
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JTs smd diode
Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Text: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA
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1206G
JTs smd diode
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
smd transistor marking p3
12A p transistor smd
12A transistor smd
SMD TRANSISTOR 12a
smd transistor marking 1j
transistor smd sG
SMD TRANSISTOR MARKING P2
STTA1206D/DI/G
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ks52
Abstract: TNU 175 KS524505 A60e KS221K0510
Text: 729* £ ? i PUW EREX IN C ~ ^ D lF | T S T M b Z l OOODÖTS 5 Single Darlington T R A N S IS T O R M odules Dim A B C D E F G H J K L Inches 2.09 Max 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± .0 0 8 .216 Dia Millimeters 53 Max 36 22 5.5 3 5 7 9 8 43.3 ± .2
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KS52450510
ks52
TNU 175
KS524505
A60e
KS221K0510
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