Untitled
Abstract: No abstract text available
Text: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture
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2N458A
2N458A
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CA18CLF08NAM1
Abstract: CA18CLF08PAM1 CA18CLN12PA CA18CLN12PAM1 CA18CLF08PA CA18CLN12 NPN Transistor 1A metal switching CA18CLF08NA CA18CLN12NAM1 CA18CLN12NA
Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance 3-8 mm or 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP
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CA18CLN
CA18CLF08NAM1
CA18CLF08PAM1
CA18CLN12PA
CA18CLN12PAM1
CA18CLF08PA
CA18CLN12
NPN Transistor 1A metal switching
CA18CLF08NA
CA18CLN12NAM1
CA18CLN12NA
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NTE283
Abstract: npn 10a 800v
Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include
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NTE283
NTE283
npn 10a 800v
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CA18CLF08
Abstract: No abstract text available
Text: Proximity Sensors Capacitive LD E I H Thermoplastic Polyester Housing LES P I TR Type CA, M18, DC • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance 3-8 mm or 3-12 mm • Rated operational voltage: 10-40 VDC • Output: DC 200 mA, NPN or PNP
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CA18CL.
CA18CLF08
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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169800
Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)
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NE687
OT-143)
NE68718-T1
NE68719-T1
NE68730-T1
NE68733-T1
NE68739-T1
NE68739R-T1
169800
80500 TRANSISTOR
D 5036
cd 4599
4463 B
80500 bb
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Untitled
Abstract: No abstract text available
Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry
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NE944
NE94430
2SC4184
NE94430-T2
NE94433-T1B
24-Hour
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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Untitled
Abstract: No abstract text available
Text: BA 3128N B A 3128F Audio-switched operational amplifier 2 inputs, 1 output The BA3128N and BA3128F are operational amplifiers provided with an analog switch. This enables the gain of the amplifiers to be switched at the same time as the inputs to the amplifiers.
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3128N
3128F
BA3128N
BA3128F
BA3128N
BA3128N,
BA3128F
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TK15120
Abstract: TK15120M
Text: r& T O K O TK15120 TWO-CHANNEL MUTING IC FEATURES APPLICATIONS • Wide Operating Voltage ■ Audio Systems ■ Ground Muting Method ■ Audio Mixers ■ Large Signal Attenuation ■ Special Effects ■ Control of Large Signal Level ■ Musical Instruments
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TK15120
TK15120
TK15120Z
TK15120M
TK15120M
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M0C3022
Abstract: M0C3021 M0C3023 H22L BPW 56 photo H11FI H74AI H11M4 21ab H2482
Text: Quick-Reference Product Guide Selection Charts INFRARED EMITTERS TYPE NO. y & 54A S Ä j f # / 54 / JV V / jL & s /s s /^ s ^ 1 N 6 26 4 1N 6 26 S 1 N6266 CQ X 1 4 CQ X1 5 CQX16 CQ X1 7 FSD1 FSD 2 FSD3 F5E1 FSE2 F5E3 F5F1 F5G1 IE D 5 5 C L ED S5 B LED56 L ED SSC F
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N6266
CQX16
LED56
LED56F
H23A1
H23A2
H23B1
H23L1
M0C3022
M0C3021
M0C3023
H22L
BPW 56 photo
H11FI
H74AI
H11M4
21ab
H2482
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Halbleiterbauelemente DDR
Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
Text: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK
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Untitled
Abstract: No abstract text available
Text: omRon EE-SPY311/411/312/412 Accurately Detects Objects Placed in Front of Mirror-like Background • A mirror-like background can be used as long as the distance between the sensor and the background is 20 mm or more ■ Detects an object as small as a 0.05-mm-dia.
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EE-SPY311/411/312/412
05-mm-dia.
EE-2002
E-SPY311
E-SPY411
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Untitled
Abstract: No abstract text available
Text: h a r ® S E M I C O N D U C T O R C A 5 1 3 0 , C A 5 1 3 0 A M • 15MHz, BiMOS M icrop ro cessor O perational Am plifiers with M OSFET Input/CMOS Output November 1996 Features Description • M OSFET Input Stage C A 5 13 0A and C A 5 13 0 are integrated circu it opera tiona l
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15MHz,
CA5130,
CA5130A
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equivalent ic of ca 3130
Abstract: No abstract text available
Text: fH HARRIS Operational Amplifiers S E M I C O N D U C T O R RC A Gi CA3130A, CA31 30 I NTERSIL M ay 1 9 9 0 BiMOS Operational Amplifiers With M O S F E T In p u t/C M O S O utput F e a tu re s : A p p lic a tio n s : • MOSFET in p u t stage provides: very h ig h Z/ = 1.5 TCI 1.5 *
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CA3130A,
A3130
A3600E
equivalent ic of ca 3130
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TRANSISTOR nf 842
Abstract: D 843 Transistor transistor su 312
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:
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NE856
100mA
UPA801T
UPA801T
UPA801T-T1
24-Hour
TRANSISTOR nf 842
D 843 Transistor
transistor su 312
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Untitled
Abstract: No abstract text available
Text: s = 7 ^7# S G S - T H O M S O N Kl gKLiM(s iO(gS THD200FI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E 8 1 734 (N)
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THD200FI
ISOWATT218
THD200FI
ISOWATT218
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Untitled
Abstract: No abstract text available
Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor
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HFA3127/883
MIL-STD883
HFA3127/883
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BUH417
Abstract: No abstract text available
Text: f Z 7 Ä 7# S C S -T H O M S O N [ Ä i m i O T 9 i * S BUH417 CRT HORIZONTAL DEFLECTION HIGH VOLTAGE NPN FASTSWITCHING TRANSISTOR . HIGH BREAKDOWN VOLTAGE CAPABILITY • FULLY INSULATED PACKAGE FOR EASY MOUNTING . LOW SATURATION VOLTAGE . HIGH SWITCHING SPEED
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BUH417
BUH417
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Untitled
Abstract: No abstract text available
Text: C A 3126 H a r r is Ê S E M I C O N D U C T O R TV Chroma Processor N o vem b er 1996 Features Description • Phase Locked Subcarrier Regeneration Utilizes Sample-and-Hold Techniques T he H arris C A 3 12 6 is a m on olithic silicon integrated circu it d e sig ned for T V ch ro m a processing and is id ea lly suite d for
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CA3126
CA3126
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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4419 power ic
Abstract: EN4419 4419 stk733c STK733 RSL AH Chopper Regulator FET scrrr
Text: Ordering number : EN4419 Thick Film Hybrid IC STK733C No. 4419 SAXYO 24 V Output MOS Chopper Regulator Overview Package Dimensions The STK733C is a 24 V dedicated, single-output regulator equipped applied to a switching device and is equipped with a step-dow n chopper which em ploys a power metal oxide
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EN4419
STK733C
STK733C
4419 power ic
EN4419
4419
STK733
RSL AH
Chopper Regulator FET
scrrr
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Untitled
Abstract: No abstract text available
Text: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4
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KD221205HB
Amperes/1200
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AX407
Abstract: No abstract text available
Text: 19-4739; Rev 0:2/92 y i / i y j x i > i / i 1.2\±A M ax, Single/Dual, Single-Supply Op Amps _Features The MAX406/MAX407 are low-voltage, m icropower, pre cision op amps designed for battery-operated systems. They feature a 1|iA per amplifier quiescent current that is
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MAX406/MAX407
MAX406,
MAX406
500nV
AX406â
AX406/M
AX407
MAX406
MAX407
AX407
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